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Coulomb repulsion and Wigner glass formation of localized electrons in HfO2. / Gritsenko, V. A.; Mahmoodian, Mehrdad M.; Gismatulin, A. A. et al.

In: Applied Physics Letters, Vol. 129, No. 12, 122903, 21.09.2026.

Research output: Contribution to journal › Article › peer-review

Harvard

Gritsenko, VA, Mahmoodian, MM, Gismatulin, AA, Mahmoodian, MM, Novikov, YN, Temnov, DE, Volgina, EA, Markelova, AK, Aliev, VS & Entin, MV 2026, 'Coulomb repulsion and Wigner glass formation of localized electrons in HfO2', Applied Physics Letters, vol. 129, no. 12, 122903. https://doi.org/10.1063/5.0337207

APA

Gritsenko, V. A., Mahmoodian, M. M., Gismatulin, A. A., Mahmoodian, M. M., Novikov, Y. N., Temnov, D. E., Volgina, E. A., Markelova, A. K., Aliev, V. S., & Entin, M. V. (2026). Coulomb repulsion and Wigner glass formation of localized electrons in HfO2. Applied Physics Letters, 129(12), [122903]. https://doi.org/10.1063/5.0337207

Vancouver

Gritsenko VA, Mahmoodian MM, Gismatulin AA, Mahmoodian MM, Novikov YN, Temnov DE et al. Coulomb repulsion and Wigner glass formation of localized electrons in HfO2. Applied Physics Letters. 2026 Sept 21;129(12):122903. doi: 10.1063/5.0337207

Author

Gritsenko, V. A. ; Mahmoodian, Mehrdad M. ; Gismatulin, A. A. et al. / Coulomb repulsion and Wigner glass formation of localized electrons in HfO2. In: Applied Physics Letters. 2026 ; Vol. 129, No. 12.

BibTeX

@article{60dc6d2320794ad780a88c382e642298,
title = "Coulomb repulsion and Wigner glass formation of localized electrons in HfO2",
abstract = "Hafnium oxide (HfO2) is a key gate insulator in silicon devices. The electron transport in HfO2 is described by a model of phonon-assisted tunneling between neighboring traps. The trap ionization energy obtained from charge transport experiments is 1.25 ± 0.1 eV, which independently agrees, within the experimental accuracy, with the activation energy of 1.25 ± 0.02 eV derived from thermally stimulated depolarization experiments. This paper demonstrates—both experimentally and through Monte Carlo simulations—that the concentration of occupied traps is two orders of magnitude lower than the total concentration of neutral traps in HfO2. This finding indicates Coulomb repulsion between free electrons and localized electrons. Additional numerical simulations show that electrons localized in HfO2 form a short-range ordered structure known as Wigner glass.",
author = "Gritsenko, {V. A.} and Mahmoodian, {Mehrdad M.} and Gismatulin, {A. A.} and Mahmoodian, {M. M.} and Novikov, {Yu N.} and Temnov, {D. E.} and Volgina, {E. A.} and Markelova, {A. K.} and Aliev, {V. Sh} and Entin, {M. V.}",
year = "2026",
month = sep,
day = "21",
doi = "10.1063/5.0337207",
language = "English",
volume = "129",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "12",

}

RIS

TY - JOUR

T1 - Coulomb repulsion and Wigner glass formation of localized electrons in HfO2

AU - Gritsenko, V. A.

AU - Mahmoodian, Mehrdad M.

AU - Gismatulin, A. A.

AU - Mahmoodian, M. M.

AU - Novikov, Yu N.

AU - Temnov, D. E.

AU - Volgina, E. A.

AU - Markelova, A. K.

AU - Aliev, V. Sh

AU - Entin, M. V.

PY - 2026/9/21

Y1 - 2026/9/21

N2 - Hafnium oxide (HfO2) is a key gate insulator in silicon devices. The electron transport in HfO2 is described by a model of phonon-assisted tunneling between neighboring traps. The trap ionization energy obtained from charge transport experiments is 1.25 ± 0.1 eV, which independently agrees, within the experimental accuracy, with the activation energy of 1.25 ± 0.02 eV derived from thermally stimulated depolarization experiments. This paper demonstrates—both experimentally and through Monte Carlo simulations—that the concentration of occupied traps is two orders of magnitude lower than the total concentration of neutral traps in HfO2. This finding indicates Coulomb repulsion between free electrons and localized electrons. Additional numerical simulations show that electrons localized in HfO2 form a short-range ordered structure known as Wigner glass.

AB - Hafnium oxide (HfO2) is a key gate insulator in silicon devices. The electron transport in HfO2 is described by a model of phonon-assisted tunneling between neighboring traps. The trap ionization energy obtained from charge transport experiments is 1.25 ± 0.1 eV, which independently agrees, within the experimental accuracy, with the activation energy of 1.25 ± 0.02 eV derived from thermally stimulated depolarization experiments. This paper demonstrates—both experimentally and through Monte Carlo simulations—that the concentration of occupied traps is two orders of magnitude lower than the total concentration of neutral traps in HfO2. This finding indicates Coulomb repulsion between free electrons and localized electrons. Additional numerical simulations show that electrons localized in HfO2 form a short-range ordered structure known as Wigner glass.

UR - https://www.scopus.com/pages/publications/105052141275

UR - https://www.mendeley.com/catalogue/d097c3e4-d3c5-3488-bdc9-f2e6b07dcd56/

U2 - 10.1063/5.0337207

DO - 10.1063/5.0337207

M3 - Article

VL - 129

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 12

M1 - 122903

ER -

ID: 84332692