Blocking of dislocation propagation by faceted solid liquid interface during Ge crystal growth by the low thermal gradient Czochralski technique › Research Explorer

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Blocking of dislocation propagation by faceted solid liquid interface during Ge crystal growth by the low thermal gradient Czochralski technique

Research output: Contribution to journal › Article › peer-review

Лаборатория функциональных материалов ФФ

DOI

https://doi.org/10.1016/j.jcrysgro.2019.125375
Final published version

P. V. Kasimkin
A. F. Kurus
V. N. Shlegel
Y. V. Vasiliev
O. I. Podkopaev

Original language	English
Article number	125375
Number of pages	6
Journal	Journal of Crystal Growth
Volume	531
DOIs	https://doi.org/10.1016/j.jcrysgro.2019.125375
Publication status	Published - 1 Feb 2020

Research areas

A1. Computer simulation, A1. Defects, A2. Czochralski method, A2. Growth from melt, A2. LTG Cz, B2. Semiconducting germanium, LTG Cz, Czochralski method, Growth from melt, Defects Computer simulation, Semiconducting germanium

OECD FOS+WOS

1.04.FI CRYSTALLOGRAPHY
2.05 MATERIALS ENGINEERING
1.03 PHYSICAL SCIENCES AND ASTRONOMY

ID: 23057088