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  1. 2024

  2. Parametrization of the charge-carrier mobility in organic disordered semiconductors

    Baranovskii, S. D., Nenashev, A. V., Hertel, D., Meerholz, K. & Gebhard, F., Jul 2024, In: Physical Review Applied. 22, 1, 12 p., 014019.

    Research output: Contribution to journal › Article › peer-review

  3. 2023

  4. Quantum states in disordered media. II. Spatial charge carrier distribution

    Nenashev, A. V., Baranovskii, S. D., Meerholz, K. & Gebhard, F., 1 Feb 2023, In: Physical Review B. 107, 6, 23 p., 064207.

    Research output: Contribution to journal › Article › peer-review

  5. Quantum states in disordered media. I. Low-pass filter approach

    Gebhard, F., Nenashev, A. V., Meerholz, K. & Baranovskii, S. D., 2023, In: Physical Review B. 107, 6, 17 p., 064206.

    Research output: Contribution to journal › Article › peer-review

  6. 2022

  7. Groups of Ge nanoislands grown outside pits on pit-patterned Si substrates

    Rudin, S. A., Zinovyev, V. A., Smagina, Z. V., Novikov, P. L., Nenashev, A. V. & Pavsky, K. V., 1 Sept 2022, In: Journal of Crystal Growth. 593, 126763.

    Research output: Contribution to journal › Article › peer-review

  8. Percolation Description of Charge Transport in Amorphous Oxide Semiconductors: Band Conduction Dominated by Disorder

    Nenashev, A. V., Gebhard, F., Meerholz, K. & Baranovskii, S. D., Aug 2022, Amorphous Oxide Semiconductors: A singular resource on amorphous oxide semiconductors edited by a world-recognized pioneer in the field. Hosono, H. & Kumomi, H. (eds.). Wiley-VCH Verlag, p. 125-144 20 p. (Amorphous Oxide Semiconductors).

    Research output: Chapter in Book/Report/Conference proceeding › Chapter › Research › peer-review

  9. Comment on “Interplay of Structural and Optoelectronic Properties in Formamidinium Mixed Tin-Lead Triiodide Perovskites”

    Baranovskii, S. D., Höhbusch, P., Nenashev, A. V., Dvurechenskii, A. V., Gerhard, M., Hertel, D., Meerholz, K., Koch, M. & Gebhard, F., 25 Jul 2022, In: Advanced Functional Materials. 32, 30, 2201309.

    Research output: Contribution to journal › Article › peer-review

  10. Generating Function Method for Calculating the Potentials of Inhomogeneous Polyhedra

    Nenashev, A. V., 20 Jan 2022, In: Frontiers in Physics. 9, 795693.

    Research output: Contribution to journal › Article › peer-review

  11. Weak antilocalization to weak localization transition in Bi2Se3 films on graphene

    Stepina, N. P., Golyashov, V. A., Nenashev, A. V., Tereshchenko, O. E., Kokh, K. A., Kirienko, V. V., Koptev, E. S., Goldyreva, E. S., Rybin, M. G., Obraztsova, E. D. & Antonova, I. V., Jan 2022, In: Physica E: Low-Dimensional Systems and Nanostructures. 135, 114969.

    Research output: Contribution to journal › Article › peer-review

  12. 2021

  13. Tunneling current modulation in atomically precise graphene nanoribbon heterojunctions

    Senkovskiy, B. V., Nenashev, A. V., Alavi, S. K., Falke, Y., Hell, M., Bampoulis, P., Rybkovskiy, D. V., Usachov, D. Y., Fedorov, A. V., Chernov, A. I., Gebhard, F., Meerholz, K., Hertel, D., Arita, M., Okuda, T., Miyamoto, K., Shimada, K., Fischer, F. R., Michely, T., Baranovskii, S. D., & 3 othersLindfors, K., Szkopek, T. & Grüneis, A., 1 Dec 2021, In: Nature Communications. 12, 1, p. 2542 2542.

    Research output: Contribution to journal › Article › peer-review

  14. One-stage formation of two-dimensional photonic crystal and spatially ordered arrays of self-assembled ge(Si) nanoislandson pit-patterned silicon-on-insulator substrate

    Novikov, A. V., Smagina, Z. V., Stepikhova, M. V., Zinovyev, V. A., Rudin, S. A., Dyakov, S. A., Rodyakina, E. E., Nenashev, A. V., Sergeev, S. M., Peretokin, A. V. & Dvurechenskii, A. V., Apr 2021, In: Nanomaterials. 11, 4, 909.

