Dislocation contrast in cathodoluminescence and electron-beam induced current maps on GaN(0 0 0 1)

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	405101
Number of pages	11
Journal	Journal Physics D: Applied Physics
Volume	50
Issue number	40
DOIs	https://doi.org/10.1088/1361-6463/aa85c8
Publication status	Published - 11 Sept 2017

cathodoluminescence, dislocation, EBIC, GaN, RECOMBINATION, SEMICONDUCTOR, THREADING DISLOCATIONS, THEORETICAL DESCRIPTION, LIGHT-EMITTING-DIODES, CHARGE-COLLECTION, GAN, SEM, DIFFUSION LENGTH, LOCALIZED DEFECTS

ID: 9055809