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Electronic correlation determining correlated plasmons in Sb-doped B i2 S e3. / Das, P. K.; Whitcher, T. J.; Yang, M. et al.

In: Physical Review B, Vol. 100, No. 11, 115109, 04.09.2019.

Research output: Contribution to journalArticlepeer-review

Harvard

Das, PK, Whitcher, TJ, Yang, M, Chi, X, Feng, YP, Lin, W, Chen, JS, Vobornik, I, Fujii, J, Kokh, KA, Tereshchenko, OE, Diao, CZ, Moon, J, Oh, S, Castro-Neto, AH, Breese, MBH, Wee, ATS & Rusydi, A 2019, 'Electronic correlation determining correlated plasmons in Sb-doped B i2 S e3', Physical Review B, vol. 100, no. 11, 115109. https://doi.org/10.1103/PhysRevB.100.115109

APA

Das, P. K., Whitcher, T. J., Yang, M., Chi, X., Feng, Y. P., Lin, W., Chen, J. S., Vobornik, I., Fujii, J., Kokh, K. A., Tereshchenko, O. E., Diao, C. Z., Moon, J., Oh, S., Castro-Neto, A. H., Breese, M. B. H., Wee, A. T. S., & Rusydi, A. (2019). Electronic correlation determining correlated plasmons in Sb-doped B i2 S e3. Physical Review B, 100(11), [115109]. https://doi.org/10.1103/PhysRevB.100.115109

Vancouver

Das PK, Whitcher TJ, Yang M, Chi X, Feng YP, Lin W et al. Electronic correlation determining correlated plasmons in Sb-doped B i2 S e3. Physical Review B. 2019 Sept 4;100(11):115109. doi: 10.1103/PhysRevB.100.115109

Author

Das, P. K. ; Whitcher, T. J. ; Yang, M. et al. / Electronic correlation determining correlated plasmons in Sb-doped B i2 S e3. In: Physical Review B. 2019 ; Vol. 100, No. 11.

BibTeX

@article{d2975327ea284ac4bf5eadb1df947573,
title = "Electronic correlation determining correlated plasmons in Sb-doped B i2 S e3",
abstract = "Electronic correlation is believed to play an important role in exotic phenomena such as insulator-metal transition, colossal magnetoresistance, and higherature superconductivity in correlated electron systems. Recently, it has been shown that electronic correlation may also be responsible for the formation of unconventional plasmons. Herewith, using a combination of angle-dependent spectroscopic ellipsometry, angle resolved photoemission spectroscopy, and Hall measurements, all as a function of temperature supported by first-principles calculations, the existence of low-loss high-energy correlated plasmons accompanied by spectral weight transfer, a fingerprint of electronic correlation, in topological insulator (Bi0.8Sb0.2)2Se3 is revealed. Upon cooling, the density of free charge carriers in the surface states decreases whereas that in the bulk states increases, and the recently reported correlated plasmons are key to explaining this phenomenon. Our result shows the importance of electronic correlation in determining correlated plasmons and opens an alternative path in engineering plasmonic-based topologically insulating devices.",
keywords = "ELECTROMAGNETIC ENERGY-TRANSPORT, TOPOLOGICAL INSULATOR BI2SE3, INITIO MOLECULAR-DYNAMICS, TRANSITION, GRAPHENE, BI2TE3, BITECL, WAVES, STATE, LIMIT",
author = "Das, {P. K.} and Whitcher, {T. J.} and M. Yang and X. Chi and Feng, {Y. P.} and W. Lin and Chen, {J. S.} and I. Vobornik and J. Fujii and Kokh, {K. A.} and Tereshchenko, {O. E.} and Diao, {C. Z.} and Jisoo Moon and Seongshik Oh and Castro-Neto, {A. H.} and Breese, {M. B.H.} and Wee, {A. T.S.} and A. Rusydi",
note = "Publisher Copyright: {\textcopyright} 2019 American Physical Society.",
year = "2019",
month = sep,
day = "4",
doi = "10.1103/PhysRevB.100.115109",
language = "English",
volume = "100",
journal = "Physical Review B",
issn = "2469-9950",
publisher = "American Physical Society",
number = "11",

}

RIS

TY - JOUR

T1 - Electronic correlation determining correlated plasmons in Sb-doped B i2 S e3

AU - Das, P. K.

AU - Whitcher, T. J.

AU - Yang, M.

AU - Chi, X.

AU - Feng, Y. P.

AU - Lin, W.

AU - Chen, J. S.

AU - Vobornik, I.

AU - Fujii, J.

AU - Kokh, K. A.

AU - Tereshchenko, O. E.

AU - Diao, C. Z.

AU - Moon, Jisoo

AU - Oh, Seongshik

AU - Castro-Neto, A. H.

AU - Breese, M. B.H.

AU - Wee, A. T.S.

AU - Rusydi, A.

N1 - Publisher Copyright: © 2019 American Physical Society.

PY - 2019/9/4

Y1 - 2019/9/4

N2 - Electronic correlation is believed to play an important role in exotic phenomena such as insulator-metal transition, colossal magnetoresistance, and higherature superconductivity in correlated electron systems. Recently, it has been shown that electronic correlation may also be responsible for the formation of unconventional plasmons. Herewith, using a combination of angle-dependent spectroscopic ellipsometry, angle resolved photoemission spectroscopy, and Hall measurements, all as a function of temperature supported by first-principles calculations, the existence of low-loss high-energy correlated plasmons accompanied by spectral weight transfer, a fingerprint of electronic correlation, in topological insulator (Bi0.8Sb0.2)2Se3 is revealed. Upon cooling, the density of free charge carriers in the surface states decreases whereas that in the bulk states increases, and the recently reported correlated plasmons are key to explaining this phenomenon. Our result shows the importance of electronic correlation in determining correlated plasmons and opens an alternative path in engineering plasmonic-based topologically insulating devices.

AB - Electronic correlation is believed to play an important role in exotic phenomena such as insulator-metal transition, colossal magnetoresistance, and higherature superconductivity in correlated electron systems. Recently, it has been shown that electronic correlation may also be responsible for the formation of unconventional plasmons. Herewith, using a combination of angle-dependent spectroscopic ellipsometry, angle resolved photoemission spectroscopy, and Hall measurements, all as a function of temperature supported by first-principles calculations, the existence of low-loss high-energy correlated plasmons accompanied by spectral weight transfer, a fingerprint of electronic correlation, in topological insulator (Bi0.8Sb0.2)2Se3 is revealed. Upon cooling, the density of free charge carriers in the surface states decreases whereas that in the bulk states increases, and the recently reported correlated plasmons are key to explaining this phenomenon. Our result shows the importance of electronic correlation in determining correlated plasmons and opens an alternative path in engineering plasmonic-based topologically insulating devices.

KW - ELECTROMAGNETIC ENERGY-TRANSPORT

KW - TOPOLOGICAL INSULATOR BI2SE3

KW - INITIO MOLECULAR-DYNAMICS

KW - TRANSITION

KW - GRAPHENE

KW - BI2TE3

KW - BITECL

KW - WAVES

KW - STATE

KW - LIMIT

UR - http://www.scopus.com/inward/record.url?scp=85072586216&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.100.115109

DO - 10.1103/PhysRevB.100.115109

M3 - Article

AN - SCOPUS:85072586216

VL - 100

JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

IS - 11

M1 - 115109

ER -

ID: 21612604