1. 2017
  2. Fundamental characteristic length scale for the field dependence of hopping charge transport in disordered organic semiconductors

    Nenashev, A. V., Oelerich, J. O., Dvurechenskii, A. V., Gebhard, F. & Baranovskii, S. D., 21 Jul 2017, In: Physical Review B. 96, 3, 7 p., 035204.

    Research output: Contribution to journalArticlepeer-review

  3. Analytical theory for charge carrier recombination in blend organic solar cells

    Nenashev, A. V., Wiemer, M., Dvurechenskii, A. V., Kulik, L. V., Pevtsov, A. B., Gebhard, F., Koch, M. & Baranovskii, S. D., 28 Mar 2017, In: Physical Review B. 95, 10, 12 p., 104207.

    Research output: Contribution to journalArticlepeer-review

  4. Elastic strain field due to an inclusion of a polyhedral shape with a non-uniform lattice misfit

    Nenashev, A. V. & Dvurechenskii, A. V., 28 Mar 2017, In: Journal of Applied Physics. 121, 12, 19 p., 125102.

    Research output: Contribution to journalArticlepeer-review

  5. ESR Study of Electron States in Ge/Si Heterostructures with Nanodisc Shaped Quantum Dots

    Zinovieva, A. F., Zinovyev, V. A., Nenashev, A. V., Kulik, L. V. & Dvurechenskii, A. V., 1 Feb 2017, In: Zeitschrift fur Physikalische Chemie. 231, 2, p. 405-423 19 p.

    Research output: Contribution to journalArticlepeer-review

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