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Electron emission from Cs/GaAs and GaAs(Cs, О) with positive and negative electron affinity. / Zhuravlev, A. G.; Khoroshilov, V. S.; Alperovich, V. L.

In: JETP Letters, Vol. 105, No. 10, 01.05.2017, p. 686-690.

Research output: Contribution to journal › Article › peer-review

Harvard

Zhuravlev, AG, Khoroshilov, VS & Alperovich, VL 2017, 'Electron emission from Cs/GaAs and GaAs(Cs, О) with positive and negative electron affinity', JETP Letters, vol. 105, no. 10, pp. 686-690. https://doi.org/10.1134/S0021364017100149

APA

Zhuravlev, A. G., Khoroshilov, V. S., & Alperovich, V. L. (2017). Electron emission from Cs/GaAs and GaAs(Cs, О) with positive and negative electron affinity. JETP Letters, 105(10), 686-690. https://doi.org/10.1134/S0021364017100149

Vancouver

Zhuravlev AG, Khoroshilov VS, Alperovich VL. Electron emission from Cs/GaAs and GaAs(Cs, О) with positive and negative electron affinity. JETP Letters. 2017 May 1;105(10):686-690. doi: 10.1134/S0021364017100149

Author

Zhuravlev, A. G. ; Khoroshilov, V. S. ; Alperovich, V. L. / Electron emission from Cs/GaAs and GaAs(Cs, О) with positive and negative electron affinity. In: JETP Letters. 2017 ; Vol. 105, No. 10. pp. 686-690.

BibTeX

@article{ee153d4a501842d6a81e48415307a49a,
title = "Electron emission from Cs/GaAs and GaAs(Cs, О) with positive and negative electron affinity",
abstract = "The evolution of probabilities of escape of hot and thermalized electrons from GaAs(001) with adsorbed cesium and oxygen layers to vacuum at the transition from positive to negative effective electron affinity is studied by the photoemission quantum yield spectroscopy. A minimum of the probability of escape of thermalized electrons near zero electron affinity is revealed and explained.",
keywords = "ENHANCED THERMIONIC EMISSION, ENERGY, SURFACE, PHOTOEMISSION, QUANTIZATION, INTERFACE",
author = "Zhuravlev, {A. G.} and Khoroshilov, {V. S.} and Alperovich, {V. L.}",
year = "2017",
month = may,
day = "1",
doi = "10.1134/S0021364017100149",
language = "English",
volume = "105",
pages = "686--690",
journal = "JETP Letters",
issn = "0021-3640",
publisher = "MAIK NAUKA/INTERPERIODICA/SPRINGER",
number = "10",

}

RIS

TY - JOUR

T1 - Electron emission from Cs/GaAs and GaAs(Cs, О) with positive and negative electron affinity

AU - Zhuravlev, A. G.

AU - Khoroshilov, V. S.

AU - Alperovich, V. L.

PY - 2017/5/1

Y1 - 2017/5/1

N2 - The evolution of probabilities of escape of hot and thermalized electrons from GaAs(001) with adsorbed cesium and oxygen layers to vacuum at the transition from positive to negative effective electron affinity is studied by the photoemission quantum yield spectroscopy. A minimum of the probability of escape of thermalized electrons near zero electron affinity is revealed and explained.

AB - The evolution of probabilities of escape of hot and thermalized electrons from GaAs(001) with adsorbed cesium and oxygen layers to vacuum at the transition from positive to negative effective electron affinity is studied by the photoemission quantum yield spectroscopy. A minimum of the probability of escape of thermalized electrons near zero electron affinity is revealed and explained.

KW - ENHANCED THERMIONIC EMISSION

KW - ENERGY

KW - SURFACE

KW - PHOTOEMISSION

KW - QUANTIZATION

KW - INTERFACE

UR - http://www.scopus.com/inward/record.url?scp=85025170751&partnerID=8YFLogxK

U2 - 10.1134/S0021364017100149

DO - 10.1134/S0021364017100149

M3 - Article

AN - SCOPUS:85025170751

VL - 105

SP - 686

EP - 690

JO - JETP Letters

JF - JETP Letters

SN - 0021-3640

IS - 10

ER -

ID: 10071120