Standard

Diamond crystallization from a tin-carbon system at HPHT conditions. / Palyanov, Yuri N.; Borzdov, Yuri M.; Kupriyanov, Igor N. et al.

In: Diamond and Related Materials, Vol. 58, 6412, 14.06.2015, p. 40-45.

Research output: Contribution to journal › Article › peer-review

Harvard

Palyanov, YN, Borzdov, YM, Kupriyanov, IN, Bataleva, YV & Khohkhryakov, AF 2015, 'Diamond crystallization from a tin-carbon system at HPHT conditions', Diamond and Related Materials, vol. 58, 6412, pp. 40-45. https://doi.org/10.1016/j.diamond.2015.06.003

APA

Palyanov, Y. N., Borzdov, Y. M., Kupriyanov, I. N., Bataleva, Y. V., & Khohkhryakov, A. F. (2015). Diamond crystallization from a tin-carbon system at HPHT conditions. Diamond and Related Materials, 58, 40-45. [6412]. https://doi.org/10.1016/j.diamond.2015.06.003

Vancouver

Palyanov YN, Borzdov YM, Kupriyanov IN, Bataleva YV, Khohkhryakov AF. Diamond crystallization from a tin-carbon system at HPHT conditions. Diamond and Related Materials. 2015 Jun 14;58:40-45. 6412. doi: 10.1016/j.diamond.2015.06.003

Author

Palyanov, Yuri N. ; Borzdov, Yuri M. ; Kupriyanov, Igor N. et al. / Diamond crystallization from a tin-carbon system at HPHT conditions. In: Diamond and Related Materials. 2015 ; Vol. 58. pp. 40-45.

BibTeX

@article{3bdb0b68084047e09a9c6c6f4fdf1608,
title = "Diamond crystallization from a tin-carbon system at HPHT conditions",
abstract = "Diamond crystallization from the tin-carbon system has been studied at 7 GPa and temperatures ranging from 1600 to 1900 °C with reaction times from 1 to 20 h. Both diamond growth on the seed crystals and diamond spontaneous nucleation were established, providing evidence for the catalytic ability of tin. A distinctive feature of the Sn-C system is the existence of a significant induction period preceding diamond spontaneous nucleation. Temperature and kinetics are found to be the main factors governing diamond crystallization process. The minimum parameters of diamond spontaneous nucleation are determined to be 7 GPa, 1700 °C and 20 h. The stable form of diamond growth is octahedron and it does not depend on temperature. Synthesized diamonds contain high concentrations of nitrogen impurities up to about 1600 ppm.",
keywords = "Defect characterization, High pressure high temperature, Nitrogen impurities, Solvent-catalysts, Synthetic diamond",
author = "Palyanov, {Yuri N.} and Borzdov, {Yuri M.} and Kupriyanov, {Igor N.} and Bataleva, {Yuliya V.} and Khohkhryakov, {Alexander F.}",
year = "2015",
month = jun,
day = "14",
doi = "10.1016/j.diamond.2015.06.003",
language = "English",
volume = "58",
pages = "40--45",
journal = "Diamond and Related Materials",
issn = "0925-9635",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Diamond crystallization from a tin-carbon system at HPHT conditions

AU - Palyanov, Yuri N.

AU - Borzdov, Yuri M.

AU - Kupriyanov, Igor N.

AU - Bataleva, Yuliya V.

AU - Khohkhryakov, Alexander F.

PY - 2015/6/14

Y1 - 2015/6/14

N2 - Diamond crystallization from the tin-carbon system has been studied at 7 GPa and temperatures ranging from 1600 to 1900 °C with reaction times from 1 to 20 h. Both diamond growth on the seed crystals and diamond spontaneous nucleation were established, providing evidence for the catalytic ability of tin. A distinctive feature of the Sn-C system is the existence of a significant induction period preceding diamond spontaneous nucleation. Temperature and kinetics are found to be the main factors governing diamond crystallization process. The minimum parameters of diamond spontaneous nucleation are determined to be 7 GPa, 1700 °C and 20 h. The stable form of diamond growth is octahedron and it does not depend on temperature. Synthesized diamonds contain high concentrations of nitrogen impurities up to about 1600 ppm.

AB - Diamond crystallization from the tin-carbon system has been studied at 7 GPa and temperatures ranging from 1600 to 1900 °C with reaction times from 1 to 20 h. Both diamond growth on the seed crystals and diamond spontaneous nucleation were established, providing evidence for the catalytic ability of tin. A distinctive feature of the Sn-C system is the existence of a significant induction period preceding diamond spontaneous nucleation. Temperature and kinetics are found to be the main factors governing diamond crystallization process. The minimum parameters of diamond spontaneous nucleation are determined to be 7 GPa, 1700 °C and 20 h. The stable form of diamond growth is octahedron and it does not depend on temperature. Synthesized diamonds contain high concentrations of nitrogen impurities up to about 1600 ppm.

KW - Defect characterization

KW - High pressure high temperature

KW - Nitrogen impurities

KW - Solvent-catalysts

KW - Synthetic diamond

UR - http://www.scopus.com/inward/record.url?scp=84931265933&partnerID=8YFLogxK

U2 - 10.1016/j.diamond.2015.06.003

DO - 10.1016/j.diamond.2015.06.003

M3 - Article

AN - SCOPUS:84931265933

VL - 58

SP - 40

EP - 45

JO - Diamond and Related Materials

JF - Diamond and Related Materials

SN - 0925-9635

M1 - 6412

ER -

ID: 25727248