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Effect of Sn for the dislocation-free SiSn nanostructure formation on the vapor-liquid-crystal mechanism. / Timofeev, Vyacheslav; Mashanov, Vladimir; Nikiforov, Alexander et al.

In: AIP Advances, Vol. 10, No. 1, 015309, 01.01.2020.

Research output: Contribution to journal › Article › peer-review

Harvard

Timofeev, V, Mashanov, V, Nikiforov, A, Skvortsov, I, Gavrilova, T, Gulyaev, D, Gutakovskii, A & Chetyrin, I 2020, 'Effect of Sn for the dislocation-free SiSn nanostructure formation on the vapor-liquid-crystal mechanism', AIP Advances, vol. 10, no. 1, 015309. https://doi.org/10.1063/1.5139936

APA

Timofeev, V., Mashanov, V., Nikiforov, A., Skvortsov, I., Gavrilova, T., Gulyaev, D., Gutakovskii, A., & Chetyrin, I. (2020). Effect of Sn for the dislocation-free SiSn nanostructure formation on the vapor-liquid-crystal mechanism. AIP Advances, 10(1), [015309]. https://doi.org/10.1063/1.5139936

Vancouver

Timofeev V, Mashanov V, Nikiforov A, Skvortsov I, Gavrilova T, Gulyaev D et al. Effect of Sn for the dislocation-free SiSn nanostructure formation on the vapor-liquid-crystal mechanism. AIP Advances. 2020 Jan 1;10(1):015309. doi: 10.1063/1.5139936

Author

Timofeev, Vyacheslav ; Mashanov, Vladimir ; Nikiforov, Alexander et al. / Effect of Sn for the dislocation-free SiSn nanostructure formation on the vapor-liquid-crystal mechanism. In: AIP Advances. 2020 ; Vol. 10, No. 1.

BibTeX

@article{1ce5bbdadf3d41a6b1cb9f8d5426d8c2,
title = "Effect of Sn for the dislocation-free SiSn nanostructure formation on the vapor-liquid-crystal mechanism",
abstract = "Structures with tin-rich island arrays on silicon pedestals were obtained by molecular beam epitaxy using Sn as a catalyst for the growth of nanostructures. A tin island array was used further to study the growth of nanostructures in the process of Si deposition on the surface with Sn islands. It was established that, during the growth on the vapor-liquid-crystal mechanism, tin-rich islands are formed on faceted pedestals. A nanostructured cellular surface was formed between the islands on pedestals. The analysis of the elemental composition of the obtained nanostructures was performed by the methods of energy dispersive X-ray spectroscopy and photoelectron spectroscopy. It is shown that tin-rich islands can contain up to 90% tin, whereas the pedestal consists of silicon. The transmission electron microscopy data demonstrated a distinct crystal structure of tin-rich islands and silicon pedestals, as well as the absence of dislocations in the structures with island arrays on the faceted pedestals. The facet tilt angle is 19° and corresponds to the (311) plane. The photoluminescence signal was observed with a photoluminescence maximum near the wavelength of 1.55 μm.",
author = "Vyacheslav Timofeev and Vladimir Mashanov and Alexander Nikiforov and Ilya Skvortsov and Tatyana Gavrilova and Dmitry Gulyaev and Anton Gutakovskii and Igor Chetyrin",
year = "2020",
month = jan,
day = "1",
doi = "10.1063/1.5139936",
language = "English",
volume = "10",
journal = "AIP Advances",
issn = "2158-3226",
publisher = "AMER INST PHYSICS",
number = "1",

}

RIS

TY - JOUR

T1 - Effect of Sn for the dislocation-free SiSn nanostructure formation on the vapor-liquid-crystal mechanism

AU - Timofeev, Vyacheslav

AU - Mashanov, Vladimir

AU - Nikiforov, Alexander

AU - Skvortsov, Ilya

AU - Gavrilova, Tatyana

AU - Gulyaev, Dmitry

AU - Gutakovskii, Anton

AU - Chetyrin, Igor

PY - 2020/1/1

Y1 - 2020/1/1

N2 - Structures with tin-rich island arrays on silicon pedestals were obtained by molecular beam epitaxy using Sn as a catalyst for the growth of nanostructures. A tin island array was used further to study the growth of nanostructures in the process of Si deposition on the surface with Sn islands. It was established that, during the growth on the vapor-liquid-crystal mechanism, tin-rich islands are formed on faceted pedestals. A nanostructured cellular surface was formed between the islands on pedestals. The analysis of the elemental composition of the obtained nanostructures was performed by the methods of energy dispersive X-ray spectroscopy and photoelectron spectroscopy. It is shown that tin-rich islands can contain up to 90% tin, whereas the pedestal consists of silicon. The transmission electron microscopy data demonstrated a distinct crystal structure of tin-rich islands and silicon pedestals, as well as the absence of dislocations in the structures with island arrays on the faceted pedestals. The facet tilt angle is 19° and corresponds to the (311) plane. The photoluminescence signal was observed with a photoluminescence maximum near the wavelength of 1.55 μm.

AB - Structures with tin-rich island arrays on silicon pedestals were obtained by molecular beam epitaxy using Sn as a catalyst for the growth of nanostructures. A tin island array was used further to study the growth of nanostructures in the process of Si deposition on the surface with Sn islands. It was established that, during the growth on the vapor-liquid-crystal mechanism, tin-rich islands are formed on faceted pedestals. A nanostructured cellular surface was formed between the islands on pedestals. The analysis of the elemental composition of the obtained nanostructures was performed by the methods of energy dispersive X-ray spectroscopy and photoelectron spectroscopy. It is shown that tin-rich islands can contain up to 90% tin, whereas the pedestal consists of silicon. The transmission electron microscopy data demonstrated a distinct crystal structure of tin-rich islands and silicon pedestals, as well as the absence of dislocations in the structures with island arrays on the faceted pedestals. The facet tilt angle is 19° and corresponds to the (311) plane. The photoluminescence signal was observed with a photoluminescence maximum near the wavelength of 1.55 μm.

UR - http://www.scopus.com/inward/record.url?scp=85078287806&partnerID=8YFLogxK

U2 - 10.1063/1.5139936

DO - 10.1063/1.5139936

M3 - Article

AN - SCOPUS:85078287806

VL - 10

JO - AIP Advances

JF - AIP Advances

SN - 2158-3226

IS - 1

M1 - 015309

ER -

ID: 23263613