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Dependence of the Luminescence Properties of Ordered Groups of Ge(Si) Nanoislands on the Parameters of the Pit-Patterned Surface of a Silicon-on-Insulator Substrate. / Smagina, Zh V.; Zinovyev, V. A.; Stepikhova, M. V. et al.

In: Semiconductors, Vol. 56, No. 2, 02.2022, p. 101-106.

Research output: Contribution to journal › Article › peer-review

Harvard

Smagina, ZV, Zinovyev, VA, Stepikhova, MV, Peretokin, AV, Dyakov, SA, Rodyakina, EE, Novikov, AV & Dvurechenskii, AV 2022, 'Dependence of the Luminescence Properties of Ordered Groups of Ge(Si) Nanoislands on the Parameters of the Pit-Patterned Surface of a Silicon-on-Insulator Substrate', Semiconductors, vol. 56, no. 2, pp. 101-106. https://doi.org/10.1134/S1063782622010146

APA

Smagina, Z. V., Zinovyev, V. A., Stepikhova, M. V., Peretokin, A. V., Dyakov, S. A., Rodyakina, E. E., Novikov, A. V., & Dvurechenskii, A. V. (2022). Dependence of the Luminescence Properties of Ordered Groups of Ge(Si) Nanoislands on the Parameters of the Pit-Patterned Surface of a Silicon-on-Insulator Substrate. Semiconductors, 56(2), 101-106. https://doi.org/10.1134/S1063782622010146

Vancouver

Smagina ZV, Zinovyev VA, Stepikhova MV, Peretokin AV, Dyakov SA, Rodyakina EE et al. Dependence of the Luminescence Properties of Ordered Groups of Ge(Si) Nanoislands on the Parameters of the Pit-Patterned Surface of a Silicon-on-Insulator Substrate. Semiconductors. 2022 Feb;56(2):101-106. doi: 10.1134/S1063782622010146

Author

Smagina, Zh V. ; Zinovyev, V. A. ; Stepikhova, M. V. et al. / Dependence of the Luminescence Properties of Ordered Groups of Ge(Si) Nanoislands on the Parameters of the Pit-Patterned Surface of a Silicon-on-Insulator Substrate. In: Semiconductors. 2022 ; Vol. 56, No. 2. pp. 101-106.

BibTeX

@article{07ec15b44f0a406c9756e57ec368101d,
title = "Dependence of the Luminescence Properties of Ordered Groups of Ge(Si) Nanoislands on the Parameters of the Pit-Patterned Surface of a Silicon-on-Insulator Substrate",
abstract = "This paper presents the results of studies of the luminescence properties of structures with Ge(Si) quantum dots (QDs), in which the pit-patterned surface of a silicon-on-insulator substrate serves both for the spatial ordering of QDs and the formation of a two-dimensional photonic crystal. It is shown that by choosing the parameters of the pit-patterned substrate (the diameter of the pits and the period of their location), it is possible to provide a significant increase in the intensity of the QD luminescence signal in the near infrared range. This enhancement is associated with the interaction of spatially ordered QD emission with the modes of a photonic crystal formed by the pattern of pits. The effect of amplification of the luminescence signal is retained up to room temperature.",
keywords = "Ge(Si) nanoislands, luminescence, photonic crystal, quantum dots, spatial ordering",
author = "Smagina, {Zh V.} and Zinovyev, {V. A.} and Stepikhova, {M. V.} and Peretokin, {A. V.} and Dyakov, {S. A.} and Rodyakina, {E. E.} and Novikov, {A. V.} and Dvurechenskii, {A. V.}",
note = "Publisher Copyright: {\textcopyright} 2022, Pleiades Publishing, Ltd.",
year = "2022",
month = feb,
doi = "10.1134/S1063782622010146",
language = "English",
volume = "56",
pages = "101--106",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "PLEIADES PUBLISHING INC",
number = "2",

}

RIS

TY - JOUR

T1 - Dependence of the Luminescence Properties of Ordered Groups of Ge(Si) Nanoislands on the Parameters of the Pit-Patterned Surface of a Silicon-on-Insulator Substrate

AU - Smagina, Zh V.

AU - Zinovyev, V. A.

AU - Stepikhova, M. V.

AU - Peretokin, A. V.

AU - Dyakov, S. A.

AU - Rodyakina, E. E.

AU - Novikov, A. V.

AU - Dvurechenskii, A. V.

N1 - Publisher Copyright: © 2022, Pleiades Publishing, Ltd.

PY - 2022/2

Y1 - 2022/2

N2 - This paper presents the results of studies of the luminescence properties of structures with Ge(Si) quantum dots (QDs), in which the pit-patterned surface of a silicon-on-insulator substrate serves both for the spatial ordering of QDs and the formation of a two-dimensional photonic crystal. It is shown that by choosing the parameters of the pit-patterned substrate (the diameter of the pits and the period of their location), it is possible to provide a significant increase in the intensity of the QD luminescence signal in the near infrared range. This enhancement is associated with the interaction of spatially ordered QD emission with the modes of a photonic crystal formed by the pattern of pits. The effect of amplification of the luminescence signal is retained up to room temperature.

AB - This paper presents the results of studies of the luminescence properties of structures with Ge(Si) quantum dots (QDs), in which the pit-patterned surface of a silicon-on-insulator substrate serves both for the spatial ordering of QDs and the formation of a two-dimensional photonic crystal. It is shown that by choosing the parameters of the pit-patterned substrate (the diameter of the pits and the period of their location), it is possible to provide a significant increase in the intensity of the QD luminescence signal in the near infrared range. This enhancement is associated with the interaction of spatially ordered QD emission with the modes of a photonic crystal formed by the pattern of pits. The effect of amplification of the luminescence signal is retained up to room temperature.

KW - Ge(Si) nanoislands

KW - luminescence

KW - photonic crystal

KW - quantum dots

KW - spatial ordering

UR - http://www.scopus.com/inward/record.url?scp=85129875419&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/de8d9e7f-8f40-3153-964e-3c984fe50829/

U2 - 10.1134/S1063782622010146

DO - 10.1134/S1063782622010146

M3 - Article

AN - SCOPUS:85129875419

VL - 56

SP - 101

EP - 106

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 2

ER -

ID: 36108012