Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review
Energy Surface of Pit-Patterned Templates for Growth of Space-Arranged Arrays of Quantum Dots - Molecular Dynamics Calculations Using High-Efficiency Algorithms. / Novikov, P. L.; Dvurechenskii, A. V.; Pavsky, K. V.
2019 International Multi-Conference on Industrial Engineering and Modern Technologies, FarEastCon 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8934013 (2019 International Multi-Conference on Industrial Engineering and Modern Technologies, FarEastCon 2019).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review
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TY - GEN
T1 - Energy Surface of Pit-Patterned Templates for Growth of Space-Arranged Arrays of Quantum Dots - Molecular Dynamics Calculations Using High-Efficiency Algorithms
AU - Novikov, P. L.
AU - Dvurechenskii, A. V.
AU - Pavsky, K. V.
N1 - Publisher Copyright: © 2019 IEEE. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2019/10
Y1 - 2019/10
N2 - Using MD simulation the energy surface of pit-patterned Si substrate is obtained. The physical model is based on empirical Tersoff potential, which governs the dynamics of an atomistic crystal system including Si and Ge atoms. The pits at the surface of Si substrate assume the shape of inverted truncated pyramid. The analysis of the energy surface mapped by MD calculations shows that the dense space-arranged array of nanoislands with up to 4 nanoislands per pit may be grown by the deposition of Ge on Si pit-patterned substrate. The calculations were carried using algorithm of parallel programming. The scheme of the parallel algorithm for Verlet neighbor list formation is suggested. The results of calculations using parallel algorithm are presented in form of the speedup depending on the cores number.
AB - Using MD simulation the energy surface of pit-patterned Si substrate is obtained. The physical model is based on empirical Tersoff potential, which governs the dynamics of an atomistic crystal system including Si and Ge atoms. The pits at the surface of Si substrate assume the shape of inverted truncated pyramid. The analysis of the energy surface mapped by MD calculations shows that the dense space-arranged array of nanoislands with up to 4 nanoislands per pit may be grown by the deposition of Ge on Si pit-patterned substrate. The calculations were carried using algorithm of parallel programming. The scheme of the parallel algorithm for Verlet neighbor list formation is suggested. The results of calculations using parallel algorithm are presented in form of the speedup depending on the cores number.
KW - high-efficiency algorithms
KW - molecular dynamics
KW - prepatterned substrates
KW - space-arranged arrays of quantum dots
UR - http://www.scopus.com/inward/record.url?scp=85078058008&partnerID=8YFLogxK
U2 - 10.1109/FarEastCon.2019.8934013
DO - 10.1109/FarEastCon.2019.8934013
M3 - Conference contribution
T3 - 2019 International Multi-Conference on Industrial Engineering and Modern Technologies, FarEastCon 2019
BT - 2019 International Multi-Conference on Industrial Engineering and Modern Technologies, FarEastCon 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2019 International Multi-Conference on Industrial Engineering and Modern Technologies, FarEastCon 2019
Y2 - 1 October 2019 through 4 October 2019
ER -
ID: 23261238