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Effect of a Magnetic Field on Wideband Terahertz Generation on the Surface of Semiconductors. / Antsygin, Valery D.; Mamrashev, Alexander A.; Nikolaev, Nazar A. et al.

In: IEEE Transactions on Terahertz Science and Technology, Vol. 5, No. 4, 7137677, 01.07.2015, p. 673-679.

Research output: Contribution to journal › Article › peer-review

Harvard

Antsygin, VD, Mamrashev, AA, Nikolaev, NA & Potaturkin, OI 2015, 'Effect of a Magnetic Field on Wideband Terahertz Generation on the Surface of Semiconductors', IEEE Transactions on Terahertz Science and Technology, vol. 5, no. 4, 7137677, pp. 673-679. https://doi.org/10.1109/TTHZ.2015.2443493

APA

Antsygin, V. D., Mamrashev, A. A., Nikolaev, N. A., & Potaturkin, O. I. (2015). Effect of a Magnetic Field on Wideband Terahertz Generation on the Surface of Semiconductors. IEEE Transactions on Terahertz Science and Technology, 5(4), 673-679. [7137677]. https://doi.org/10.1109/TTHZ.2015.2443493

Vancouver

Antsygin VD, Mamrashev AA, Nikolaev NA, Potaturkin OI. Effect of a Magnetic Field on Wideband Terahertz Generation on the Surface of Semiconductors. IEEE Transactions on Terahertz Science and Technology. 2015 Jul 1;5(4):673-679. 7137677. doi: 10.1109/TTHZ.2015.2443493

Author

Antsygin, Valery D. ; Mamrashev, Alexander A. ; Nikolaev, Nazar A. et al. / Effect of a Magnetic Field on Wideband Terahertz Generation on the Surface of Semiconductors. In: IEEE Transactions on Terahertz Science and Technology. 2015 ; Vol. 5, No. 4. pp. 673-679.

BibTeX

@article{4883d421fa3c4d148e7505039671a939,
title = "Effect of a Magnetic Field on Wideband Terahertz Generation on the Surface of Semiconductors",
abstract = "The effect of a magnetic field on the enhancement of the efficiency of terahertz (THz) generation on the surface of narrow-gap semiconductors is analyzed. A novel small-size THz generator is proposed. It consists of two permanent magnets with opposite magnetization placed on a yoke forming Kittel structure. The construction provides magnetic field concentration in the active zone of a semiconductor placed closely on top of the magnets. Its capabilities of converting femtosecond pulses of the first and second harmonics of an erbium fiber laser are investigated by THz time-domain spectrometer. n-InAs and η-InSb semiconductors in the magnetic field of 0.8 T prove to be the best THz generators at 775-and 1550-nm pump wavelengths correspondingly.",
keywords = "InAs, InSb, magnetic field, narrow-gap semiconductor, optical rectification, photo-Dember effect, terahertz (THz) generator, THz spectroscopy",
author = "Antsygin, {Valery D.} and Mamrashev, {Alexander A.} and Nikolaev, {Nazar A.} and Potaturkin, {Oleg I.}",
year = "2015",
month = jul,
day = "1",
doi = "10.1109/TTHZ.2015.2443493",
language = "English",
volume = "5",
pages = "673--679",
journal = "IEEE Transactions on Terahertz Science and Technology",
issn = "2156-342X",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "4",

}

RIS

TY - JOUR

T1 - Effect of a Magnetic Field on Wideband Terahertz Generation on the Surface of Semiconductors

AU - Antsygin, Valery D.

AU - Mamrashev, Alexander A.

AU - Nikolaev, Nazar A.

AU - Potaturkin, Oleg I.

PY - 2015/7/1

Y1 - 2015/7/1

N2 - The effect of a magnetic field on the enhancement of the efficiency of terahertz (THz) generation on the surface of narrow-gap semiconductors is analyzed. A novel small-size THz generator is proposed. It consists of two permanent magnets with opposite magnetization placed on a yoke forming Kittel structure. The construction provides magnetic field concentration in the active zone of a semiconductor placed closely on top of the magnets. Its capabilities of converting femtosecond pulses of the first and second harmonics of an erbium fiber laser are investigated by THz time-domain spectrometer. n-InAs and η-InSb semiconductors in the magnetic field of 0.8 T prove to be the best THz generators at 775-and 1550-nm pump wavelengths correspondingly.

AB - The effect of a magnetic field on the enhancement of the efficiency of terahertz (THz) generation on the surface of narrow-gap semiconductors is analyzed. A novel small-size THz generator is proposed. It consists of two permanent magnets with opposite magnetization placed on a yoke forming Kittel structure. The construction provides magnetic field concentration in the active zone of a semiconductor placed closely on top of the magnets. Its capabilities of converting femtosecond pulses of the first and second harmonics of an erbium fiber laser are investigated by THz time-domain spectrometer. n-InAs and η-InSb semiconductors in the magnetic field of 0.8 T prove to be the best THz generators at 775-and 1550-nm pump wavelengths correspondingly.

KW - InAs

KW - InSb

KW - magnetic field

KW - narrow-gap semiconductor

KW - optical rectification

KW - photo-Dember effect

KW - terahertz (THz) generator

KW - THz spectroscopy

UR - http://www.scopus.com/inward/record.url?scp=85027957528&partnerID=8YFLogxK

U2 - 10.1109/TTHZ.2015.2443493

DO - 10.1109/TTHZ.2015.2443493

M3 - Article

AN - SCOPUS:85027957528

VL - 5

SP - 673

EP - 679

JO - IEEE Transactions on Terahertz Science and Technology

JF - IEEE Transactions on Terahertz Science and Technology

SN - 2156-342X

IS - 4

M1 - 7137677

ER -

ID: 25326031