Achieving a high Short Circuit Current Density of 40.9 mA/cm2 for Two-Side Contacted Silicon Heterojunction Solar Cells by using SiC-based Transparent Passivating Contacts › Research Explorer

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Achieving a high Short Circuit Current Density of 40.9 mA/cm2 for Two-Side Contacted Silicon Heterojunction Solar Cells by using SiC-based Transparent Passivating Contacts

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

General Physics Section

DOI

https://doi.org/10.1109/PVSC43889.2021.9518496
Final published version

Alexander Eberst
Alexandr Zamchiy
Kaifu Qiu
Andreas Lambertz
Weiyuan Duan
Shenghao Li
Karsten Bittkau
Stefan Haas
Friedhelm Finger
Thomas Kirchartz
Uwe Rau
Kaining Ding

Original language	English
Title of host publication	2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	300-302
Number of pages	3
ISBN (Electronic)	9781665419222
ISBN (Print)	9781665419222
DOIs	https://doi.org/10.1109/PVSC43889.2021.9518496
Publication status	Published - 20 Jun 2021
Event	48th IEEE Photovoltaic Specialists Conference, PVSC 2021 - Fort Lauderdale, United States Duration: 20 Jun 2021 → 25 Jun 2021

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Conference

Conference	48th IEEE Photovoltaic Specialists Conference, PVSC 2021
Country/Territory	United States
City	Fort Lauderdale
Period	20.06.2021 → 25.06.2021

Research areas

passivating contact, silicon carbide, silicon solar cell, transparent passivating contact

OECD FOS+WOS

2.02.IQ ENGINEERING, ELECTRICAL & ELECTRONIC
2.11.IF ENGINEERING, MULTIDISCIPLINARY
2.11.IJ ENGINEERING, INDUSTRIAL
2.11.IK ENGINEERING, MANUFACTURING

ID: 34348217