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  1. 2018

  2. Release of carriers from traps enhanced by hopping

    Nenashev, A. V., Valkovskii, V. V., Oelerich, J. O., Dvurechenskii, A. V., Semeniuk, O., Reznik, A., Gebhard, F. & Baranovskii, S. D., 30 Oct 2018, In: Physical Review B. 98, 15, 10 p., 155207.

    Research output: Contribution to journal › Article › peer-review

  3. Nucleation of Three-Dimensional Ge Islands on a Patterned Si(100) Surface

    Rudin, S. A., Smagina, Z. V., Zinovyev, V. A., Novikov, P. L., Nenashev, A. V., Rodyakina, E. E. & Dvurechenskii, A. V., 1 Nov 2018, In: Semiconductors. 52, 11, p. 1457-1461 5 p.

    Research output: Contribution to journal › Article › peer-review

  4. 2019

  5. Electron spatial localization tuned by strain in Ge/Si quantum dot heterostructures

    Zinovieva, A. F., Zinovyev, V. A., Nenashev, A. V., Kulik, L. V. & Dvurechenskii, A. V., 22 Mar 2019, In: Physical Review B. 99, 11, 9 p., 115314.

    Research output: Contribution to journal › Article › peer-review

  6. Percolation description of charge transport in the random barrier model applied to amorphous oxide semiconductors

    Baranovskii, S. D., Nenashev, A. V., Oelerich, J. O., Greiner, S. H. M., Dvurechenskii, A. V. & Gebhard, F., 1 Sept 2019, In: EPL. 127, 5, 5 p., 57004.

    Research output: Contribution to journal › Article › peer-review

  7. Percolation description of charge transport in amorphous oxide semiconductors

    Nenashev, A. V., Oelerich, J. O., Greiner, S. H. M., Dvurechenskii, A. V., Gebhard, F. & Baranovskii, S. D., 12 Sept 2019, In: Physical Review B. 100, 12, 8 p., 125202.

    Research output: Contribution to journal › Article › peer-review

  8. 2020

  9. Variational method of energy level calculation in pyramidal quantum dots

    Nenashev, A. V. & Dvurechenskii, A. V., 21 Apr 2020, In: Journal of Applied Physics. 127, 15, 8 p., 154301.

    Research output: Contribution to journal › Article › peer-review

  10. Photoluminescence of compact GeSi quantum dot groups with increased probability of finding an electron in Ge

    Zinovieva, A. F., Zinovyev, V. A., Nenashev, A. V., Teys, S. A., Dvurechenskii, A. V., Borodavchenko, O. M., Zhivulko, V. D. & Mudryi, A. V., 9 Jun 2020, In: Scientific Reports. 10, 1, 9 p., 9308.

    Research output: Contribution to journal › Article › peer-review

  11. Self-assembled epitaxial metal-semiconductor nanostructures with enhanced GeSi quantum dot luminescence

    Zinovyev, V. A., Zinovieva, A. F., Nenashev, A. V., Dvurechenskii, A. V., Katsuba, A. V., Borodavchenko, O. M., Zhivulko, V. D. & Mudryi, A. V., 28 Jun 2020, In: Journal of Applied Physics. 127, 24, 7 p., 243108.

    Research output: Contribution to journal › Article › peer-review

  12. Magnetic field effect on the slow relaxation of photoconductance in tunnel coupled quantum dot arrays

    Stepina, N. P., Shumilin, A. V., Zinovieva, A. F., Nenashev, A. V., Gornov, A. Y. & Dvurechenskii, A. V., Jul 2020, In: Physica E: Low-Dimensional Systems and Nanostructures. 121, 5 p., 114126.

    Research output: Contribution to journal › Article › peer-review

  13. Comment on "charge transport in disordered semiconducting polymers driven by nuclear tunneling"

    Nenashev, A. V., Gebhard, F. & Baranovskii, S. D., 1 Aug 2020, In: Physical Review B. 102, 6, 1 p., 066201.

    Research output: Contribution to journal › Article › peer-review

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