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Electrically controlled switching between spatially separated conducting channels in a quantum point contact. / Сарыпов, Даниил Игоревич; Похабов, Дмитрий Александрович; Погосов, Артур Григорьевич et al.

In: St. Petersburg State Polytechnical University Journal: Physics and Mathematics, Vol. 16, No. 1.3, 20, 2023, p. 117-123.

Research output: Contribution to journal › Article › peer-review

Harvard

Сарыпов, ДИ, Похабов, ДА, Погосов, АГ, Жданов, ЕЮ & Бакаров, АК 2023, 'Electrically controlled switching between spatially separated conducting channels in a quantum point contact', St. Petersburg State Polytechnical University Journal: Physics and Mathematics, vol. 16, no. 1.3, 20, pp. 117-123. https://doi.org/10.18721/JPM.161.320

APA

Сарыпов, Д. И., Похабов, Д. А., Погосов, А. Г., Жданов, Е. Ю., & Бакаров, А. К. (2023). Electrically controlled switching between spatially separated conducting channels in a quantum point contact. St. Petersburg State Polytechnical University Journal: Physics and Mathematics, 16(1.3), 117-123. [20]. https://doi.org/10.18721/JPM.161.320

Vancouver

Сарыпов ДИ, Похабов ДА, Погосов АГ, Жданов ЕЮ, Бакаров АК. Electrically controlled switching between spatially separated conducting channels in a quantum point contact. St. Petersburg State Polytechnical University Journal: Physics and Mathematics. 2023;16(1.3):117-123. 20. doi: 10.18721/JPM.161.320

Author

Сарыпов, Даниил Игоревич ; Похабов, Дмитрий Александрович ; Погосов, Артур Григорьевич et al. / Electrically controlled switching between spatially separated conducting channels in a quantum point contact. In: St. Petersburg State Polytechnical University Journal: Physics and Mathematics. 2023 ; Vol. 16, No. 1.3. pp. 117-123.

BibTeX

@article{7d915d3cc307408e98581e26c2109cfe,
title = "Electrically controlled switching between spatially separated conducting channels in a quantum point contact",
abstract = "We demonstrate transverse magnetic focusing of electrons in semiconductor devices consisting of two trenched-type quantum point contacts (QPC) acting as an injector and a detector. The peak in the detector voltage, corresponding to the penetration of injected electrons into the detector, is observed. Applying the voltage difference between injector side gates is found to cause an abrupt shift of the peak position on the magnetic field scale. This shift can be explained by switching between spatially separated channels inside the multi-well potential formed inside a QPC-injector.",
author = "Сарыпов, {Даниил Игоревич} and Похабов, {Дмитрий Александрович} and Погосов, {Артур Григорьевич} and Жданов, {Евгений Юрьевич} and Бакаров, {Асхат Климович}",
note = "The study was funded by the Russian Science Foundation (project 22-12-00343 − experimental measurements) and the Ministry of Science and Higher Education of the Russian Federation (project FWGW-2022-0011 − characterization of initial heterostructures).",
year = "2023",
doi = "10.18721/JPM.161.320",
language = "English",
volume = "16",
pages = "117--123",
journal = "St. Petersburg State Polytechnical University Journal: Physics and Mathematics",
issn = "2618-8686",
number = "1.3",

}

RIS

TY - JOUR

T1 - Electrically controlled switching between spatially separated conducting channels in a quantum point contact

AU - Сарыпов, Даниил Игоревич

AU - Похабов, Дмитрий Александрович

AU - Погосов, Артур Григорьевич

AU - Жданов, Евгений Юрьевич

AU - Бакаров, Асхат Климович

N1 - The study was funded by the Russian Science Foundation (project 22-12-00343 − experimental measurements) and the Ministry of Science and Higher Education of the Russian Federation (project FWGW-2022-0011 − characterization of initial heterostructures).

PY - 2023

Y1 - 2023

N2 - We demonstrate transverse magnetic focusing of electrons in semiconductor devices consisting of two trenched-type quantum point contacts (QPC) acting as an injector and a detector. The peak in the detector voltage, corresponding to the penetration of injected electrons into the detector, is observed. Applying the voltage difference between injector side gates is found to cause an abrupt shift of the peak position on the magnetic field scale. This shift can be explained by switching between spatially separated channels inside the multi-well potential formed inside a QPC-injector.

AB - We demonstrate transverse magnetic focusing of electrons in semiconductor devices consisting of two trenched-type quantum point contacts (QPC) acting as an injector and a detector. The peak in the detector voltage, corresponding to the penetration of injected electrons into the detector, is observed. Applying the voltage difference between injector side gates is found to cause an abrupt shift of the peak position on the magnetic field scale. This shift can be explained by switching between spatially separated channels inside the multi-well potential formed inside a QPC-injector.

U2 - 10.18721/JPM.161.320

DO - 10.18721/JPM.161.320

M3 - Article

VL - 16

SP - 117

EP - 123

JO - St. Petersburg State Polytechnical University Journal: Physics and Mathematics

JF - St. Petersburg State Polytechnical University Journal: Physics and Mathematics

SN - 2618-8686

IS - 1.3

M1 - 20

ER -

ID: 55569685