    Research output: Contribution to journal › Article › peer-review

  15. Formation of InAs/GaP Quantum-Well Heterostructures on Silicon Substrates by Molecular-Beam Epitaxy

    Abramkin, D. S., Petrushkov, M. O., Emelyanov, E. A., Nenashev, A. V., Yesin, M. Y., Vasev, A. V., Putyato, M. A., Bogomolov, D. B., Gutakovskiy, A. K. & Preobrazhenskiy, V. V., Feb 2021, In: Semiconductors. 55, 2, p. 194-201 8 p.

    Research output: Contribution to journal › Article › peer-review

  16. Electron Spin Resonance in Heterostructures with Ring Molecules of GeSi Quantum Dots

    Zinovieva, A. F., Zinovyev, V. A., Nenashev, A. V., Shklyaev, A. A., Kulik, L. V. & Dvurechenskii, A. V., Jan 2021, In: JETP Letters. 113, 1, p. 52-56 5 p.

    Research output: Contribution to journal › Article › peer-review

  17. 2020

  18. Self-Organization of Ge(Si) Nanoisland Groups on Pit-Patterned Si(100) Substrates

    Smagina, Z. V., Zinoviev, V. A., Rudin, S. A., Rodyakina, E. E., Novikov, P. L., Nenashev, A. V. & Dvurechenskii, A. V., Dec 2020, In: Semiconductors. 54, 14, p. 1866-1868 3 p.

    Research output: Contribution to journal › Article › peer-review

  19. Comment on "charge transport in disordered semiconducting polymers driven by nuclear tunneling"

    Nenashev, A. V., Gebhard, F. & Baranovskii, S. D., 1 Aug 2020, In: Physical Review B. 102, 6, 1 p., 066201.

    Research output: Contribution to journal › Article › peer-review

  20. Luminescence of Spatially Ordered Self-Assembled Solitary Ge(Si) Nanoislands and their Groups Incorporated into Photonic Crystals

    Smagina, Z. V., Novikov, A. V., Stepikhova, M. V., Zinovyev, V. A., Rodyakina, E. E., Nenashev, A. V., Sergeev, S. M., Peretokin, A. V., Kuchinskaya, P. A., Shaleev, M. V., Gusev, S. A. & Dvurechenskii, A. V., 1 Aug 2020, In: Semiconductors. 54, 8, p. 853-859 7 p.

    Research output: Contribution to journal › Article › peer-review

  21. Magnetic field effect on the slow relaxation of photoconductance in tunnel coupled quantum dot arrays

    Stepina, N. P., Shumilin, A. V., Zinovieva, A. F., Nenashev, A. V., Gornov, A. Y. & Dvurechenskii, A. V., Jul 2020, In: Physica E: Low-Dimensional Systems and Nanostructures. 121, 5 p., 114126.

    Research output: Contribution to journal › Article › peer-review

  22. Self-assembled epitaxial metal-semiconductor nanostructures with enhanced GeSi quantum dot luminescence

    Zinovyev, V. A., Zinovieva, A. F., Nenashev, A. V., Dvurechenskii, A. V., Katsuba, A. V., Borodavchenko, O. M., Zhivulko, V. D. & Mudryi, A. V., 28 Jun 2020, In: Journal of Applied Physics. 127, 24, 7 p., 243108.

    Research output: Contribution to journal › Article › peer-review

  23. Photoluminescence of compact GeSi quantum dot groups with increased probability of finding an electron in Ge

    Zinovieva, A. F., Zinovyev, V. A., Nenashev, A. V., Teys, S. A., Dvurechenskii, A. V., Borodavchenko, O. M., Zhivulko, V. D. & Mudryi, A. V., 9 Jun 2020, In: Scientific Reports. 10, 1, 9 p., 9308.

    Research output: Contribution to journal › Article › peer-review

  24. Variational method of energy level calculation in pyramidal quantum dots

    Nenashev, A. V. & Dvurechenskii, A. V., 21 Apr 2020, In: Journal of Applied Physics. 127, 15, 8 p., 154301.

    Research output: Contribution to journal › Article › peer-review

  25. 2019

  26. Percolation description of charge transport in amorphous oxide semiconductors

    Nenashev, A. V., Oelerich, J. O., Greiner, S. H. M., Dvurechenskii, A. V., Gebhard, F. & Baranovskii, S. D., 12 Sept 2019, In: Physical Review B. 100, 12, 8 p., 125202.

    Research output: Contribution to journal › Article › peer-review

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