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Dislocation etching of diamond crystals grown in Mg-C system with the addition of silicon. / Khokhryakov, Alexander F.; Palyanov, Yuri N.; Borzdov, Yuri M. et al.

In: Diamond and Related Materials, Vol. 88, 01.09.2018, p. 67-73.

Research output: Contribution to journal › Article › peer-review

Harvard

Khokhryakov, AF, Palyanov, YN, Borzdov, YM, Kozhukhov, AS & Sheglov, DV 2018, 'Dislocation etching of diamond crystals grown in Mg-C system with the addition of silicon', Diamond and Related Materials, vol. 88, pp. 67-73. https://doi.org/10.1016/j.diamond.2018.06.025

APA

Khokhryakov, A. F., Palyanov, Y. N., Borzdov, Y. M., Kozhukhov, A. S., & Sheglov, D. V. (2018). Dislocation etching of diamond crystals grown in Mg-C system with the addition of silicon. Diamond and Related Materials, 88, 67-73. https://doi.org/10.1016/j.diamond.2018.06.025

Vancouver

Khokhryakov AF, Palyanov YN, Borzdov YM, Kozhukhov AS, Sheglov DV. Dislocation etching of diamond crystals grown in Mg-C system with the addition of silicon. Diamond and Related Materials. 2018 Sept 1;88:67-73. doi: 10.1016/j.diamond.2018.06.025

Author

Khokhryakov, Alexander F. ; Palyanov, Yuri N. ; Borzdov, Yuri M. et al. / Dislocation etching of diamond crystals grown in Mg-C system with the addition of silicon. In: Diamond and Related Materials. 2018 ; Vol. 88. pp. 67-73.

BibTeX

@article{e7109e7a629442e799798e1f8e0a2133,
title = "Dislocation etching of diamond crystals grown in Mg-C system with the addition of silicon",
abstract = "The dislocation structure of diamond crystals grown in the Mg-Si-C system at pressure of 7.0–7.5 GPa and temperature of 1800 °C was studied by selective etching. We determined the dislocation density and identified individual features of etching for the growth sectors of {111} and {100} faces. On the {111} faces, all etch pits formed at the outcrops of different dislocations were found to be identical. The feature of grown diamond crystals is the presence of numerous large dislocation loops in the {100} growth sectors. The identified patterns of crystals etching and the internal crystal structure features are associated with the presence of a silicon impurity in the grown diamonds.",
keywords = "Dislocations, Etching, High pressure high temperature (HPHT), Synthetic diamond, SINGLE-CRYSTALS, PLATELETS, IMPURITY, LOOPS",
author = "Khokhryakov, {Alexander F.} and Palyanov, {Yuri N.} and Borzdov, {Yuri M.} and Kozhukhov, {Anton S.} and Sheglov, {Dmitriy V.}",
year = "2018",
month = sep,
day = "1",
doi = "10.1016/j.diamond.2018.06.025",
language = "English",
volume = "88",
pages = "67--73",
journal = "Diamond and Related Materials",
issn = "0925-9635",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Dislocation etching of diamond crystals grown in Mg-C system with the addition of silicon

AU - Khokhryakov, Alexander F.

AU - Palyanov, Yuri N.

AU - Borzdov, Yuri M.

AU - Kozhukhov, Anton S.

AU - Sheglov, Dmitriy V.

PY - 2018/9/1

Y1 - 2018/9/1

N2 - The dislocation structure of diamond crystals grown in the Mg-Si-C system at pressure of 7.0–7.5 GPa and temperature of 1800 °C was studied by selective etching. We determined the dislocation density and identified individual features of etching for the growth sectors of {111} and {100} faces. On the {111} faces, all etch pits formed at the outcrops of different dislocations were found to be identical. The feature of grown diamond crystals is the presence of numerous large dislocation loops in the {100} growth sectors. The identified patterns of crystals etching and the internal crystal structure features are associated with the presence of a silicon impurity in the grown diamonds.

AB - The dislocation structure of diamond crystals grown in the Mg-Si-C system at pressure of 7.0–7.5 GPa and temperature of 1800 °C was studied by selective etching. We determined the dislocation density and identified individual features of etching for the growth sectors of {111} and {100} faces. On the {111} faces, all etch pits formed at the outcrops of different dislocations were found to be identical. The feature of grown diamond crystals is the presence of numerous large dislocation loops in the {100} growth sectors. The identified patterns of crystals etching and the internal crystal structure features are associated with the presence of a silicon impurity in the grown diamonds.

KW - Dislocations

KW - Etching

KW - High pressure high temperature (HPHT)

KW - Synthetic diamond

KW - SINGLE-CRYSTALS

KW - PLATELETS

KW - IMPURITY

KW - LOOPS

UR - http://www.scopus.com/inward/record.url?scp=85049348323&partnerID=8YFLogxK

U2 - 10.1016/j.diamond.2018.06.025

DO - 10.1016/j.diamond.2018.06.025

M3 - Article

AN - SCOPUS:85049348323

VL - 88

SP - 67

EP - 73

JO - Diamond and Related Materials

JF - Diamond and Related Materials

SN - 0925-9635

ER -

ID: 14318101