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  1. 2024

  2. Mechanisms of Optical Gain in Heavily Doped AlxGa1 –xN:Si Structures (x = 0.56–1)

    Bokhan, P. A., Zhuravlev, K. S., Zakrevsky, D. E., Malin, T. V. & Fateev, N. V., May 2024, In: Semiconductors. 58, 5, p. 386-392 7 p.

    Research output: Contribution to journal › Article › peer-review

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ID: 3435398