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  1. 2017

  2. Hall effect in hopping conduction in an ensemble of quantum dots

    Stepina, N. P., Nenashev, A. V. & Dvurechenskii, A. V., 1 Sept 2017, In: JETP Letters. 106, 5, p. 308-312 5 p.

    Research output: Contribution to journal › Article › peer-review

  3. Fundamental characteristic length scale for the field dependence of hopping charge transport in disordered organic semiconductors

    Nenashev, A. V., Oelerich, J. O., Dvurechenskii, A. V., Gebhard, F. & Baranovskii, S. D., 21 Jul 2017, In: Physical Review B. 96, 3, 7 p., 035204.

    Research output: Contribution to journal › Article › peer-review

  4. Analytical theory for charge carrier recombination in blend organic solar cells

    Nenashev, A. V., Wiemer, M., Dvurechenskii, A. V., Kulik, L. V., Pevtsov, A. B., Gebhard, F., Koch, M. & Baranovskii, S. D., 28 Mar 2017, In: Physical Review B. 95, 10, 12 p., 104207.

    Research output: Contribution to journal › Article › peer-review

  5. Elastic strain field due to an inclusion of a polyhedral shape with a non-uniform lattice misfit

    Nenashev, A. V. & Dvurechenskii, A. V., 28 Mar 2017, In: Journal of Applied Physics. 121, 12, 19 p., 125102.

    Research output: Contribution to journal › Article › peer-review

  6. ESR Study of Electron States in Ge/Si Heterostructures with Nanodisc Shaped Quantum Dots

    Zinovieva, A. F., Zinovyev, V. A., Nenashev, A. V., Kulik, L. V. & Dvurechenskii, A. V., 1 Feb 2017, In: Zeitschrift fur Physikalische Chemie. 231, 2, p. 405-423 19 p.

    Research output: Contribution to journal › Article › peer-review

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