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Bound State of an Electron in a MOS Structure Due to the Spin–Orbit Interaction. / Mahmoodian, M. M.; Chaplik, A. V.

In: Journal of Experimental and Theoretical Physics, Vol. 127, No. 6, 01.12.2018, p. 1130-1135.

Research output: Contribution to journal › Article › peer-review

Harvard

Mahmoodian, MM & Chaplik, AV 2018, 'Bound State of an Electron in a MOS Structure Due to the Spin–Orbit Interaction', Journal of Experimental and Theoretical Physics, vol. 127, no. 6, pp. 1130-1135. https://doi.org/10.1134/S1063776118120075

APA

Mahmoodian, M. M., & Chaplik, A. V. (2018). Bound State of an Electron in a MOS Structure Due to the Spin–Orbit Interaction. Journal of Experimental and Theoretical Physics, 127(6), 1130-1135. https://doi.org/10.1134/S1063776118120075

Vancouver

Mahmoodian MM, Chaplik AV. Bound State of an Electron in a MOS Structure Due to the Spin–Orbit Interaction. Journal of Experimental and Theoretical Physics. 2018 Dec 1;127(6):1130-1135. doi: 10.1134/S1063776118120075

Author

Mahmoodian, M. M. ; Chaplik, A. V. / Bound State of an Electron in a MOS Structure Due to the Spin–Orbit Interaction. In: Journal of Experimental and Theoretical Physics. 2018 ; Vol. 127, No. 6. pp. 1130-1135.

BibTeX

@article{04950c3ac40a4da09b8b38e65db1a931,
title = "Bound State of an Electron in a MOS Structure Due to the Spin–Orbit Interaction",
abstract = "It is shown that two electrons situated in a quantum well near a metallic electrode are attracted to each other due to the Bychkov–Rashba spin–orbit interaction (SOI) and electrostatic image forces. For quite accessible values of the characteristic parameters of the system, the effective attraction due to the SOI dominates over the Coulomb repulsion, and the formation of a bielectron becomes possible. The theory of the effect is especially simple and clear in the case of a quantum wire. The binding energy of the electron pair significantly increases under the application of a gate voltage of appropriate polarity.",
author = "Mahmoodian, {M. M.} and Chaplik, {A. V.}",
year = "2018",
month = dec,
day = "1",
doi = "10.1134/S1063776118120075",
language = "English",
volume = "127",
pages = "1130--1135",
journal = "Journal of Experimental and Theoretical Physics",
issn = "1063-7761",
publisher = "Maik Nauka-Interperiodica Publishing",
number = "6",

}

RIS

TY - JOUR

T1 - Bound State of an Electron in a MOS Structure Due to the Spin–Orbit Interaction

AU - Mahmoodian, M. M.

AU - Chaplik, A. V.

PY - 2018/12/1

Y1 - 2018/12/1

N2 - It is shown that two electrons situated in a quantum well near a metallic electrode are attracted to each other due to the Bychkov–Rashba spin–orbit interaction (SOI) and electrostatic image forces. For quite accessible values of the characteristic parameters of the system, the effective attraction due to the SOI dominates over the Coulomb repulsion, and the formation of a bielectron becomes possible. The theory of the effect is especially simple and clear in the case of a quantum wire. The binding energy of the electron pair significantly increases under the application of a gate voltage of appropriate polarity.

AB - It is shown that two electrons situated in a quantum well near a metallic electrode are attracted to each other due to the Bychkov–Rashba spin–orbit interaction (SOI) and electrostatic image forces. For quite accessible values of the characteristic parameters of the system, the effective attraction due to the SOI dominates over the Coulomb repulsion, and the formation of a bielectron becomes possible. The theory of the effect is especially simple and clear in the case of a quantum wire. The binding energy of the electron pair significantly increases under the application of a gate voltage of appropriate polarity.

UR - http://www.scopus.com/inward/record.url?scp=85061990774&partnerID=8YFLogxK

U2 - 10.1134/S1063776118120075

DO - 10.1134/S1063776118120075

M3 - Article

AN - SCOPUS:85061990774

VL - 127

SP - 1130

EP - 1135

JO - Journal of Experimental and Theoretical Physics

JF - Journal of Experimental and Theoretical Physics

SN - 1063-7761

IS - 6

ER -

ID: 18626748