Research output: Contribution to journal › Article › peer-review
Electrical control of spin relaxation anisotropy during drift transport in a two-dimensional electron gas. / Hernandez, F. G.G.; Ferreira, G. J.; Luengo-Kovac, M. et al.
In: Physical Review B, Vol. 102, No. 12, 125305, 09.2020.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Electrical control of spin relaxation anisotropy during drift transport in a two-dimensional electron gas
AU - Hernandez, F. G.G.
AU - Ferreira, G. J.
AU - Luengo-Kovac, M.
AU - Sih, V.
AU - Kawahala, N. M.
AU - Gusev, G. M.
AU - Bakarov, A. K.
N1 - F.G.G.H acknowledges financial support from the Sao Paulo Research Foundation (FAPESP) Grant No. 2015/16191-5, No. 2016/50018-1, and No. 2018/06142-5, and Grant No. 301258/2017-1 of the National Council for Scientific and Technological Development (CNPq). G.J.F. acknowledges the financial support from CNPq and FAPEMIG. V.S. was supported by the U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering, Award DE-SC0016206.
PY - 2020/9
Y1 - 2020/9
N2 - Spin relaxation was studied in a two-dimensional electron gas confined in a wide GaAs quantum well. Recently, the control of the spin relaxation anisotropy by diffusive motion was first shown in D. Iizasa et al., arXiv:2006.08253. Here, we demonstrate electrical control by drift transport in a system with two subbands occupied. The combined effect of in-plane and gate voltages was investigated using time-resolved Kerr rotation. The measured relaxation time presents strong anisotropy with respect to the transport direction. For an in-plane accelerating electric field along 110, the lifetime was strongly suppressed irrespective of the applied gate voltage. Remarkably, for transport along 11¯0, the data shows spin lifetime that was gate dependent and longer than in the 110 direction regardless of the in-plane voltage. In agreement, independent results of anisotropic spin precession frequencies are also presented. Nevertheless, the long spin lifetime, strong anisotropy and drift response seen in the data are beyond the existing models for spin drift and diffusion.
AB - Spin relaxation was studied in a two-dimensional electron gas confined in a wide GaAs quantum well. Recently, the control of the spin relaxation anisotropy by diffusive motion was first shown in D. Iizasa et al., arXiv:2006.08253. Here, we demonstrate electrical control by drift transport in a system with two subbands occupied. The combined effect of in-plane and gate voltages was investigated using time-resolved Kerr rotation. The measured relaxation time presents strong anisotropy with respect to the transport direction. For an in-plane accelerating electric field along 110, the lifetime was strongly suppressed irrespective of the applied gate voltage. Remarkably, for transport along 11¯0, the data shows spin lifetime that was gate dependent and longer than in the 110 direction regardless of the in-plane voltage. In agreement, independent results of anisotropic spin precession frequencies are also presented. Nevertheless, the long spin lifetime, strong anisotropy and drift response seen in the data are beyond the existing models for spin drift and diffusion.
KW - SPINTRONICS
UR - http://www.scopus.com/inward/record.url?scp=85092919135&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.102.125305
DO - 10.1103/PhysRevB.102.125305
M3 - Article
AN - SCOPUS:85092919135
VL - 102
JO - Physical Review B
JF - Physical Review B
SN - 2469-9950
IS - 12
M1 - 125305
ER -
ID: 25646489