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Corrigendum to “Fabrication of polycrystalline silicon thin films by gold-induced crystallization of amorphous silicon suboxide” [Vacuum 192 (2021) 110462](S0042207X21004127)(10.1016/j.vacuum.2021.110462). / Zamchiy, A. O.; Baranov, E. A.; Starinskiy, S. V. et al.

In: Vacuum, Vol. 208, 111713, 02.2023.

Research output: Contribution to journal › Comment/debate › peer-review

Harvard

Zamchiy, AO, Baranov, EA, Starinskiy, SV, Lunev, NA & Merkulova, IE 2023, 'Corrigendum to “Fabrication of polycrystalline silicon thin films by gold-induced crystallization of amorphous silicon suboxide” [Vacuum 192 (2021) 110462](S0042207X21004127)(10.1016/j.vacuum.2021.110462)', Vacuum, vol. 208, 111713. https://doi.org/10.1016/j.vacuum.2022.111713

APA

Zamchiy, A. O., Baranov, E. A., Starinskiy, S. V., Lunev, N. A., & Merkulova, I. E. (2023). Corrigendum to “Fabrication of polycrystalline silicon thin films by gold-induced crystallization of amorphous silicon suboxide” [Vacuum 192 (2021) 110462](S0042207X21004127)(10.1016/j.vacuum.2021.110462). Vacuum, 208, [111713]. https://doi.org/10.1016/j.vacuum.2022.111713

Vancouver

Zamchiy AO, Baranov EA, Starinskiy SV, Lunev NA, Merkulova IE. Corrigendum to “Fabrication of polycrystalline silicon thin films by gold-induced crystallization of amorphous silicon suboxide” [Vacuum 192 (2021) 110462](S0042207X21004127)(10.1016/j.vacuum.2021.110462). Vacuum. 2023 Feb;208:111713. doi: 10.1016/j.vacuum.2022.111713

Author

Zamchiy, A. O. ; Baranov, E. A. ; Starinskiy, S. V. et al. / Corrigendum to “Fabrication of polycrystalline silicon thin films by gold-induced crystallization of amorphous silicon suboxide” [Vacuum 192 (2021) 110462](S0042207X21004127)(10.1016/j.vacuum.2021.110462). In: Vacuum. 2023 ; Vol. 208.

BibTeX

@article{a0ba010c2d494456b2d7dfae270352da,
title = "Corrigendum to “Fabrication of polycrystalline silicon thin films by gold-induced crystallization of amorphous silicon suboxide” [Vacuum 192 (2021) 110462](S0042207X21004127)(10.1016/j.vacuum.2021.110462)",
abstract = "The authors regret < that there is an inaccuracy when specifying the stoichiometry coefficient x of a-SiOx films. The value of 0.4 is indicated in the work which was obtained from the infrared (IR) transmission spectra. More precise measurements performed using X-ray photoelectron spectroscopy (XPS) and energy-dispersive X-ray spectroscopy (EDS) showed that the stoichiometry coefficient x of the initial a-SiOx films is 0.9. In addition, this made it possible to refine the proportionality coefficient used to determine the concentration of bonded oxygen in a-SiOx by Fourier-transform IR spectroscopy. The corrections are as follows: In the text of the article, the chemical formula a-SiO0.4 should appear as a-SiO0.9 >. The authors would like to apologise for any inconvenience caused.",
author = "Zamchiy, {A. O.} and Baranov, {E. A.} and Starinskiy, {S. V.} and Lunev, {N. A.} and Merkulova, {I. E.}",
note = "Publisher Copyright: {\textcopyright} 2022 Elsevier Ltd",
year = "2023",
month = feb,
doi = "10.1016/j.vacuum.2022.111713",
language = "English",
volume = "208",
journal = "Vacuum",
issn = "0042-207X",
publisher = "Elsevier Ltd",

}

RIS

TY - JOUR

T1 - Corrigendum to “Fabrication of polycrystalline silicon thin films by gold-induced crystallization of amorphous silicon suboxide” [Vacuum 192 (2021) 110462](S0042207X21004127)(10.1016/j.vacuum.2021.110462)

AU - Zamchiy, A. O.

AU - Baranov, E. A.

AU - Starinskiy, S. V.

AU - Lunev, N. A.

AU - Merkulova, I. E.

N1 - Publisher Copyright: © 2022 Elsevier Ltd

PY - 2023/2

Y1 - 2023/2

N2 - The authors regret < that there is an inaccuracy when specifying the stoichiometry coefficient x of a-SiOx films. The value of 0.4 is indicated in the work which was obtained from the infrared (IR) transmission spectra. More precise measurements performed using X-ray photoelectron spectroscopy (XPS) and energy-dispersive X-ray spectroscopy (EDS) showed that the stoichiometry coefficient x of the initial a-SiOx films is 0.9. In addition, this made it possible to refine the proportionality coefficient used to determine the concentration of bonded oxygen in a-SiOx by Fourier-transform IR spectroscopy. The corrections are as follows: In the text of the article, the chemical formula a-SiO0.4 should appear as a-SiO0.9 >. The authors would like to apologise for any inconvenience caused.

AB - The authors regret < that there is an inaccuracy when specifying the stoichiometry coefficient x of a-SiOx films. The value of 0.4 is indicated in the work which was obtained from the infrared (IR) transmission spectra. More precise measurements performed using X-ray photoelectron spectroscopy (XPS) and energy-dispersive X-ray spectroscopy (EDS) showed that the stoichiometry coefficient x of the initial a-SiOx films is 0.9. In addition, this made it possible to refine the proportionality coefficient used to determine the concentration of bonded oxygen in a-SiOx by Fourier-transform IR spectroscopy. The corrections are as follows: In the text of the article, the chemical formula a-SiO0.4 should appear as a-SiO0.9 >. The authors would like to apologise for any inconvenience caused.

UR - http://www.scopus.com/inward/record.url?scp=85143759421&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/8ffefcce-ff15-3be6-acb3-b68aeeed40ff/

U2 - 10.1016/j.vacuum.2022.111713

DO - 10.1016/j.vacuum.2022.111713

M3 - Comment/debate

AN - SCOPUS:85143759421

VL - 208

JO - Vacuum

JF - Vacuum

SN - 0042-207X

M1 - 111713

ER -

ID: 40867336