Defects with a negative correlation energy as memory traps in a flash memory. An illusion?

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Defects with a negative correlation energy as memory traps in a flash memory. An illusion? / Gritsenko, V. A.; Gismatulin, A. A.; Temnov, D. E. et al.

In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 333, 11.2026, p. 119704.

Research output: Contribution to journal › Article › peer-review

Harvard

Gritsenko, VA, Gismatulin, AA, Temnov, DE, Volgina, EA & Mahmoodian, MM 2026, 'Defects with a negative correlation energy as memory traps in a flash memory. An illusion?', Materials Science and Engineering B: Solid-State Materials for Advanced Technology, vol. 333, pp. 119704. https://doi.org/10.1016/j.mseb.2026.119704

APA

Gritsenko, V. A., Gismatulin, A. A., Temnov, D. E., Volgina, E. A., & Mahmoodian, M. M. (2026). Defects with a negative correlation energy as memory traps in a flash memory. An illusion? Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 333, 119704. https://doi.org/10.1016/j.mseb.2026.119704

Vancouver

Gritsenko VA, Gismatulin AA, Temnov DE, Volgina EA, Mahmoodian MM. Defects with a negative correlation energy as memory traps in a flash memory. An illusion? Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 2026 Nov;333:119704. doi: 10.1016/j.mseb.2026.119704

Author

Gritsenko, V. A. ; Gismatulin, A. A. ; Temnov, D. E. et al. / Defects with a negative correlation energy as memory traps in a flash memory. An illusion?. In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 2026 ; Vol. 333. pp. 119704.

BibTeX

@article{8c4d2406059545488f416f96658d3e12,

title = "Defects with a negative correlation energy as memory traps in a flash memory. An illusion?",

abstract = "Amorphous silicon nitride (Si3N4) exhibits a memory effect — the ability to localize electrons and holes in traps. Due to this effect, Si3N4 serves as memory medium in modern charge trap flash memory (CTFM). The idea that charged centers with a negative correlation energy act as traps responsible for the memory effect in Si3N4 was and is actively discussed. In this case, the charge transport should be limited by the Coulomb charged trap ionization via the Frenkel mechanism. The charge transport in Si3N4 is not described by the Frenkel effect. This means that the traps are not charged, as suggested by the model of negative correlation energy centers. The charge transport in Si3N4 is described by multiphonon neutral trap ionization. The traps in a Si3N4-based CTFM are neutral diamagnetic Si-Si bonds, the electron and hole localization of which is quantitatively described by the Mott polaron model.",

keywords = "Центр отрицательной корреляционной энергии, Диэлектрик, Перенос заряда, Дефекты, Negative correlation energy center, Dielectric, Charge transport, Defects",

author = "Gritsenko, {V. A.} and Gismatulin, {A. A.} and Temnov, {D. E.} and Volgina, {E. A.} and Mahmoodian, {M. M.}",

note = "V.A. Gritsenko, A.A. Gismatulin, D.E. Temnov, E.A. Volgina, M.M. Mahmoodian, Defects with a negative correlation energy as memory traps in a flash memory. An illusion?, Materials Science and Engineering: B, Volume 333, 2026, 119704, ISSN 0921-5107, https://doi.org/10.1016/j.mseb.2026.119704. This work was supported by the Russian Science Foundation No. 25- 12-00022. The electrophysical measurements were made on the equipment of CKP “VTAN” in the ATRC Department of the NSU.",

year = "2026",

month = nov,

doi = "10.1016/j.mseb.2026.119704",

language = "English",

volume = "333",

pages = "119704",

journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",

issn = "0921-5107",

publisher = "Elsevier Science Publishing Company, Inc.",