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Electron Effective Mass and g Factor in Wide HgTe Quantum Wells. / Gudina, S. V.; Neverov, V. N.; Ilchenko, E. V. et al.

In: Semiconductors, Vol. 52, No. 1, 01.01.2018, p. 12-18.

Research output: Contribution to journal › Article › peer-review

Harvard

Gudina, SV, Neverov, VN, Ilchenko, EV, Bogolubskii, AS, Harus, GI, Shelushinina, NG, Podgornykh, SM, Yakunin, MV, Mikhailov, NN & Dvoretsky, SA 2018, 'Electron Effective Mass and g Factor in Wide HgTe Quantum Wells', Semiconductors, vol. 52, no. 1, pp. 12-18. https://doi.org/10.1134/S1063782618010098

APA

Gudina, S. V., Neverov, V. N., Ilchenko, E. V., Bogolubskii, A. S., Harus, G. I., Shelushinina, N. G., Podgornykh, S. M., Yakunin, M. V., Mikhailov, N. N., & Dvoretsky, S. A. (2018). Electron Effective Mass and g Factor in Wide HgTe Quantum Wells. Semiconductors, 52(1), 12-18. https://doi.org/10.1134/S1063782618010098

Vancouver

Gudina SV, Neverov VN, Ilchenko EV, Bogolubskii AS, Harus GI, Shelushinina NG et al. Electron Effective Mass and g Factor in Wide HgTe Quantum Wells. Semiconductors. 2018 Jan 1;52(1):12-18. doi: 10.1134/S1063782618010098

Author

Gudina, S. V. ; Neverov, V. N. ; Ilchenko, E. V. et al. / Electron Effective Mass and g Factor in Wide HgTe Quantum Wells. In: Semiconductors. 2018 ; Vol. 52, No. 1. pp. 12-18.

BibTeX

@article{90ec75d99bd04af5b02bb51e596522ed,
title = "Electron Effective Mass and g Factor in Wide HgTe Quantum Wells",
abstract = "The magnetic-field (0 T < B < 9 T) dependence of the longitudinal and Hall resistances at fixed temperatures (2 K < T < 50 K) for the HgCdTe/HgTe/HgCdTe system with a HgTe quantum well 20.3 nm in width are measured. The activation analysis of the magnetoresistance curves is used as a tool for identifying the mobility gaps between neighboring Landau levels. The activation-energy values obtained from the temperature dependences of the longitudinal resistance in the plateau regions of the quantum Hall effect with the filling factors ν = 1, 2, 3 make it possible to estimate the effective mass and the g factor of electrons in the system under study. Indications concerning the possibility of large values of the g factor (≅ 80) are obtained.",
author = "Gudina, {S. V.} and Neverov, {V. N.} and Ilchenko, {E. V.} and Bogolubskii, {A. S.} and Harus, {G. I.} and Shelushinina, {N. G.} and Podgornykh, {S. M.} and Yakunin, {M. V.} and Mikhailov, {N. N.} and Dvoretsky, {S. A.}",
note = "Publisher Copyright: {\textcopyright} 2018, Pleiades Publishing, Ltd.",
year = "2018",
month = jan,
day = "1",
doi = "10.1134/S1063782618010098",
language = "English",
volume = "52",
pages = "12--18",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "PLEIADES PUBLISHING INC",
number = "1",

}

RIS

TY - JOUR

T1 - Electron Effective Mass and g Factor in Wide HgTe Quantum Wells

AU - Gudina, S. V.

AU - Neverov, V. N.

AU - Ilchenko, E. V.

AU - Bogolubskii, A. S.

AU - Harus, G. I.

AU - Shelushinina, N. G.

AU - Podgornykh, S. M.

AU - Yakunin, M. V.

AU - Mikhailov, N. N.

AU - Dvoretsky, S. A.

N1 - Publisher Copyright: © 2018, Pleiades Publishing, Ltd.

PY - 2018/1/1

Y1 - 2018/1/1

N2 - The magnetic-field (0 T < B < 9 T) dependence of the longitudinal and Hall resistances at fixed temperatures (2 K < T < 50 K) for the HgCdTe/HgTe/HgCdTe system with a HgTe quantum well 20.3 nm in width are measured. The activation analysis of the magnetoresistance curves is used as a tool for identifying the mobility gaps between neighboring Landau levels. The activation-energy values obtained from the temperature dependences of the longitudinal resistance in the plateau regions of the quantum Hall effect with the filling factors ν = 1, 2, 3 make it possible to estimate the effective mass and the g factor of electrons in the system under study. Indications concerning the possibility of large values of the g factor (≅ 80) are obtained.

AB - The magnetic-field (0 T < B < 9 T) dependence of the longitudinal and Hall resistances at fixed temperatures (2 K < T < 50 K) for the HgCdTe/HgTe/HgCdTe system with a HgTe quantum well 20.3 nm in width are measured. The activation analysis of the magnetoresistance curves is used as a tool for identifying the mobility gaps between neighboring Landau levels. The activation-energy values obtained from the temperature dependences of the longitudinal resistance in the plateau regions of the quantum Hall effect with the filling factors ν = 1, 2, 3 make it possible to estimate the effective mass and the g factor of electrons in the system under study. Indications concerning the possibility of large values of the g factor (≅ 80) are obtained.

UR - http://www.scopus.com/inward/record.url?scp=85042074461&partnerID=8YFLogxK

U2 - 10.1134/S1063782618010098

DO - 10.1134/S1063782618010098

M3 - Article

AN - SCOPUS:85042074461

VL - 52

SP - 12

EP - 18

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 1

ER -

ID: 10452358