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Energy structure and radiative lifetimes of InxGa1-xN/AlN quantum dots. / Aleksandrov, Ivan A.; Zhuravlev, Konstantin S.

In: Superlattices and Microstructures, Vol. 113, 01.2018, p. 373-378.

Research output: Contribution to journal › Article › peer-review

Harvard

Aleksandrov, IA & Zhuravlev, KS 2018, 'Energy structure and radiative lifetimes of InxGa1-xN/AlN quantum dots', Superlattices and Microstructures, vol. 113, pp. 373-378. https://doi.org/10.1016/j.spmi.2017.11.015

APA

Aleksandrov, I. A., & Zhuravlev, K. S. (2018). Energy structure and radiative lifetimes of InxGa1-xN/AlN quantum dots. Superlattices and Microstructures, 113, 373-378. https://doi.org/10.1016/j.spmi.2017.11.015

Vancouver

Aleksandrov IA, Zhuravlev KS. Energy structure and radiative lifetimes of InxGa1-xN/AlN quantum dots. Superlattices and Microstructures. 2018 Jan;113:373-378. doi: 10.1016/j.spmi.2017.11.015

Author

Aleksandrov, Ivan A. ; Zhuravlev, Konstantin S. / Energy structure and radiative lifetimes of InxGa1-xN/AlN quantum dots. In: Superlattices and Microstructures. 2018 ; Vol. 113. pp. 373-378.

BibTeX

@article{ce466674be4a4821a2760faea0cc89b7,
title = "Energy structure and radiative lifetimes of InxGa1-xN/AlN quantum dots",
abstract = "We report calculations of the ground state transition energies and the radiative lifetimes in InxGa1-xN/AlN quantum dots with different size and indium content. The ground state transition energy and the radiative lifetime of the InxGa1-xN/AlN quantum dots can be varied over a wide range by changing the height of the quantum dot and the indium content. The sizes and compositions for quantum dots emitting in the wavelength range for fiber-optic telecommunications have been found. The radiative lifetime of the InxGa1-xN/AlN quantum dots increases with increase in quantum dot height at a constant indium content, and increases with increase in indium content at constant quantum dot height. For quantum dots with constant ground state transition energy the radiative lifetime decreases with increase in indium content.",
keywords = "AlN, Energy structure, InGaN, Quantum dots, Radiative lifetime, EXCITONS",
author = "Aleksandrov, {Ivan A.} and Zhuravlev, {Konstantin S.}",
year = "2018",
month = jan,
doi = "10.1016/j.spmi.2017.11.015",
language = "English",
volume = "113",
pages = "373--378",
journal = "Superlattices and Microstructures",
issn = "0749-6036",
publisher = "Academic Press Inc.",

}

RIS

TY - JOUR

T1 - Energy structure and radiative lifetimes of InxGa1-xN/AlN quantum dots

AU - Aleksandrov, Ivan A.

AU - Zhuravlev, Konstantin S.

PY - 2018/1

Y1 - 2018/1

N2 - We report calculations of the ground state transition energies and the radiative lifetimes in InxGa1-xN/AlN quantum dots with different size and indium content. The ground state transition energy and the radiative lifetime of the InxGa1-xN/AlN quantum dots can be varied over a wide range by changing the height of the quantum dot and the indium content. The sizes and compositions for quantum dots emitting in the wavelength range for fiber-optic telecommunications have been found. The radiative lifetime of the InxGa1-xN/AlN quantum dots increases with increase in quantum dot height at a constant indium content, and increases with increase in indium content at constant quantum dot height. For quantum dots with constant ground state transition energy the radiative lifetime decreases with increase in indium content.

AB - We report calculations of the ground state transition energies and the radiative lifetimes in InxGa1-xN/AlN quantum dots with different size and indium content. The ground state transition energy and the radiative lifetime of the InxGa1-xN/AlN quantum dots can be varied over a wide range by changing the height of the quantum dot and the indium content. The sizes and compositions for quantum dots emitting in the wavelength range for fiber-optic telecommunications have been found. The radiative lifetime of the InxGa1-xN/AlN quantum dots increases with increase in quantum dot height at a constant indium content, and increases with increase in indium content at constant quantum dot height. For quantum dots with constant ground state transition energy the radiative lifetime decreases with increase in indium content.

KW - AlN

KW - Energy structure

KW - InGaN

KW - Quantum dots

KW - Radiative lifetime

KW - EXCITONS

UR - http://www.scopus.com/inward/record.url?scp=85034079295&partnerID=8YFLogxK

U2 - 10.1016/j.spmi.2017.11.015

DO - 10.1016/j.spmi.2017.11.015

M3 - Article

AN - SCOPUS:85034079295

VL - 113

SP - 373

EP - 378

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

SN - 0749-6036

ER -

ID: 9562164