Research output: Contribution to journal › Article › peer-review
Barrier characteristics and interface properties of Au/Ti/n-InAlAs Schottky contacts. / Chistokhin, I. B.; Aksenov, M. S.; Valisheva, N. A. et al.
In: Materials Science in Semiconductor Processing, Vol. 74, 01.02.2018, p. 193-198.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Barrier characteristics and interface properties of Au/Ti/n-InAlAs Schottky contacts
AU - Chistokhin, I. B.
AU - Aksenov, M. S.
AU - Valisheva, N. A.
AU - Dmitriev, D. V.
AU - Kovchavtsev, A. P.
AU - Gutakovskii, A. K.
AU - Prosvirin, I. P.
AU - Zhuravlev, K. S.
N1 - Publisher Copyright: © 2017 Elsevier Ltd
PY - 2018/2/1
Y1 - 2018/2/1
N2 - The InAlAs surface morphology (AFM), chemical composition (XPS) and the Ti/InAlAs interface structure (HREM), during the Au/Ti/n-In0.52Al0.48As/InP(001) mesa-structure Schottky barrier formation, were studied. The current-voltage (I-V) dependences analysis of the formed Schottky barrier in the temperature range of 100–380 K was carried out. It was shown that the I-V dependences are well described by the thermionic emission theory at temperatures above 200 K with the ideality factor and the barrier height close to 1.09 and 0.7 eV, respectively. At temperatures below 200 K, the I-V behavior is attributed to the Schottky barrier anomalies, which are explained by the existence of nanometer-sized patches with a low barrier height having a Gaussian distribution (Tung model). According to this model, the temperature dependences of the barrier height and ideality factor were described with the following parameters: the homogeneous barrier height of 0.88 eV and standard deviation of 10−4 cm2/3V1/3. In the analysis of the modified Richardson plot, the Richardson constant (10.7 Acm−2 K−2) and the area fraction (24%), occupied by the patches with a low barrier height and diameter ~80 nm, were calculated. The patches appearance is explained by the presence of the spikes detected on the InAlAs surface by the AFM method.
AB - The InAlAs surface morphology (AFM), chemical composition (XPS) and the Ti/InAlAs interface structure (HREM), during the Au/Ti/n-In0.52Al0.48As/InP(001) mesa-structure Schottky barrier formation, were studied. The current-voltage (I-V) dependences analysis of the formed Schottky barrier in the temperature range of 100–380 K was carried out. It was shown that the I-V dependences are well described by the thermionic emission theory at temperatures above 200 K with the ideality factor and the barrier height close to 1.09 and 0.7 eV, respectively. At temperatures below 200 K, the I-V behavior is attributed to the Schottky barrier anomalies, which are explained by the existence of nanometer-sized patches with a low barrier height having a Gaussian distribution (Tung model). According to this model, the temperature dependences of the barrier height and ideality factor were described with the following parameters: the homogeneous barrier height of 0.88 eV and standard deviation of 10−4 cm2/3V1/3. In the analysis of the modified Richardson plot, the Richardson constant (10.7 Acm−2 K−2) and the area fraction (24%), occupied by the patches with a low barrier height and diameter ~80 nm, were calculated. The patches appearance is explained by the presence of the spikes detected on the InAlAs surface by the AFM method.
KW - ELECTRON-TRANSPORT
KW - N-TYPE
KW - DIODES
UR - http://www.scopus.com/inward/record.url?scp=85032368597&partnerID=8YFLogxK
U2 - 10.1016/j.mssp.2017.10.014
DO - 10.1016/j.mssp.2017.10.014
M3 - Article
AN - SCOPUS:85032368597
VL - 74
SP - 193
EP - 198
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
SN - 1369-8001
ER -
ID: 9161139