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Effect of Disorder on Magnetotransport in Semiconductor Artificial Graphene. / Tkachenko, O. A.; Tkachenko, V. A.; Baksheev, D. G. et al.

In: JETP Letters, Vol. 117, No. 3, 02.2023, p. 222-227.

Research output: Contribution to journal › Article › peer-review

Harvard

Tkachenko, OA, Tkachenko, VA, Baksheev, DG & Sushkov, OP 2023, 'Effect of Disorder on Magnetotransport in Semiconductor Artificial Graphene', JETP Letters, vol. 117, no. 3, pp. 222-227. https://doi.org/10.1134/S0021364022603219

APA

Tkachenko, O. A., Tkachenko, V. A., Baksheev, D. G., & Sushkov, O. P. (2023). Effect of Disorder on Magnetotransport in Semiconductor Artificial Graphene. JETP Letters, 117(3), 222-227. https://doi.org/10.1134/S0021364022603219

Vancouver

Tkachenko OA, Tkachenko VA, Baksheev DG, Sushkov OP. Effect of Disorder on Magnetotransport in Semiconductor Artificial Graphene. JETP Letters. 2023 Feb;117(3):222-227. doi: 10.1134/S0021364022603219

Author

Tkachenko, O. A. ; Tkachenko, V. A. ; Baksheev, D. G. et al. / Effect of Disorder on Magnetotransport in Semiconductor Artificial Graphene. In: JETP Letters. 2023 ; Vol. 117, No. 3. pp. 222-227.

BibTeX

@article{3e1b05a97e7e4c97bf05d8c2876b982b,
title = "Effect of Disorder on Magnetotransport in Semiconductor Artificial Graphene",
abstract = "Magnetotransport in mesoscopic samples with semiconductor artificial graphene has been simulated within the Landauer–B{\"u}ttiker formalism. Model four-terminal systems in a high-mobility two-dimensional electron gas have a square shape with a side of 3–5 μm, which is filled with a short-period (120 nm) weakly disordered triangular lattice of antidots at the modulation amplitude of the electrostatic potential comparable with the Fermi energy. It has been found that the Hall resistance $${{R}_{{xy}}}(B)$$ in the magnetic field range of B = 10–50 mT has a hole plateau $${{R}_{{xy}}} = - {{R}_{0}}$$, where R0 = h/2e2 = 12.9 kΩ, at carrier densities in the lattice below the Dirac point n < n1D and an electron plateau $${{R}_{{xy}}} = {{R}_{0}}$$ at n > n1D. Enhanced disorder destroys the plateaus, but a carrier type (electrons or holes) holds. Long-range disorder at low magnetic fields suppresses quantized resistance plateaus much more efficiently than short-range disorder.",
author = "Tkachenko, {O. A.} and Tkachenko, {V. A.} and Baksheev, {D. G.} and Sushkov, {O. P.}",
note = "This work was performed using resources of the Joint Supercomputer Center, Russian Academy of Sciences, and was supported by the Russian Science Foundation, project no. 19-72-30023.",
year = "2023",
month = feb,
doi = "10.1134/S0021364022603219",
language = "English",
volume = "117",
pages = "222--227",
journal = "JETP Letters",
issn = "0021-3640",
publisher = "MAIK NAUKA/INTERPERIODICA/SPRINGER",
number = "3",

}

RIS

TY - JOUR

T1 - Effect of Disorder on Magnetotransport in Semiconductor Artificial Graphene

AU - Tkachenko, O. A.

AU - Tkachenko, V. A.

AU - Baksheev, D. G.

AU - Sushkov, O. P.

N1 - This work was performed using resources of the Joint Supercomputer Center, Russian Academy of Sciences, and was supported by the Russian Science Foundation, project no. 19-72-30023.

PY - 2023/2

Y1 - 2023/2

N2 - Magnetotransport in mesoscopic samples with semiconductor artificial graphene has been simulated within the Landauer–Büttiker formalism. Model four-terminal systems in a high-mobility two-dimensional electron gas have a square shape with a side of 3–5 μm, which is filled with a short-period (120 nm) weakly disordered triangular lattice of antidots at the modulation amplitude of the electrostatic potential comparable with the Fermi energy. It has been found that the Hall resistance $${{R}_{{xy}}}(B)$$ in the magnetic field range of B = 10–50 mT has a hole plateau $${{R}_{{xy}}} = - {{R}_{0}}$$, where R0 = h/2e2 = 12.9 kΩ, at carrier densities in the lattice below the Dirac point n < n1D and an electron plateau $${{R}_{{xy}}} = {{R}_{0}}$$ at n > n1D. Enhanced disorder destroys the plateaus, but a carrier type (electrons or holes) holds. Long-range disorder at low magnetic fields suppresses quantized resistance plateaus much more efficiently than short-range disorder.

AB - Magnetotransport in mesoscopic samples with semiconductor artificial graphene has been simulated within the Landauer–Büttiker formalism. Model four-terminal systems in a high-mobility two-dimensional electron gas have a square shape with a side of 3–5 μm, which is filled with a short-period (120 nm) weakly disordered triangular lattice of antidots at the modulation amplitude of the electrostatic potential comparable with the Fermi energy. It has been found that the Hall resistance $${{R}_{{xy}}}(B)$$ in the magnetic field range of B = 10–50 mT has a hole plateau $${{R}_{{xy}}} = - {{R}_{0}}$$, where R0 = h/2e2 = 12.9 kΩ, at carrier densities in the lattice below the Dirac point n < n1D and an electron plateau $${{R}_{{xy}}} = {{R}_{0}}$$ at n > n1D. Enhanced disorder destroys the plateaus, but a carrier type (electrons or holes) holds. Long-range disorder at low magnetic fields suppresses quantized resistance plateaus much more efficiently than short-range disorder.

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85160217221&origin=inward&txGid=1731d8948c9dc03fefabd53ca0160942

UR - https://www.mendeley.com/catalogue/6d710a34-1373-3d61-a970-a7984a7c0d1f/

U2 - 10.1134/S0021364022603219

DO - 10.1134/S0021364022603219

M3 - Article

VL - 117

SP - 222

EP - 227

JO - JETP Letters

JF - JETP Letters

SN - 0021-3640

IS - 3

ER -

ID: 59242006