Research output: Contribution to journal › Article › peer-review
Characterization of Crystal Perfection in the Layers of (013)HgCdTe/CdTe/ZnTe/GaAs Heterostructures via the Second Harmonic Generation Method. / Dvoretskii, S. A.; Stupak, M. F.; Mikhailov, N. N. et al.
In: Optoelectronics, Instrumentation and Data Processing, Vol. 57, No. 5, 3, 09.2021, p. 458-467.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Characterization of Crystal Perfection in the Layers of (013)HgCdTe/CdTe/ZnTe/GaAs Heterostructures via the Second Harmonic Generation Method
AU - Dvoretskii, S. A.
AU - Stupak, M. F.
AU - Mikhailov, N. N.
AU - Makarov, S. N.
AU - Elesin, A. G.
AU - Verkhoglyad, A. G.
N1 - Funding Information: This study was financially supported in part by the Russian Foundation for Basic Research (project no. 18-29-20053) and the Ministry of Science and Higher Education of the Russian Federation (state registration no. AAAA-A20-120102190007-5). Publisher Copyright: © 2021, Allerton Press, Inc.
PY - 2021/9
Y1 - 2021/9
N2 - The processes of second harmonic generation in the CdTe and Hg1-xCdxTe layers and GaAs substrate of the Hg1-xCdxTe/CdTe/ZnTe/GaAs heterostructure of orientation (013) have been analyzed. The azimuthal dependence of second harmonic signals have been measured in comparison with the calculated data obtained via the numerical simulation of an ideal crystal of specified orientation near cut (013). It has been shown that the substrate and epitaxial layers after growing have an orientation plane reversal of +8 and -3 angular degrees from ideal plane (013) for the GaAs substrates and up to 8 angular degrees from the substrate orientation for the MCT layers with a weak dependence on the composition along the thickness. The observed orientation plane reversals depend on the mismatch between the lattice parameters of conjugated materials in the Hg1-xCdxTe/CdTe/ZnTe/GaAs heterostructure. A detected increase of noise at the minima of the azimuthal dependence of a second harmonic signal in the Hg1-xCdxTeTe layers is caused by the presence of disoriented microareas.
AB - The processes of second harmonic generation in the CdTe and Hg1-xCdxTe layers and GaAs substrate of the Hg1-xCdxTe/CdTe/ZnTe/GaAs heterostructure of orientation (013) have been analyzed. The azimuthal dependence of second harmonic signals have been measured in comparison with the calculated data obtained via the numerical simulation of an ideal crystal of specified orientation near cut (013). It has been shown that the substrate and epitaxial layers after growing have an orientation plane reversal of +8 and -3 angular degrees from ideal plane (013) for the GaAs substrates and up to 8 angular degrees from the substrate orientation for the MCT layers with a weak dependence on the composition along the thickness. The observed orientation plane reversals depend on the mismatch between the lattice parameters of conjugated materials in the Hg1-xCdxTe/CdTe/ZnTe/GaAs heterostructure. A detected increase of noise at the minima of the azimuthal dependence of a second harmonic signal in the Hg1-xCdxTeTe layers is caused by the presence of disoriented microareas.
KW - azimuthal angular dependencies
KW - CdTe
KW - GaAs
KW - heterostructures
KW - HgCdTe
KW - microparticles
KW - nonlinear susceptibility tensor
KW - reversal
KW - second harmonic
KW - sphalerite class crystals
KW - Hg1-xCdxTe
UR - http://www.scopus.com/inward/record.url?scp=85126827693&partnerID=8YFLogxK
UR - https://www.elibrary.ru/item.asp?id=48194802
UR - https://www.mendeley.com/catalogue/59af3bb2-b70e-379c-a9b6-3382f6d7806b/
U2 - 10.3103/S8756699021050058
DO - 10.3103/S8756699021050058
M3 - Article
AN - SCOPUS:85126827693
VL - 57
SP - 458
EP - 467
JO - Optoelectronics, Instrumentation and Data Processing
JF - Optoelectronics, Instrumentation and Data Processing
SN - 8756-6990
IS - 5
M1 - 3
ER -
ID: 35770781