1. Band gap opening in the BiSbTeSe2 topological surface state induced by ferromagnetic surface reordering

    Kaveev, A. K., Suturin, S. M., Golyashov, V. A., Kokh, K. A., Eremeev, S. V., Estyunin, D. A., Shikin, A. M., Okotrub, A. V., Lavrov, A. N., Schwier, E. F. & Tereshchenko, O. E., Dec 2021, In: Physical Review Materials. 5, 12, 124204.

    Research output: Contribution to journalArticlepeer-review

  2. A Study of the Crystal Structure of Co40Fe40B20 Epitaxial Films on a Bi2Te3 Topological Insulator

    Kaveev, A. K., Suturin, S. M., Sokolov, N. S., Kokh, K. A. & Tereshchenko, O. E., 1 Mar 2018, In: Technical Physics Letters. 44, 3, p. 184-186 3 p.

    Research output: Contribution to journalArticlepeer-review

  3. Anomalously large gap and induced out-of-plane spin polarization in magnetically doped 2D Rashba system: V-doped BiTeI

    Shikin, A. M., Rybkina, A. A., Klimovskikh, I. I., Tereshchenko, O. E., Bogomyakov, A. S., Kokh, K. A., Kimura, A., Skirdkov, P. N., Zvezdin, K. A. & Zvezdin, A. K., 1 Jun 2017, In: 2D Materials. 4, 2, 9 p., 025055.

    Research output: Contribution to journalArticlepeer-review

  4. Annealing effect on the barrier characteristics and interface properties of Au/Pt/Ti/n-InAlAs Schottky contacts

    Aksenov, M. S., Genze, I. Y., Chistokhin, I. B., Zakirov, E. R., Dmitriev, D. V., Zhuravlev, K. S., Gutakovskii, A. K., Golyashov, V. A. & Tereshchenko, O. E., Jul 2023, In: Surfaces and Interfaces. 39, 102920.

    Research output: Contribution to journalArticlepeer-review

  5. A new imaging concept in spin polarimetry based on the spin-filter effect

    Tereshchenko, O. E., Golyashov, V. A., Rusetsky, V. S., Mironov, A. V., Demin, A. Y. & Aksenov, V. V., 1 May 2021, In: Journal of Synchrotron Radiation. 28, p. 864-875 12 p.

    Research output: Contribution to journalArticlepeer-review

  6. AlN/GaN heterostructures for normally-off transistors

    Zhuravlev, K. S., Malin, T. V., Mansurov, V. G., Tereshenko, O. E., Abgaryan, K. K., Reviznikov, D. L., Zemlyakov, V. E., Egorkin, V. I., Parnes, Y. M., Tikhomirov, V. G. & Prosvirin, I. P., 1 Mar 2017, In: Semiconductors. 51, 3, p. 379-386 8 p.

    Research output: Contribution to journalArticlepeer-review

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