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  1. Topological insulators based on HgTe

    Kvon, Z. D., Kozlov, D. A., Olshanetsky, E. B., Gusev, G. M., Mikhailov, N. N. & Dvoretsky, S. A., 31 Jul 2020, In: Physics-Uspekhi. 63, 7, p. 629-647 19 p.

    Research output: Contribution to journal › Article › peer-review

  2. Topological Protection Brought to Light by the Time-Reversal Symmetry Breaking

    Piatrusha, S. U., Tikhonov, E. S., Kvon, Z. D., Mikhailov, N. N., Dvoretsky, S. A. & Khrapai, V. S., 2 Aug 2019, In: Physical Review Letters. 123, 5, 6 p., 056801.

    Research output: Contribution to journal › Article › peer-review

  3. Topological surface states in thick partially relaxed HgTe films

    Savchenko, M. L., Kozlov, D. A., Vasilev, N. N., Kvon, Z. D., Mikhailov, N. N., Dvoretsky, S. A. & Kolesnikov, A. V., 14 May 2019, In: Physical Review B. 99, 19, 7 p., 195423.

    Research output: Contribution to journal › Article › peer-review

  4. Transmission Spectra of HgTe-Based Quantum Wells and Films in the Far-Infrared Range

    Savchenko, M. L., Vasil’ev, N. N., Yaroshevich, A. S., Kozlov, D. A., Kvon, Z. D., Mikhailov, N. N. & Dvoretskii, S. A., 1 Apr 2018, In: Physics of the Solid State. 60, 4, p. 778-782 5 p.

    Research output: Contribution to journal › Article › peer-review

  5. Transport properties of a 1000 nm HgTe film: the interplay of surface and bulk carriers

    Savchenko, M. L., Kozlov, D. A., Vasilev, N. N., Mikhailov, N. N., Dvoretsky, S. A. & Kvon, Z. D., 25 May 2023, In: Journal of physics. Condensed matter : an Institute of Physics journal. 35, 9 p., 345302.

    Research output: Contribution to journal › Article › peer-review

  6. Transport through the network of topological channels in HgTe based quantum well

    Gusev, G. M., Kvon, Z. D., Kozlov, D. A., Olshanetsky, E. B., Entin, M. & Mikhailov, N. N., Jan 2022, In: 2D Materials. 9, 1, 8 p., 015021.

    Research output: Contribution to journal › Article › peer-review

  7. Two-Dimensional Semimetal HgTe in 14-nm-Thick Quantum Wells

    Vasil’ev, N. N., Kvon, Z. D., Mikhailov, N. N. & Ganichev, S. D., Apr 2021, In: JETP Letters. 113, 7, p. 466-470 5 p.

    Research output: Contribution to journal › Article › peer-review

  8. Two-Dimensional Semimetal in HgTe-Based Quantum Wells

    Kvon, Z. D., Olshanetsky, E. B., Kozlov, D. A., Mikhailov, N. N. & Dvoretsky, S. A., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Publishing Company, Inc., p. 29-48 20 p. (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications).

    Research output: Chapter in Book/Report/Conference proceeding › Chapter › Research › peer-review

  9. Two-dimensional semimetal in HgTe quantum well under hydrostatic pressure

    Prudkoglyad, V. A., Olshanetsky, E. B., Kvon, Z. D., Pudalov, V. M., Mikhailov, N. N. & Dvoretsky, S. A., 24 Oct 2018, In: Physical Review B. 98, 15, 10 p., 155437.

    Research output: Contribution to journal › Article › peer-review

  10. Two-dimensional topological Anderson insulator in a HgTe-based semimetal

    Khudaiberdiev, D. A., Kvon, Z. D., Ryzhkov, M. S., Kozlov, D. A., Mikhailov, N. N. & Pimenov, A., 9 May 2025, In: Physical Review Research. 7, 2, L022033.

    Research output: Contribution to journal › Article › peer-review

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