1. 2017
  2. Hall effect in hopping conduction in an ensemble of quantum dots

    Stepina, N. P., Nenashev, A. V. & Dvurechenskii, A. V., 1 Sept 2017, In: JETP Letters. 106, 5, p. 308-312 5 p.

    Research output: Contribution to journalArticlepeer-review

  3. Plasmon polariton enhanced mid-infrared photodetectors based on Ge quantum dots in Si

    Yakimov, A. I., Kirienko, V. V., Bloshkin, A. A., Armbrister, V. A. & Dvurechenskii, A. V., 7 Oct 2017, In: Journal of Applied Physics. 122, 13, 7 p., 133101.

    Research output: Contribution to journalArticlepeer-review

  4. Field dependence of hopping mobility: Lattice models against spatial disorder

    Oelerich, J. O., Nenashev, A. V., Dvurechenskii, A. V., Gebhard, F. & Baranovskii, S. D., 21 Nov 2017, In: Physical Review B. 96, 19, 9 p., 195208.

    Research output: Contribution to journalArticlepeer-review

  5. Effect of Interstitials Embedded in Pre-Patterned Si Substrate on Location of Ge Nanoislands

    Novikov, P. L., Atovullaev, T., Smagina, Z. V., Dvurechenskii, A. V. & Pavskii, K. V., 1 Dec 2017, In: Physica Status Solidi (C) Current Topics in Solid State Physics. 14, 12, 4 p., 1700200.

    Research output: Contribution to journalArticlepeer-review

  6. Photoluminescence from Ordered Ge/Si Quantum Dot Groups Grown on the Strain-Patterned Substrates

    Dvurechenskii, A., Zinovieva, A., Zinovyev, V., Nenashev, A., Smagina, Z., Teys, S., Shklyaev, A., Erenburg, S., Trubina, S., Borodavchenko, O., Zhivulko, V. & Mudryi, A., 1 Dec 2017, In: Physica Status Solidi (C) Current Topics in Solid State Physics. 14, 12, 6 p., 1700187.

    Research output: Contribution to journalArticlepeer-review

  7. 2018
  8. Enhanced optical properties of silicon based quantum dot heterostructures

    Dvurechenskii, A., Yakimov, A., Kirienko, V., Bloshkin, A., Zinovyev, V., Zinovieva, A. & Mudryi, A., 1 Jan 2018, Physics and Technology of Nanostructured Materials. Trans Tech Publications Ltd, Vol. 386 DDF. p. 68-74 7 p.

    Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

  9. Energy spectrum of charge carriers in elastically strained assemblies of Ge/Si quantum dots

    Bloshkin, A. A., Yakimov, A. I., Zinovieva, A. F., Zinoviev, V. A. & Dvurechenskii, A. V., Mar 2018, In: Journal of Surface Investigation. 12, 2, p. 306-316 11 p.

    Research output: Contribution to journalArticlepeer-review

  10. Approximate analytical description of the elastic strain field due to an inclusion in a continuous medium with cubic anisotropy

    Nenashev, A. V., Koshkarev, A. A. & Dvurechenskii, A. V., 14 Mar 2018, In: Journal of Applied Physics. 123, 10, 11 p., 105104.

    Research output: Contribution to journalArticlepeer-review

  11. Nucleation sites of Ge nanoislands grown on pit-patterned Si substrate prepared by electron-beam lithography

    Smagina, Z. V., Zinovyev, V. A., Rudin, S. A., Novikov, P. L., Rodyakina, E. E. & Dvurechenskii, A. V., 28 Apr 2018, In: Journal of Applied Physics. 123, 16, 5 p., 165302.

    Research output: Contribution to journalArticlepeer-review

  12. Quantum Gates with Spin States in Continuous Microwave Field

    Zinovieva, A. F., Nenashev, A. V., Koshkarev, A. A., Zarodnyuk, T. S., Gornov, A. Y. & Dvurechenskii, A. V., 1 Jul 2018, In: Russian Microelectronics. 47, 4, p. 268-278 11 p.

    Research output: Contribution to journalArticlepeer-review

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