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Approximate analytical description of the elastic strain field due to an inclusion in a continuous medium with cubic anisotropy. / Nenashev, A. V.; Koshkarev, A. A.; Dvurechenskii, A. V.

In: Journal of Applied Physics, Vol. 123, No. 10, 105104, 14.03.2018.

Research output: Contribution to journal › Article › peer-review

Harvard

Nenashev, AV, Koshkarev, AA & Dvurechenskii, AV 2018, 'Approximate analytical description of the elastic strain field due to an inclusion in a continuous medium with cubic anisotropy', Journal of Applied Physics, vol. 123, no. 10, 105104. https://doi.org/10.1063/1.5019335

APA

Nenashev, A. V., Koshkarev, A. A., & Dvurechenskii, A. V. (2018). Approximate analytical description of the elastic strain field due to an inclusion in a continuous medium with cubic anisotropy. Journal of Applied Physics, 123(10), [105104]. https://doi.org/10.1063/1.5019335

Vancouver

Nenashev AV, Koshkarev AA, Dvurechenskii AV. Approximate analytical description of the elastic strain field due to an inclusion in a continuous medium with cubic anisotropy. Journal of Applied Physics. 2018 Mar 14;123(10):105104. doi: 10.1063/1.5019335

Author

Nenashev, A. V. ; Koshkarev, A. A. ; Dvurechenskii, A. V. / Approximate analytical description of the elastic strain field due to an inclusion in a continuous medium with cubic anisotropy. In: Journal of Applied Physics. 2018 ; Vol. 123, No. 10.

BibTeX

@article{9b25a5ac64714b9084cd66460788b846,
title = "Approximate analytical description of the elastic strain field due to an inclusion in a continuous medium with cubic anisotropy",
abstract = "We suggest an approach to the analytical calculation of the strain distribution due to an inclusion in elastically anisotropic media for the case of cubic anisotropy. The idea consists in the approximate reduction of the anisotropic problem to a (simpler) isotropic problem. This gives, for typical semiconductors, an improvement in accuracy by an order of magnitude, compared to the isotropic approximation. Our method allows using, in the case of elastically anisotropic media, analytical solutions obtained for isotropic media only, such as analytical formulas for the strain due to polyhedral inclusions. The present work substantially extends the applicability of analytical results, making them more suitable for describing real systems, such as epitaxial quantum dots.",
keywords = "QUANTUM DOTS, ELECTRONIC-STRUCTURE, POLYGONAL INCLUSION, GRADED EIGENSTRAIN, ARBITRARY POLYGON, PLANE, NANOSTRUCTURES, DISTRIBUTIONS, SOLIDS",
author = "Nenashev, {A. V.} and Koshkarev, {A. A.} and Dvurechenskii, {A. V.}",
year = "2018",
month = mar,
day = "14",
doi = "10.1063/1.5019335",
language = "English",
volume = "123",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "AMER INST PHYSICS",
number = "10",

}

RIS

TY - JOUR

T1 - Approximate analytical description of the elastic strain field due to an inclusion in a continuous medium with cubic anisotropy

AU - Nenashev, A. V.

AU - Koshkarev, A. A.

AU - Dvurechenskii, A. V.

PY - 2018/3/14

Y1 - 2018/3/14

N2 - We suggest an approach to the analytical calculation of the strain distribution due to an inclusion in elastically anisotropic media for the case of cubic anisotropy. The idea consists in the approximate reduction of the anisotropic problem to a (simpler) isotropic problem. This gives, for typical semiconductors, an improvement in accuracy by an order of magnitude, compared to the isotropic approximation. Our method allows using, in the case of elastically anisotropic media, analytical solutions obtained for isotropic media only, such as analytical formulas for the strain due to polyhedral inclusions. The present work substantially extends the applicability of analytical results, making them more suitable for describing real systems, such as epitaxial quantum dots.

AB - We suggest an approach to the analytical calculation of the strain distribution due to an inclusion in elastically anisotropic media for the case of cubic anisotropy. The idea consists in the approximate reduction of the anisotropic problem to a (simpler) isotropic problem. This gives, for typical semiconductors, an improvement in accuracy by an order of magnitude, compared to the isotropic approximation. Our method allows using, in the case of elastically anisotropic media, analytical solutions obtained for isotropic media only, such as analytical formulas for the strain due to polyhedral inclusions. The present work substantially extends the applicability of analytical results, making them more suitable for describing real systems, such as epitaxial quantum dots.

KW - QUANTUM DOTS

KW - ELECTRONIC-STRUCTURE

KW - POLYGONAL INCLUSION

KW - GRADED EIGENSTRAIN

KW - ARBITRARY POLYGON

KW - PLANE

KW - NANOSTRUCTURES

KW - DISTRIBUTIONS

KW - SOLIDS

UR - http://www.scopus.com/inward/record.url?scp=85043794135&partnerID=8YFLogxK

U2 - 10.1063/1.5019335

DO - 10.1063/1.5019335

M3 - Article

AN - SCOPUS:85043794135

VL - 123

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 10

M1 - 105104

ER -

ID: 10525092