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Band structure of a HgTe-based three-dimensional topological insulator. / Gospodarič, J.; Dziom, V.; Shuvaev, A. et al.

In: Physical Review B, Vol. 102, No. 11, 115113, 09.2020.

Research output: Contribution to journal › Article › peer-review

Harvard

Gospodarič, J, Dziom, V, Shuvaev, A, Dobretsova, AA, Mikhailov, NN, Kvon, ZD, Novik, EG & Pimenov, A 2020, 'Band structure of a HgTe-based three-dimensional topological insulator', Physical Review B, vol. 102, no. 11, 115113. https://doi.org/10.1103/PhysRevB.102.115113

APA

Gospodarič, J., Dziom, V., Shuvaev, A., Dobretsova, A. A., Mikhailov, N. N., Kvon, Z. D., Novik, E. G., & Pimenov, A. (2020). Band structure of a HgTe-based three-dimensional topological insulator. Physical Review B, 102(11), [115113]. https://doi.org/10.1103/PhysRevB.102.115113

Vancouver

Gospodarič J, Dziom V, Shuvaev A, Dobretsova AA, Mikhailov NN, Kvon ZD et al. Band structure of a HgTe-based three-dimensional topological insulator. Physical Review B. 2020 Sept;102(11):115113. doi: 10.1103/PhysRevB.102.115113

Author

Gospodarič, J. ; Dziom, V. ; Shuvaev, A. et al. / Band structure of a HgTe-based three-dimensional topological insulator. In: Physical Review B. 2020 ; Vol. 102, No. 11.

BibTeX

@article{8cb3f8ea992748cba496916695b30a6b,
title = "Band structure of a HgTe-based three-dimensional topological insulator",
abstract = "From the analysis of the cyclotron resonance, we experimentally obtain the band structure of the three-dimensional topological insulator based on a HgTe thin film. Top gating was used to shift the Fermi level in the film, allowing us to detect separate resonance modes corresponding to the surface states at two opposite film interfaces, the bulk conduction band, and the valence band. The experimental band structure agrees reasonably well with the predictions of the k·p model. Due to the strong hybridization of the surface and bulk bands, the dispersion of the surface states is close to parabolic in the broad range of the electron energies.",
keywords = "DIRAC FERMIONS, QUANTUM",
author = "J. Gospodari{\v c} and V. Dziom and A. Shuvaev and Dobretsova, {A. A.} and Mikhailov, {N. N.} and Kvon, {Z. D.} and Novik, {E. G.} and A. Pimenov",
year = "2020",
month = sep,
doi = "10.1103/PhysRevB.102.115113",
language = "English",
volume = "102",
journal = "Physical Review B",
issn = "2469-9950",
publisher = "American Physical Society",
number = "11",

}

RIS

TY - JOUR

T1 - Band structure of a HgTe-based three-dimensional topological insulator

AU - Gospodarič, J.

AU - Dziom, V.

AU - Shuvaev, A.

AU - Dobretsova, A. A.

AU - Mikhailov, N. N.

AU - Kvon, Z. D.

AU - Novik, E. G.

AU - Pimenov, A.

PY - 2020/9

Y1 - 2020/9

N2 - From the analysis of the cyclotron resonance, we experimentally obtain the band structure of the three-dimensional topological insulator based on a HgTe thin film. Top gating was used to shift the Fermi level in the film, allowing us to detect separate resonance modes corresponding to the surface states at two opposite film interfaces, the bulk conduction band, and the valence band. The experimental band structure agrees reasonably well with the predictions of the k·p model. Due to the strong hybridization of the surface and bulk bands, the dispersion of the surface states is close to parabolic in the broad range of the electron energies.

AB - From the analysis of the cyclotron resonance, we experimentally obtain the band structure of the three-dimensional topological insulator based on a HgTe thin film. Top gating was used to shift the Fermi level in the film, allowing us to detect separate resonance modes corresponding to the surface states at two opposite film interfaces, the bulk conduction band, and the valence band. The experimental band structure agrees reasonably well with the predictions of the k·p model. Due to the strong hybridization of the surface and bulk bands, the dispersion of the surface states is close to parabolic in the broad range of the electron energies.

KW - DIRAC FERMIONS

KW - QUANTUM

UR - http://www.scopus.com/inward/record.url?scp=85093531233&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.102.115113

DO - 10.1103/PhysRevB.102.115113

M3 - Article

AN - SCOPUS:85093531233

VL - 102

JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

IS - 11

M1 - 115113

ER -

ID: 25679440