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Development of a silicon microstrip detector with single photon sensitivity for fast dynamic diffraction experiments at a synchrotron radiation beam. / Arakcheev, A.; Aulchenko, V.; Kudashkin, D. et al.

In: Journal of Instrumentation, Vol. 12, No. 6, 06002, 05.06.2017.

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Arakcheev A, Aulchenko V, Kudashkin D, Shekhtman L, Tolochko B, Zhulanov V. Development of a silicon microstrip detector with single photon sensitivity for fast dynamic diffraction experiments at a synchrotron radiation beam. Journal of Instrumentation. 2017 Jun 5;12(6):06002. doi: 10.1088/1748-0221/12/06/C06002

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@article{6b1fa73c32c044769976d4b659df3d58,
title = "Development of a silicon microstrip detector with single photon sensitivity for fast dynamic diffraction experiments at a synchrotron radiation beam",
abstract = "Time-resolved experiments on the diffraction of synchrotron radiation (SR) from crystalline materials provide information on the evolution of a material structure after a heat, electron beam or plasma interaction with a sample under study. Changes in the material structure happen within a microsecond scale and a detector with corresponding parameters is needed. The SR channel 8 of the VEPP-4M storage ring provides radiation from the 7-pole wiggler that allows to reach several tens photons within one μs from a tungsten crystal for the most intensive diffraction peak. In order to perform experiments that allow to measure the evolution of tungsten crystalline structure under the impact of powerful laser beam, a new detector is developed, that can provide information about the distribution of a scattered SR flux in space and its evolution in time at a microsecond scale. The detector is based on the silicon p-in-n microstrip sensor with DC-coupled metal strips. The sensor contains 1024 30 mm long strips with a 50 μm pitch. 64 strips are bonded to the front-end electronics based on APC128 ASICs. The APC128 ASIC contains 128 channels that consist of a low noise integrator with 32 analogue memory cells each. The integrator equivalent noise charge is about 2000 electrons and thus the signal from individual photons with energy above 40 keV can be observed. The signal can be stored at the analogue memory with 10 MHz rate. The first measurements with the beam scattered from a tungsten crystal with energy near 60 keV demonstrated the capability of this prototype to observe the spatial distribution of the photon flux with the intensity from below one photon per channel up to 0∼10 photons per channel with a frame rate from 10 kHz up to 1 MHz.",
keywords = "Si microstrip and pad detectors, X-ray detectors, X-ray diffraction detectors, EXPLOSIONS",
author = "A. Arakcheev and V. Aulchenko and D. Kudashkin and L. Shekhtman and B. Tolochko and V. Zhulanov",
year = "2017",
month = jun,
day = "5",
doi = "10.1088/1748-0221/12/06/C06002",
language = "English",
volume = "12",
journal = "Journal of Instrumentation",
issn = "1748-0221",
publisher = "IOP Publishing Ltd.",
number = "6",

}

RIS

TY - JOUR

T1 - Development of a silicon microstrip detector with single photon sensitivity for fast dynamic diffraction experiments at a synchrotron radiation beam

AU - Arakcheev, A.

AU - Aulchenko, V.

AU - Kudashkin, D.

AU - Shekhtman, L.

AU - Tolochko, B.

AU - Zhulanov, V.

PY - 2017/6/5

Y1 - 2017/6/5

N2 - Time-resolved experiments on the diffraction of synchrotron radiation (SR) from crystalline materials provide information on the evolution of a material structure after a heat, electron beam or plasma interaction with a sample under study. Changes in the material structure happen within a microsecond scale and a detector with corresponding parameters is needed. The SR channel 8 of the VEPP-4M storage ring provides radiation from the 7-pole wiggler that allows to reach several tens photons within one μs from a tungsten crystal for the most intensive diffraction peak. In order to perform experiments that allow to measure the evolution of tungsten crystalline structure under the impact of powerful laser beam, a new detector is developed, that can provide information about the distribution of a scattered SR flux in space and its evolution in time at a microsecond scale. The detector is based on the silicon p-in-n microstrip sensor with DC-coupled metal strips. The sensor contains 1024 30 mm long strips with a 50 μm pitch. 64 strips are bonded to the front-end electronics based on APC128 ASICs. The APC128 ASIC contains 128 channels that consist of a low noise integrator with 32 analogue memory cells each. The integrator equivalent noise charge is about 2000 electrons and thus the signal from individual photons with energy above 40 keV can be observed. The signal can be stored at the analogue memory with 10 MHz rate. The first measurements with the beam scattered from a tungsten crystal with energy near 60 keV demonstrated the capability of this prototype to observe the spatial distribution of the photon flux with the intensity from below one photon per channel up to 0∼10 photons per channel with a frame rate from 10 kHz up to 1 MHz.

AB - Time-resolved experiments on the diffraction of synchrotron radiation (SR) from crystalline materials provide information on the evolution of a material structure after a heat, electron beam or plasma interaction with a sample under study. Changes in the material structure happen within a microsecond scale and a detector with corresponding parameters is needed. The SR channel 8 of the VEPP-4M storage ring provides radiation from the 7-pole wiggler that allows to reach several tens photons within one μs from a tungsten crystal for the most intensive diffraction peak. In order to perform experiments that allow to measure the evolution of tungsten crystalline structure under the impact of powerful laser beam, a new detector is developed, that can provide information about the distribution of a scattered SR flux in space and its evolution in time at a microsecond scale. The detector is based on the silicon p-in-n microstrip sensor with DC-coupled metal strips. The sensor contains 1024 30 mm long strips with a 50 μm pitch. 64 strips are bonded to the front-end electronics based on APC128 ASICs. The APC128 ASIC contains 128 channels that consist of a low noise integrator with 32 analogue memory cells each. The integrator equivalent noise charge is about 2000 electrons and thus the signal from individual photons with energy above 40 keV can be observed. The signal can be stored at the analogue memory with 10 MHz rate. The first measurements with the beam scattered from a tungsten crystal with energy near 60 keV demonstrated the capability of this prototype to observe the spatial distribution of the photon flux with the intensity from below one photon per channel up to 0∼10 photons per channel with a frame rate from 10 kHz up to 1 MHz.

KW - Si microstrip and pad detectors

KW - X-ray detectors

KW - X-ray diffraction detectors

KW - EXPLOSIONS

UR - http://www.scopus.com/inward/record.url?scp=85022322026&partnerID=8YFLogxK

U2 - 10.1088/1748-0221/12/06/C06002

DO - 10.1088/1748-0221/12/06/C06002

M3 - Article

AN - SCOPUS:85022322026

VL - 12

JO - Journal of Instrumentation

JF - Journal of Instrumentation

SN - 1748-0221

IS - 6

M1 - 06002

ER -

ID: 10093028