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  1. Capture zone scaling in 2D Ge island nucleation on Si(111)-(7 × 7) at elevated temperatures

    Makeeva, A. A., Petrov, A. S., Rogilo, D. I., Sheglov, D. V. & Latyshev, A. V., 1 Dec 2024, In: Journal of Crystal Growth. 647, 127873.

    Research output: Contribution to journal › Article › peer-review

  2. Sn-mediated transformations on Si(111) surface: reconstructions, electromigration, homoepitaxy

    Petrov, A. S., Rogilo, D. I., Vergules, A. I., Mansurov, V. G., Sheglov, D. V. & Latyshev, A. V., Mar 2024, In: Surface Science. 741, 13 p., 122418.

    Research output: Contribution to journal › Article › peer-review

  3. Structural transitions on Si(1 1 1) surface during Sn adsorption, electromigration, and desorption studied by in situ UHV REM

    Petrov, A. S., Rogilo, D. I., Zhachuk, R. A., Vergules, A. I., Sheglov, D. V. & Latyshev, A. V., 30 Jan 2023, In: Applied Surface Science. 609, 155367.

    Research output: Contribution to journal › Article › peer-review

  4. Контроль формирования слоев графена на подложках 6H-SiC(0001) методом in situ дифракции быстрых электронов на отражение

    Дураков, Д. Е., Петров, А. С., Рогило, Д. И., Макеева, А. А., Насимов, Д. А., Никифоров, Д. Ф., Курусь, Н. Н., Милёхин, А. Г., Щеглов, Д. В. & Латышев, А. В., 2025, In: Физика и техника полупроводников. 59, 2, p. 102-108

    Research output: Contribution to journal › Article › peer-review

ID: 3542389