Luminescence of Spatially Ordered Self-Assembled Solitary Ge(Si) Nanoislands and their Groups Incorporated into Photonic Crystals

Smagina, Z. V., Novikov, A. V., Stepikhova, M. V., Zinovyev, V. A., Rodyakina, E. E., Nenashev, A. V., Sergeev, S. M., Peretokin, A. V., Kuchinskaya, P. A., Shaleev, M. V., Gusev, S. A. & Dvurechenskii, A. V., 1 Aug 2020, In: Semiconductors. 54, 8, p. 853-859 7 p.

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Self-Organization of Ge(Si) Nanoisland Groups on Pit-Patterned Si(100) Substrates

Smagina, Z. V., Zinoviev, V. A., Rudin, S. A., Rodyakina, E. E., Novikov, P. L., Nenashev, A. V. & Dvurechenskii, A. V., Dec 2020, In: Semiconductors. 54, 14, p. 1866-1868 3 p.

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Electron Spin Resonance in Heterostructures with Ring Molecules of GeSi Quantum Dots

Zinovieva, A. F., Zinovyev, V. A., Nenashev, A. V., Shklyaev, A. A., Kulik, L. V. & Dvurechenskii, A. V., Jan 2021, In: JETP Letters. 113, 1, p. 52-56 5 p.

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Formation of InAs/GaP Quantum-Well Heterostructures on Silicon Substrates by Molecular-Beam Epitaxy

Abramkin, D. S., Petrushkov, M. O., Emelyanov, E. A., Nenashev, A. V., Yesin, M. Y., Vasev, A. V., Putyato, M. A., Bogomolov, D. B., Gutakovskiy, A. K. & Preobrazhenskiy, V. V., Feb 2021, In: Semiconductors. 55, 2, p. 194-201 8 p.

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One-stage formation of two-dimensional photonic crystal and spatially ordered arrays of self-assembled ge(Si) nanoislandson pit-patterned silicon-on-insulator substrate

Novikov, A. V., Smagina, Z. V., Stepikhova, M. V., Zinovyev, V. A., Rudin, S. A., Dyakov, S. A., Rodyakina, E. E., Nenashev, A. V., Sergeev, S. M., Peretokin, A. V. & Dvurechenskii, A. V., Apr 2021, In: Nanomaterials. 11, 4, 909.

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Tunneling current modulation in atomically precise graphene nanoribbon heterojunctions

Senkovskiy, B. V., Nenashev, A. V., Alavi, S. K., Falke, Y., Hell, M., Bampoulis, P., Rybkovskiy, D. V., Usachov, D. Y., Fedorov, A. V., Chernov, A. I., Gebhard, F., Meerholz, K., Hertel, D., Arita, M., Okuda, T., Miyamoto, K., Shimada, K., Fischer, F. R., Michely, T., Baranovskii, S. D., & 3 othersLindfors, K., Szkopek, T. & Grüneis, A., 1 Dec 2021, In: Nature Communications. 12, 1, p. 2542 2542.

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Weak antilocalization to weak localization transition in Bi₂Se₃ films on graphene

Stepina, N. P., Golyashov, V. A., Nenashev, A. V., Tereshchenko, O. E., Kokh, K. A., Kirienko, V. V., Koptev, E. S., Goldyreva, E. S., Rybin, M. G., Obraztsova, E. D. & Antonova, I. V., Jan 2022, In: Physica E: Low-Dimensional Systems and Nanostructures. 135, 114969.

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Generating Function Method for Calculating the Potentials of Inhomogeneous Polyhedra

Nenashev, A. V., 20 Jan 2022, In: Frontiers in Physics. 9, 795693.

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Comment on “Interplay of Structural and Optoelectronic Properties in Formamidinium Mixed Tin-Lead Triiodide Perovskites”

Baranovskii, S. D., Höhbusch, P., Nenashev, A. V., Dvurechenskii, A. V., Gerhard, M., Hertel, D., Meerholz, K., Koch, M. & Gebhard, F., 25 Jul 2022, In: Advanced Functional Materials. 32, 30, 2201309.

Research output: Contribution to journal › Article › peer-review