Effect of Adhesive Layers on Photocurrent Enhancement in Near-Infrared Quantum-Dot Photodetectors Coupled with Metal-Nanodisk Arrays

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Effect of Adhesive Layers on Photocurrent Enhancement in Near-Infrared Quantum-Dot Photodetectors Coupled with Metal-Nanodisk Arrays. / Yakimov, A. I.; Kirienko, V. V.; Bloshkin, A. A. et al.

In: Semiconductors, Vol. 55, No. 8, 01.08.2021, p. 654-659.

Research output: Contribution to journal › Article › peer-review

BibTeX

@article{5ad1b23a3e6c4f2aa9ef14afeac793ed,

title = "Effect of Adhesive Layers on Photocurrent Enhancement in Near-Infrared Quantum-Dot Photodetectors Coupled with Metal-Nanodisk Arrays",

abstract = "Plasmon-enhanced planar Ge/Si photodetectors with Ge quantum dots on silicon-on-insulator substrates coupled with regular arrays of metal nanodisks on their surface are developed. It is found that the introduction of adhesive layers necessary for the formation of stable nanostructures from noble metals leads to the suppression of surface plasmon resonance. The selection of aluminum nanodiscs, which require no adhesive layers, increases the efficiency of photodetectors by 40 times at a wavelength of 1.2 μm and by 15 times at λ = 1.65 μm.",

keywords = "Ge/Si quantum dots, localized surface plasmons, photodetectors",

author = "Yakimov, {A. I.} and Kirienko, {V. V.} and Bloshkin, {A. A.} and Dvurechenskii, {A. V.} and Utkin, {D. E.}",

note = "Funding Information: We thank V.A. Armbrister for the growth of Ge/Si heterostructures by molecular-beam epitaxy. Electron lithography was performed at the Research Center of the Physics Faculty of Novosibirsk State University. Funding Information: The study was funded by the Russian Science Foundation, project no. 19-12-00070. Publisher Copyright: {\textcopyright} 2021, Pleiades Publishing, Ltd.",

year = "2021",

month = aug,

day = "1",

doi = "10.1134/S1063782621070204",

language = "English",

volume = "55",

pages = "654--659",

journal = "Semiconductors",

issn = "1063-7826",

publisher = "PLEIADES PUBLISHING INC",

number = "8",

}

RIS

TY - JOUR

T1 - Effect of Adhesive Layers on Photocurrent Enhancement in Near-Infrared Quantum-Dot Photodetectors Coupled with Metal-Nanodisk Arrays

AU - Yakimov, A. I.

AU - Kirienko, V. V.

AU - Bloshkin, A. A.

AU - Dvurechenskii, A. V.

AU - Utkin, D. E.

N1 - Funding Information: We thank V.A. Armbrister for the growth of Ge/Si heterostructures by molecular-beam epitaxy. Electron lithography was performed at the Research Center of the Physics Faculty of Novosibirsk State University. Funding Information: The study was funded by the Russian Science Foundation, project no. 19-12-00070. Publisher Copyright: © 2021, Pleiades Publishing, Ltd.

PY - 2021/8/1

Y1 - 2021/8/1

N2 - Plasmon-enhanced planar Ge/Si photodetectors with Ge quantum dots on silicon-on-insulator substrates coupled with regular arrays of metal nanodisks on their surface are developed. It is found that the introduction of adhesive layers necessary for the formation of stable nanostructures from noble metals leads to the suppression of surface plasmon resonance. The selection of aluminum nanodiscs, which require no adhesive layers, increases the efficiency of photodetectors by 40 times at a wavelength of 1.2 μm and by 15 times at λ = 1.65 μm.

AB - Plasmon-enhanced planar Ge/Si photodetectors with Ge quantum dots on silicon-on-insulator substrates coupled with regular arrays of metal nanodisks on their surface are developed. It is found that the introduction of adhesive layers necessary for the formation of stable nanostructures from noble metals leads to the suppression of surface plasmon resonance. The selection of aluminum nanodiscs, which require no adhesive layers, increases the efficiency of photodetectors by 40 times at a wavelength of 1.2 μm and by 15 times at λ = 1.65 μm.

KW - Ge/Si quantum dots

KW - localized surface plasmons

KW - photodetectors

UR - http://www.scopus.com/inward/record.url?scp=85124763563&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/64e4f70c-1769-348f-a6f9-204c7eeb22bf/

U2 - 10.1134/S1063782621070204

DO - 10.1134/S1063782621070204

M3 - Article

AN - SCOPUS:85124763563

VL - 55

SP - 654

EP - 659

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 8

ER -

ID: 35533414