A pertinent approximation of the electrostatic potential in a quantized electron accumulation layer induced at a nonideal surface of a narrow-gap semiconductor

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	e2260
Number of pages	17
Journal	International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
Volume	31
Issue number	1
DOIs	https://doi.org/10.1002/jnm.2260
Publication status	Published - 1 Jan 2018

electron accumulation layer, electrostatic potential, MIS structure, nonideal surface, novel approximating function, SUBBAND STRUCTURE, STATES, FIELD, BAND-STRUCTURE, CAPACITANCE, DENSITY, CHANNEL, INSB, CHARGE, INVERSION-LAYERS

ID: 12078212