TY - JOUR

T1 - Band gap opening in the BiSbTeSe2 topological surface state induced by ferromagnetic surface reordering

AU - Kaveev, A. K.

AU - Suturin, S. M.

AU - Golyashov, V. A.

AU - Kokh, K. A.

AU - Eremeev, S. V.

AU - Estyunin, D. A.

AU - Shikin, A. M.

AU - Okotrub, A. V.

AU - Lavrov, A. N.

AU - Schwier, E. F.

AU - Tereshchenko, O. E.

N1 - Funding Information: This work was supported by Russian Science Foundation (Grant No. 18-12-00062 in part of the photoemission measurements and Grant No. 18-12-00169-p in part of the electronic band structure calculations) and by Russian Foundation for Basic Research (Grants No. 18-29-12094, No. 21-52-12024, and No. 19-29-12061). The ARPES measurements at HiSOR were performed with the approval of the Proposal Assessing Committee (Proposals No. 19AG016 and No. 19AG050). D.A.E. and A.M.S. acknowledge support from the Saint-Petersburg State University (Grant No. 73028629). The calculations were conducted using the equipment of Shared Resource Center “Far Eastern Computing Resource” IACP FEB RAS. Publisher Copyright: © 2021 American Physical Society.

PY - 2021/12

Y1 - 2021/12

N2 - Introducing magnetic exchange interaction into topological insulators is known to break the time-reversal symmetry and to open a gap at the Dirac point in the otherwise gapless topological surface states. This allows various novel topological quantum phenomena to be attained, including the quantum anomalous Hall effect and can lead to the emergence of the axion insulator phase. Among the different approaches, magnetic doping is an effective, but still experimentally challenging pathway to provide the magnetic exchange interaction. Here we demonstrate that epitaxial deposition of Co and Mn magnetic atoms onto the (0001) surface of the BiSbTeSe2 topological insulator with a coverage between 0.6 and 3 atoms per surface cell performed in a finely tuned temperature range of 300°-330°C leads to the substitution of pnictogen atoms in the surface layer with magnetic atoms and to the formation of a two-dimensional magnetic phase with out-of-plane magnetization as proved by SQUID magnetometry. This magnetic layer is responsible for the appearance of a gap in the Dirac surface state as revealed by laser-based microfocused angle-resolved photoelectron spectroscopy. Our measurements have shown that the gap exists within the temperature range of 15-100 K, where the out-of-plane magnetization persists. The presented experimental results are supported by relativistic ab initio calculations.

AB - Introducing magnetic exchange interaction into topological insulators is known to break the time-reversal symmetry and to open a gap at the Dirac point in the otherwise gapless topological surface states. This allows various novel topological quantum phenomena to be attained, including the quantum anomalous Hall effect and can lead to the emergence of the axion insulator phase. Among the different approaches, magnetic doping is an effective, but still experimentally challenging pathway to provide the magnetic exchange interaction. Here we demonstrate that epitaxial deposition of Co and Mn magnetic atoms onto the (0001) surface of the BiSbTeSe2 topological insulator with a coverage between 0.6 and 3 atoms per surface cell performed in a finely tuned temperature range of 300°-330°C leads to the substitution of pnictogen atoms in the surface layer with magnetic atoms and to the formation of a two-dimensional magnetic phase with out-of-plane magnetization as proved by SQUID magnetometry. This magnetic layer is responsible for the appearance of a gap in the Dirac surface state as revealed by laser-based microfocused angle-resolved photoelectron spectroscopy. Our measurements have shown that the gap exists within the temperature range of 15-100 K, where the out-of-plane magnetization persists. The presented experimental results are supported by relativistic ab initio calculations.

UR - http://www.scopus.com/inward/record.url?scp=85122544842&partnerID=8YFLogxK

U2 - 10.1103/PhysRevMaterials.5.124204

DO - 10.1103/PhysRevMaterials.5.124204

M3 - Article

AN - SCOPUS:85122544842

VL - 5

JO - Physical Review Materials

JF - Physical Review Materials

SN - 2475-9953

IS - 12

M1 - 124204

ER -