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Effect of Features of the Band Spectrum on the Characteristics of Stimulated Emission in Narrow-Gap Heterostructures with HgCdTe Quantum Wells. / Rumyantsev, V. V.; Kulikov, N. S.; Kadykov, A. M. et al.

In: Semiconductors, Vol. 52, No. 11, 01.11.2018, p. 1375-1379.

Research output: Contribution to journal › Article › peer-review

Harvard

Rumyantsev, VV, Kulikov, NS, Kadykov, AM, Fadeev, MA, Ikonnikov, AV, Kazakov, AS, Zholudev, MS, Aleshkin, VY, Utochkin, VV, Mikhailov, NN, Dvoretskii, SA, Morozov, SV & Gavrilenko, VI 2018, 'Effect of Features of the Band Spectrum on the Characteristics of Stimulated Emission in Narrow-Gap Heterostructures with HgCdTe Quantum Wells', Semiconductors, vol. 52, no. 11, pp. 1375-1379. https://doi.org/10.1134/S1063782618110234

APA

Rumyantsev, V. V., Kulikov, N. S., Kadykov, A. M., Fadeev, M. A., Ikonnikov, A. V., Kazakov, A. S., Zholudev, M. S., Aleshkin, V. Y., Utochkin, V. V., Mikhailov, N. N., Dvoretskii, S. A., Morozov, S. V., & Gavrilenko, V. I. (2018). Effect of Features of the Band Spectrum on the Characteristics of Stimulated Emission in Narrow-Gap Heterostructures with HgCdTe Quantum Wells. Semiconductors, 52(11), 1375-1379. https://doi.org/10.1134/S1063782618110234

Vancouver

Rumyantsev VV, Kulikov NS, Kadykov AM, Fadeev MA, Ikonnikov AV, Kazakov AS et al. Effect of Features of the Band Spectrum on the Characteristics of Stimulated Emission in Narrow-Gap Heterostructures with HgCdTe Quantum Wells. Semiconductors. 2018 Nov 1;52(11):1375-1379. doi: 10.1134/S1063782618110234

Author

Rumyantsev, V. V. ; Kulikov, N. S. ; Kadykov, A. M. et al. / Effect of Features of the Band Spectrum on the Characteristics of Stimulated Emission in Narrow-Gap Heterostructures with HgCdTe Quantum Wells. In: Semiconductors. 2018 ; Vol. 52, No. 11. pp. 1375-1379.

BibTeX

@article{8d4b3fdbb45d4e56bf92cab3c1fec5d8,
title = "Effect of Features of the Band Spectrum on the Characteristics of Stimulated Emission in Narrow-Gap Heterostructures with HgCdTe Quantum Wells",
abstract = "Abstract: We report on the stimulated emission obtained in the wavelength range of 20.3–17.4 μm on the interband transitions at T = 8–50 K in HgCdTe quantum wells placed in a dielectric waveguide formed from wide-gap CdHgTe solid solution. Heterostructures with HgCdTe quantum wells are interesting for designing long-wavelength lasers operating in the wavelength range of 25–60 μm, which is not covered by currently available quantum cascade lasers. It is shown that the maximum temperature of stimulated emission is determined by the position of lateral maxima in the dispersion dependences in the first valence subband of the quantum well. Methods for suppressing nonradiative recombination in the structures with HgCdTe quantum wells are discussed.",
keywords = "MU-M, WAVELENGTH",
author = "Rumyantsev, {V. V.} and Kulikov, {N. S.} and Kadykov, {A. M.} and Fadeev, {M. A.} and Ikonnikov, {A. V.} and Kazakov, {A. S.} and Zholudev, {M. S.} and Aleshkin, {V. Ya} and Utochkin, {V. V.} and Mikhailov, {N. N.} and Dvoretskii, {S. A.} and Morozov, {S. V.} and Gavrilenko, {V. I.}",
note = "Publisher Copyright: {\textcopyright} 2018, Pleiades Publishing, Ltd.",
year = "2018",
month = nov,
day = "1",
doi = "10.1134/S1063782618110234",
language = "English",
volume = "52",
pages = "1375--1379",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "PLEIADES PUBLISHING INC",
number = "11",

}

RIS

TY - JOUR

T1 - Effect of Features of the Band Spectrum on the Characteristics of Stimulated Emission in Narrow-Gap Heterostructures with HgCdTe Quantum Wells

AU - Rumyantsev, V. V.

AU - Kulikov, N. S.

AU - Kadykov, A. M.

AU - Fadeev, M. A.

AU - Ikonnikov, A. V.

AU - Kazakov, A. S.

AU - Zholudev, M. S.

AU - Aleshkin, V. Ya

AU - Utochkin, V. V.

AU - Mikhailov, N. N.

AU - Dvoretskii, S. A.

AU - Morozov, S. V.

AU - Gavrilenko, V. I.

N1 - Publisher Copyright: © 2018, Pleiades Publishing, Ltd.

PY - 2018/11/1

Y1 - 2018/11/1

N2 - Abstract: We report on the stimulated emission obtained in the wavelength range of 20.3–17.4 μm on the interband transitions at T = 8–50 K in HgCdTe quantum wells placed in a dielectric waveguide formed from wide-gap CdHgTe solid solution. Heterostructures with HgCdTe quantum wells are interesting for designing long-wavelength lasers operating in the wavelength range of 25–60 μm, which is not covered by currently available quantum cascade lasers. It is shown that the maximum temperature of stimulated emission is determined by the position of lateral maxima in the dispersion dependences in the first valence subband of the quantum well. Methods for suppressing nonradiative recombination in the structures with HgCdTe quantum wells are discussed.

AB - Abstract: We report on the stimulated emission obtained in the wavelength range of 20.3–17.4 μm on the interband transitions at T = 8–50 K in HgCdTe quantum wells placed in a dielectric waveguide formed from wide-gap CdHgTe solid solution. Heterostructures with HgCdTe quantum wells are interesting for designing long-wavelength lasers operating in the wavelength range of 25–60 μm, which is not covered by currently available quantum cascade lasers. It is shown that the maximum temperature of stimulated emission is determined by the position of lateral maxima in the dispersion dependences in the first valence subband of the quantum well. Methods for suppressing nonradiative recombination in the structures with HgCdTe quantum wells are discussed.

KW - MU-M

KW - WAVELENGTH

UR - http://www.scopus.com/inward/record.url?scp=85055272657&partnerID=8YFLogxK

U2 - 10.1134/S1063782618110234

DO - 10.1134/S1063782618110234

M3 - Article

AN - SCOPUS:85055272657

VL - 52

SP - 1375

EP - 1379

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 11

ER -

ID: 17233385