Standard

Asymmetry of anticrossing between atomic steps on metal and semiconductor surfaces. / Khoroshilov, V. S.; Kazantsev, D. M.; Alperovich, V. L. et al.

In: Journal of Physics: Conference Series, Vol. 2227, No. 1, 012008, 28.03.2022.

Research output: Contribution to journal › Conference article › peer-review

Harvard

Khoroshilov, VS, Kazantsev, DM, Alperovich, VL, Coupeau, C & Drouet, M 2022, 'Asymmetry of anticrossing between atomic steps on metal and semiconductor surfaces', Journal of Physics: Conference Series, vol. 2227, no. 1, 012008. https://doi.org/10.1088/1742-6596/2227/1/012008

APA

Khoroshilov, V. S., Kazantsev, D. M., Alperovich, V. L., Coupeau, C., & Drouet, M. (2022). Asymmetry of anticrossing between atomic steps on metal and semiconductor surfaces. Journal of Physics: Conference Series, 2227(1), [012008]. https://doi.org/10.1088/1742-6596/2227/1/012008

Vancouver

Khoroshilov VS, Kazantsev DM, Alperovich VL, Coupeau C, Drouet M. Asymmetry of anticrossing between atomic steps on metal and semiconductor surfaces. Journal of Physics: Conference Series. 2022 Mar 28;2227(1):012008. doi: 10.1088/1742-6596/2227/1/012008

Author

Khoroshilov, V. S. ; Kazantsev, D. M. ; Alperovich, V. L. et al. / Asymmetry of anticrossing between atomic steps on metal and semiconductor surfaces. In: Journal of Physics: Conference Series. 2022 ; Vol. 2227, No. 1.

BibTeX

@article{a5bd4607059247aa82ae8cd6bca4a7ba,
title = "Asymmetry of anticrossing between atomic steps on metal and semiconductor surfaces",
abstract = "The interaction between intersecting vicinal and dislocation-induced atomic steps on crystal surfaces is studied experimentally on Au(111) and GaAs(001) and numerically using Monte-Carlo simulation. The interaction between intersecting steps leads to the {"}anticrossing{"}phenomenon which consists in the formation of a three-level relief configuration with the upper and lower terraces separated by a nanometer-sized bridge of intermediate height. The anticrossing effect is driven by the effective repulsion of two new combinatory steps bordering the upper and lower terraces. Two types of asymmetry between the combinatory steps are considered. In particular, the reasons for different curvature radii of the upper and lower combinatory steps are discussed, along with the issue of why dislocation-induced steps remain straight under annealing, while vicinal steps obtain clear visible ledges. ",
author = "Khoroshilov, {V. S.} and Kazantsev, {D. M.} and Alperovich, {V. L.} and C. Coupeau and M. Drouet",
note = "Funding Information: The Monte-Carlo simulations and atomic force microscopy measurements on GaAs surfaces financially supported by the Russian Science Foundation (grant number 19-72-30023). Publisher Copyright: {\textcopyright} Published under licence by IOP Publishing Ltd.; 23rd Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2021 ; Conference date: 22-11-2021 Through 26-11-2021",
year = "2022",
month = mar,
day = "28",
doi = "10.1088/1742-6596/2227/1/012008",
language = "English",
volume = "2227",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "1",

}

RIS

TY - JOUR

T1 - Asymmetry of anticrossing between atomic steps on metal and semiconductor surfaces

AU - Khoroshilov, V. S.

AU - Kazantsev, D. M.

AU - Alperovich, V. L.

AU - Coupeau, C.

AU - Drouet, M.

N1 - Funding Information: The Monte-Carlo simulations and atomic force microscopy measurements on GaAs surfaces financially supported by the Russian Science Foundation (grant number 19-72-30023). Publisher Copyright: © Published under licence by IOP Publishing Ltd.

PY - 2022/3/28

Y1 - 2022/3/28

N2 - The interaction between intersecting vicinal and dislocation-induced atomic steps on crystal surfaces is studied experimentally on Au(111) and GaAs(001) and numerically using Monte-Carlo simulation. The interaction between intersecting steps leads to the "anticrossing"phenomenon which consists in the formation of a three-level relief configuration with the upper and lower terraces separated by a nanometer-sized bridge of intermediate height. The anticrossing effect is driven by the effective repulsion of two new combinatory steps bordering the upper and lower terraces. Two types of asymmetry between the combinatory steps are considered. In particular, the reasons for different curvature radii of the upper and lower combinatory steps are discussed, along with the issue of why dislocation-induced steps remain straight under annealing, while vicinal steps obtain clear visible ledges.

AB - The interaction between intersecting vicinal and dislocation-induced atomic steps on crystal surfaces is studied experimentally on Au(111) and GaAs(001) and numerically using Monte-Carlo simulation. The interaction between intersecting steps leads to the "anticrossing"phenomenon which consists in the formation of a three-level relief configuration with the upper and lower terraces separated by a nanometer-sized bridge of intermediate height. The anticrossing effect is driven by the effective repulsion of two new combinatory steps bordering the upper and lower terraces. Two types of asymmetry between the combinatory steps are considered. In particular, the reasons for different curvature radii of the upper and lower combinatory steps are discussed, along with the issue of why dislocation-induced steps remain straight under annealing, while vicinal steps obtain clear visible ledges.

UR - http://www.scopus.com/inward/record.url?scp=85127951435&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/2227/1/012008

DO - 10.1088/1742-6596/2227/1/012008

M3 - Conference article

AN - SCOPUS:85127951435

VL - 2227

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012008

T2 - 23rd Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2021

Y2 - 22 November 2021 through 26 November 2021

ER -

ID: 35893693