Research output: Contribution to journal › Article › peer-review
Anomalously large gap and induced out-of-plane spin polarization in magnetically doped 2D Rashba system : V-doped BiTeI. / Shikin, A. M.; Rybkina, A. A.; Klimovskikh, I. I. et al.
In: 2D Materials, Vol. 4, No. 2, 025055, 01.06.2017.Research output: Contribution to journal › Article › peer-review
}
TY - JOUR
T1 - Anomalously large gap and induced out-of-plane spin polarization in magnetically doped 2D Rashba system
T2 - V-doped BiTeI
AU - Shikin, A. M.
AU - Rybkina, A. A.
AU - Klimovskikh, I. I.
AU - Tereshchenko, O. E.
AU - Bogomyakov, A. S.
AU - Kokh, K. A.
AU - Kimura, A.
AU - Skirdkov, P. N.
AU - Zvezdin, K. A.
AU - Zvezdin, A. K.
PY - 2017/6/1
Y1 - 2017/6/1
N2 - We have studied an energy gap opening at the Kramers point of quasi-2D Rashba semiconductor BiTeI with magnetic doping and influence of circularly polarized synchrotron radiation (SR) on the induced out-of-plane spin polarization of the gapped state. By means of angle- and spinresolved photoemission spectroscopy we have shown that below a Curie temperature, at 15-20 K, a spontaneous anomalously large energy gap at the Kramers point appears up to 90 and 125 meV depending on the V concentration (0.5 and 2%, respectively). Nevertheless, spin-resolved measurements show only a weak out-of-plane spin polarization both for the V 3d-resonances and the Rashba states owing to the presence of magnetic domains with opposite magnetic moments spontaneously generated without external magnetic field. Above a Curie temperature the out-of-plane spin polarization for the V 3d-resonances and 2D Rashba electron gas can be also induced by circularly polarized SR reversed in dependence on the chirality of circular polarization. It is followed by opening the energy gap at the Kramers point that confirms the induced magnetization. We connect the SR-induced out-of-plane spin polarization with a SR-derived hole generation leading to corresponding uncompensated spin accumulation in 2D Rashba electron gas with transferring the induced torque to the diluted V 3d-ions. The theoretical estimations corroborate well the experimental results.
AB - We have studied an energy gap opening at the Kramers point of quasi-2D Rashba semiconductor BiTeI with magnetic doping and influence of circularly polarized synchrotron radiation (SR) on the induced out-of-plane spin polarization of the gapped state. By means of angle- and spinresolved photoemission spectroscopy we have shown that below a Curie temperature, at 15-20 K, a spontaneous anomalously large energy gap at the Kramers point appears up to 90 and 125 meV depending on the V concentration (0.5 and 2%, respectively). Nevertheless, spin-resolved measurements show only a weak out-of-plane spin polarization both for the V 3d-resonances and the Rashba states owing to the presence of magnetic domains with opposite magnetic moments spontaneously generated without external magnetic field. Above a Curie temperature the out-of-plane spin polarization for the V 3d-resonances and 2D Rashba electron gas can be also induced by circularly polarized SR reversed in dependence on the chirality of circular polarization. It is followed by opening the energy gap at the Kramers point that confirms the induced magnetization. We connect the SR-induced out-of-plane spin polarization with a SR-derived hole generation leading to corresponding uncompensated spin accumulation in 2D Rashba electron gas with transferring the induced torque to the diluted V 3d-ions. The theoretical estimations corroborate well the experimental results.
KW - 2D Rashba system
KW - Angle-resolved photoemission spectroscopy
KW - Electronic structure
KW - Magnetically-doped 2D system
KW - Spin polarization
KW - Spin-resolved photoemission spectroscopy
KW - spin-resolved photoemission spectroscopy
KW - DIRAC-FERMION
KW - spin polarization
KW - TOPOLOGICAL INSULATOR
KW - TEXTURE
KW - electronic structure
KW - SURFACE
KW - FERROMAGNETISM
KW - magnetically-doped 2D system
KW - LAYER
KW - angle-resolved photoemission spectroscopy
UR - http://www.scopus.com/inward/record.url?scp=85021294560&partnerID=8YFLogxK
U2 - 10.1088/2053-1583/aa65bd
DO - 10.1088/2053-1583/aa65bd
M3 - Article
AN - SCOPUS:85021294560
VL - 4
JO - 2D Materials
JF - 2D Materials
SN - 2053-1583
IS - 2
M1 - 025055
ER -
ID: 10182734