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Diamond single crystal-surface modification under high- fluence ion irradiation. / Anikin, V. A.; Borisov, A. M.; Kazakov, V. A. et al.

In: Journal of Physics: Conference Series, Vol. 747, No. 1, 012025, 21.09.2016.

Research output: Contribution to journal › Conference article › peer-review

Harvard

Anikin, VA, Borisov, AM, Kazakov, VA, Mashkova, ES, Palyanov, YN, Popov, VP, Shmytkova, EA & Sigalaev, SK 2016, 'Diamond single crystal-surface modification under high- fluence ion irradiation', Journal of Physics: Conference Series, vol. 747, no. 1, 012025. https://doi.org/10.1088/1742-6596/747/1/012025

APA

Anikin, V. A., Borisov, A. M., Kazakov, V. A., Mashkova, E. S., Palyanov, Y. N., Popov, V. P., Shmytkova, E. A., & Sigalaev, S. K. (2016). Diamond single crystal-surface modification under high- fluence ion irradiation. Journal of Physics: Conference Series, 747(1), [012025]. https://doi.org/10.1088/1742-6596/747/1/012025

Vancouver

Anikin VA, Borisov AM, Kazakov VA, Mashkova ES, Palyanov YN, Popov VP et al. Diamond single crystal-surface modification under high- fluence ion irradiation. Journal of Physics: Conference Series. 2016 Sept 21;747(1):012025. doi: 10.1088/1742-6596/747/1/012025

Author

Anikin, V. A. ; Borisov, A. M. ; Kazakov, V. A. et al. / Diamond single crystal-surface modification under high- fluence ion irradiation. In: Journal of Physics: Conference Series. 2016 ; Vol. 747, No. 1.

BibTeX

@article{9f7a1ac9667147cd88e9069930142abe,
title = "Diamond single crystal-surface modification under high- fluence ion irradiation",
abstract = "The modification of (111) face of synthetic diamond has been studied experimentally for high-fluence 30 keV argon bombardment. It has been found that ion irradiation leads to the electrically conductive layer formation the sheet resistance of which decreases more than 100 times while changing the temperature of the irradiated diamond from 70 to 400 oC. This effect, as well as significant changes of optical transmittance after ion irradiation are associated with ion-induced structural changes of irradiated diamond obtained by the methods of Raman spectroscopy.",
author = "Anikin, {V. A.} and Borisov, {A. M.} and Kazakov, {V. A.} and Mashkova, {E. S.} and Palyanov, {Yu N.} and Popov, {V. P.} and Shmytkova, {E. A.} and Sigalaev, {S. K.}",
year = "2016",
month = sep,
day = "21",
doi = "10.1088/1742-6596/747/1/012025",
language = "English",
volume = "747",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "1",
note = "2nd Conference on Plasma and Laser Research and Technologies ; Conference date: 25-01-2016 Through 27-01-2016",

}

RIS

TY - JOUR

T1 - Diamond single crystal-surface modification under high- fluence ion irradiation

AU - Anikin, V. A.

AU - Borisov, A. M.

AU - Kazakov, V. A.

AU - Mashkova, E. S.

AU - Palyanov, Yu N.

AU - Popov, V. P.

AU - Shmytkova, E. A.

AU - Sigalaev, S. K.

PY - 2016/9/21

Y1 - 2016/9/21

N2 - The modification of (111) face of synthetic diamond has been studied experimentally for high-fluence 30 keV argon bombardment. It has been found that ion irradiation leads to the electrically conductive layer formation the sheet resistance of which decreases more than 100 times while changing the temperature of the irradiated diamond from 70 to 400 oC. This effect, as well as significant changes of optical transmittance after ion irradiation are associated with ion-induced structural changes of irradiated diamond obtained by the methods of Raman spectroscopy.

AB - The modification of (111) face of synthetic diamond has been studied experimentally for high-fluence 30 keV argon bombardment. It has been found that ion irradiation leads to the electrically conductive layer formation the sheet resistance of which decreases more than 100 times while changing the temperature of the irradiated diamond from 70 to 400 oC. This effect, as well as significant changes of optical transmittance after ion irradiation are associated with ion-induced structural changes of irradiated diamond obtained by the methods of Raman spectroscopy.

UR - http://www.scopus.com/inward/record.url?scp=84992013338&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/747/1/012025

DO - 10.1088/1742-6596/747/1/012025

M3 - Conference article

AN - SCOPUS:84992013338

VL - 747

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012025

T2 - 2nd Conference on Plasma and Laser Research and Technologies

Y2 - 25 January 2016 through 27 January 2016

ER -

ID: 25723853