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Broadband Semiconductor Mirrors with a Small Relaxation Time for Passive Mode-Locking of NIR Lasers. / Rubtsova, N. N.; Borisov, G. M.; Gol’dort, V. G. et al.

In: Optoelectronics, Instrumentation and Data Processing, Vol. 55, No. 5, 01.09.2019, p. 437-440.

Research output: Contribution to journal › Article › peer-review

Harvard

Rubtsova, NN, Borisov, GM, Gol’dort, VG, Kovalyov, AA, Ledovskikh, DV, Preobrazhenskii, VV, Putyato, MA & Semyagin, BR 2019, 'Broadband Semiconductor Mirrors with a Small Relaxation Time for Passive Mode-Locking of NIR Lasers', Optoelectronics, Instrumentation and Data Processing, vol. 55, no. 5, pp. 437-440. https://doi.org/10.3103/S8756699019050030

APA

Rubtsova, N. N., Borisov, G. M., Gol’dort, V. G., Kovalyov, A. A., Ledovskikh, D. V., Preobrazhenskii, V. V., Putyato, M. A., & Semyagin, B. R. (2019). Broadband Semiconductor Mirrors with a Small Relaxation Time for Passive Mode-Locking of NIR Lasers. Optoelectronics, Instrumentation and Data Processing, 55(5), 437-440. https://doi.org/10.3103/S8756699019050030

Vancouver

Rubtsova NN, Borisov GM, Gol’dort VG, Kovalyov AA, Ledovskikh DV, Preobrazhenskii VV et al. Broadband Semiconductor Mirrors with a Small Relaxation Time for Passive Mode-Locking of NIR Lasers. Optoelectronics, Instrumentation and Data Processing. 2019 Sept 1;55(5):437-440. doi: 10.3103/S8756699019050030

Author

Rubtsova, N. N. ; Borisov, G. M. ; Gol’dort, V. G. et al. / Broadband Semiconductor Mirrors with a Small Relaxation Time for Passive Mode-Locking of NIR Lasers. In: Optoelectronics, Instrumentation and Data Processing. 2019 ; Vol. 55, No. 5. pp. 437-440.

BibTeX

@article{ea4765763d8c4df997472246b62a538d,
title = "Broadband Semiconductor Mirrors with a Small Relaxation Time for Passive Mode-Locking of NIR Lasers",
abstract = "Two types of mirror structures with saturable absorption are under consideration: monolithic mirrors grown from semiconductor materials and mirrors with a dielectric reflector, with quantum well containing semiconductor structures transferred to the dielectric. Both types of mirrors manifest high reflectivity in the NIR range of the spectrum: the table width is about 100 nm for semiconductor reflectors and more than 200 nm for dielectric reflectors. It is shown that a maximum depth of absorption modulation from 1 to 40% is possible. The recovery time of the saturable absorber (2 ps) makes these mirrors significantly fit for using in lasers with a pulse repetition rate of 1 GHz.",
keywords = "passive mode locking of lasers, quantum well, semiconductor mirrors with saturable absorption",
author = "Rubtsova, {N. N.} and Borisov, {G. M.} and Gol{\textquoteright}dort, {V. G.} and Kovalyov, {A. A.} and Ledovskikh, {D. V.} and Preobrazhenskii, {V. V.} and Putyato, {M. A.} and Semyagin, {B. R.}",
year = "2019",
month = sep,
day = "1",
doi = "10.3103/S8756699019050030",
language = "English",
volume = "55",
pages = "437--440",
journal = "Optoelectronics, Instrumentation and Data Processing",
issn = "8756-6990",
publisher = "Allerton Press Inc.",
number = "5",

}

RIS

TY - JOUR

T1 - Broadband Semiconductor Mirrors with a Small Relaxation Time for Passive Mode-Locking of NIR Lasers

AU - Rubtsova, N. N.

AU - Borisov, G. M.

AU - Gol’dort, V. G.

AU - Kovalyov, A. A.

AU - Ledovskikh, D. V.

AU - Preobrazhenskii, V. V.

AU - Putyato, M. A.

AU - Semyagin, B. R.

PY - 2019/9/1

Y1 - 2019/9/1

N2 - Two types of mirror structures with saturable absorption are under consideration: monolithic mirrors grown from semiconductor materials and mirrors with a dielectric reflector, with quantum well containing semiconductor structures transferred to the dielectric. Both types of mirrors manifest high reflectivity in the NIR range of the spectrum: the table width is about 100 nm for semiconductor reflectors and more than 200 nm for dielectric reflectors. It is shown that a maximum depth of absorption modulation from 1 to 40% is possible. The recovery time of the saturable absorber (2 ps) makes these mirrors significantly fit for using in lasers with a pulse repetition rate of 1 GHz.

AB - Two types of mirror structures with saturable absorption are under consideration: monolithic mirrors grown from semiconductor materials and mirrors with a dielectric reflector, with quantum well containing semiconductor structures transferred to the dielectric. Both types of mirrors manifest high reflectivity in the NIR range of the spectrum: the table width is about 100 nm for semiconductor reflectors and more than 200 nm for dielectric reflectors. It is shown that a maximum depth of absorption modulation from 1 to 40% is possible. The recovery time of the saturable absorber (2 ps) makes these mirrors significantly fit for using in lasers with a pulse repetition rate of 1 GHz.

KW - passive mode locking of lasers

KW - quantum well

KW - semiconductor mirrors with saturable absorption

UR - http://www.scopus.com/inward/record.url?scp=85078324855&partnerID=8YFLogxK

U2 - 10.3103/S8756699019050030

DO - 10.3103/S8756699019050030

M3 - Article

AN - SCOPUS:85078324855

VL - 55

SP - 437

EP - 440

JO - Optoelectronics, Instrumentation and Data Processing

JF - Optoelectronics, Instrumentation and Data Processing

SN - 8756-6990

IS - 5

ER -

ID: 23261830