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Broadband Antireflection Coatings Composed of Subwavelength-Sized SiGe Particles. / Utkin, D. E.; Tsarev, A. V.; Utkin, E. N. et al.

In: Optoelectronics, Instrumentation and Data Processing, Vol. 57, No. 5, 01.09.2021, p. 494-504.

Research output: Contribution to journal › Article › peer-review

Harvard

Utkin, DE, Tsarev, AV, Utkin, EN, Latyshev, AV & Shklyaev, AA 2021, 'Broadband Antireflection Coatings Composed of Subwavelength-Sized SiGe Particles', Optoelectronics, Instrumentation and Data Processing, vol. 57, no. 5, pp. 494-504. https://doi.org/10.3103/S8756699021050162

APA

Utkin, D. E., Tsarev, A. V., Utkin, E. N., Latyshev, A. V., & Shklyaev, A. A. (2021). Broadband Antireflection Coatings Composed of Subwavelength-Sized SiGe Particles. Optoelectronics, Instrumentation and Data Processing, 57(5), 494-504. https://doi.org/10.3103/S8756699021050162

Vancouver

Utkin DE, Tsarev AV, Utkin EN, Latyshev AV, Shklyaev AA. Broadband Antireflection Coatings Composed of Subwavelength-Sized SiGe Particles. Optoelectronics, Instrumentation and Data Processing. 2021 Sept 1;57(5):494-504. doi: 10.3103/S8756699021050162

Author

Utkin, D. E. ; Tsarev, A. V. ; Utkin, E. N. et al. / Broadband Antireflection Coatings Composed of Subwavelength-Sized SiGe Particles. In: Optoelectronics, Instrumentation and Data Processing. 2021 ; Vol. 57, No. 5. pp. 494-504.

BibTeX

@article{5e7f3d6c2d404054b02cef2a2a3010c1,
title = "Broadband Antireflection Coatings Composed of Subwavelength-Sized SiGe Particles",
abstract = "Antireflection properties of subwavelength-sized dielectric SiGe particles grown on Si(100) substrates using the dewetting phenomenon are studied. The average particle size has been set by the amount of deposited Ge in the range from 0.2 to 1.4 μm. The studied excitation of magnetic and electric resonances in dielectric SiGe particles has led to a decrease in reflection by approximately 60% depending on the average particle size compared to the reflection of the Si surface not covered with particles. The particle size distribution has provided antireflection properties over a wide spectral range, in which small particles created a stronger antireflection effect than large ones. Model calculations have shown that, for particles on the substrate, the efficiency of excitation of magnetic and electric resonances has a strong dependence on the ratio of particle height to particle base size.",
keywords = "antireflection properties, FDTD method, metasurfaces, Mie resonances, numerical simulation, SiGe particles on Si",
author = "Utkin, {D. E.} and Tsarev, {A. V.} and Utkin, {E. N.} and Latyshev, {A. V.} and Shklyaev, {A. A.}",
note = "This work was supported by the Russian Science Foundation, project no. 19-72-30023. The experiments were carried out using the equipment of the CKP {"}NANOSTRUKTURY{"} of the Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences and CKP {"}VTAN{"} (ATRC) of the NSU Physics Department.",
year = "2021",
month = sep,
day = "1",
doi = "10.3103/S8756699021050162",
language = "English",
volume = "57",
pages = "494--504",
journal = "Optoelectronics, Instrumentation and Data Processing",
issn = "8756-6990",
publisher = "Allerton Press Inc.",
number = "5",

}

RIS

TY - JOUR

T1 - Broadband Antireflection Coatings Composed of Subwavelength-Sized SiGe Particles

AU - Utkin, D. E.

AU - Tsarev, A. V.

AU - Utkin, E. N.

AU - Latyshev, A. V.

AU - Shklyaev, A. A.

N1 - This work was supported by the Russian Science Foundation, project no. 19-72-30023. The experiments were carried out using the equipment of the CKP "NANOSTRUKTURY" of the Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences and CKP "VTAN" (ATRC) of the NSU Physics Department.

PY - 2021/9/1

Y1 - 2021/9/1

N2 - Antireflection properties of subwavelength-sized dielectric SiGe particles grown on Si(100) substrates using the dewetting phenomenon are studied. The average particle size has been set by the amount of deposited Ge in the range from 0.2 to 1.4 μm. The studied excitation of magnetic and electric resonances in dielectric SiGe particles has led to a decrease in reflection by approximately 60% depending on the average particle size compared to the reflection of the Si surface not covered with particles. The particle size distribution has provided antireflection properties over a wide spectral range, in which small particles created a stronger antireflection effect than large ones. Model calculations have shown that, for particles on the substrate, the efficiency of excitation of magnetic and electric resonances has a strong dependence on the ratio of particle height to particle base size.

AB - Antireflection properties of subwavelength-sized dielectric SiGe particles grown on Si(100) substrates using the dewetting phenomenon are studied. The average particle size has been set by the amount of deposited Ge in the range from 0.2 to 1.4 μm. The studied excitation of magnetic and electric resonances in dielectric SiGe particles has led to a decrease in reflection by approximately 60% depending on the average particle size compared to the reflection of the Si surface not covered with particles. The particle size distribution has provided antireflection properties over a wide spectral range, in which small particles created a stronger antireflection effect than large ones. Model calculations have shown that, for particles on the substrate, the efficiency of excitation of magnetic and electric resonances has a strong dependence on the ratio of particle height to particle base size.

KW - antireflection properties

KW - FDTD method

KW - metasurfaces

KW - Mie resonances

KW - numerical simulation

KW - SiGe particles on Si

UR - http://www.scopus.com/inward/record.url?scp=85126749071&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/b8006de4-9147-3c99-aa26-860ffebed345/

U2 - 10.3103/S8756699021050162

DO - 10.3103/S8756699021050162

M3 - Article

AN - SCOPUS:85126749071

VL - 57

SP - 494

EP - 504

JO - Optoelectronics, Instrumentation and Data Processing

JF - Optoelectronics, Instrumentation and Data Processing

SN - 8756-6990

IS - 5

ER -

ID: 35766132