81 - 86 out of 86Page size: 20
  1. 2017

  2. Photogalvanic probing of helical edge channels in two-dimensional HgTe topological insulators

    Dantscher, K. M., Kozlov, D. A., Scherr, M. T., Gebert, S., Bärenfänger, J., Durnev, M. V., Tarasenko, S. A., Bel'Kov, V. V., Mikhailov, N. N., Dvoretsky, S. A., Kvon, Z. D., Ziegler, J., Weiss, D. & Ganichev, S. D., 8 May 2017, In: Physical Review B. 95, 20, 5 p., 201103.

    Research output: Contribution to journal › Article › peer-review

  3. Quantum capacitance of a three-dimensional topological insulator based on HgTe

    Kozlov, D. A., Bauer, D., Ziegler, J., Fischer, R., Savchenko, M. L., Kvon, Z. D., Mikhailov, N. N., Dvoretsky, S. A. & Weiss, D., 1 Apr 2017, In: Low Temperature Physics. 43, 4, p. 430-436 7 p.

    Research output: Contribution to journal › Article › peer-review

  4. Giant microwave-induced B -periodic magnetoresistance oscillations in a two-dimensional electron gas with a bridged-gate tunnel point contact

    Levin, A. D., Mikhailov, S. A., Gusev, G. M., Kvon, Z. D., Rodyakina, E. E. & Latyshev, A. V., 23 Feb 2017, In: Physical Review B. 95, 8, 4 p., 081408.

    Research output: Contribution to journal › Article › peer-review

  5. Modeling of Quantum Transport and Single-Electron Charging in GaAs/AlGaAs-Nanostructures

    Tkachenko, O. A., Tkachenko, V. A., Kvon, Z. D., Sheglov, D. V. & Aseev, A. L., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Publishing Company, Inc., p. 131-155 25 p. (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications).

    Research output: Chapter in Book/Report/Conference proceeding › Chapter › Research › peer-review

  6. Two-Dimensional Semimetal in HgTe-Based Quantum Wells

    Kvon, Z. D., Olshanetsky, E. B., Kozlov, D. A., Mikhailov, N. N. & Dvoretsky, S. A., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Publishing Company, Inc., p. 29-48 20 p. (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications).

    Research output: Chapter in Book/Report/Conference proceeding › Chapter › Research › peer-review

  7. 2016

  8. Terahertz resistive response of a two-dimensional topological insulator in a quasiballistic transport regime

    Kvon, Z. D., Dantscher, K. -M., Scherr, M. -T., Yaroshevich, A. S. & Mikhailov, N. N., 1 Nov 2016, In: JETP Letters. 104, 10, p. 716-720 5 p.

    Research output: Contribution to journal › Article › peer-review

Previous 1 2 3 4 5 Next

ID: 3456020