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  1. 2017

  2. Preface

    Latyshev, A. V., Dvurechenskii, A. V. & Aseev, A. L., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Elsevier Science Publishing Company, Inc., p. xxiii-xxiv

    Research output: Chapter in Book/Report/Conference proceeding › Foreword/postscript › Research › peer-review

  3. Preface

    Latyshev, A. V., Dvurechenskii, A. V. & Aseev, A. L., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Elsevier Science Publishing Company, Inc., p. xxiii-xxiv

    Research output: Chapter in Book/Report/Conference proceeding › Foreword/postscript › Research › peer-review

  4. Silicon-Based Nanoheterostructures With Quantum Dots

    Dvurechenskii, A. V. & Yakimov, A. I., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Publishing Company, Inc., p. 59-99 41 p.

    Research output: Chapter in Book/Report/Conference proceeding › Chapter › Research › peer-review

  5. The Energy Pulse-Oriented Crystallization Phenomenon in Solids (Laser Annealing)

    Dvurechenskii, A. V., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Publishing Company, Inc., p. 367-381 15 p.

    Research output: Chapter in Book/Report/Conference proceeding › Chapter › Research › peer-review

  6. ESR Study of Electron States in Ge/Si Heterostructures with Nanodisc Shaped Quantum Dots

    Zinovieva, A. F., Zinovyev, V. A., Nenashev, A. V., Kulik, L. V. & Dvurechenskii, A. V., 1 Feb 2017, In: Zeitschrift fur Physikalische Chemie. 231, 2, p. 405-423 19 p.

    Research output: Contribution to journal › Article › peer-review

  7. Analytical theory for charge carrier recombination in blend organic solar cells

    Nenashev, A. V., Wiemer, M., Dvurechenskii, A. V., Kulik, L. V., Pevtsov, A. B., Gebhard, F., Koch, M. & Baranovskii, S. D., 28 Mar 2017, In: Physical Review B. 95, 10, 12 p., 104207.

    Research output: Contribution to journal › Article › peer-review

  8. Elastic strain field due to an inclusion of a polyhedral shape with a non-uniform lattice misfit

    Nenashev, A. V. & Dvurechenskii, A. V., 28 Mar 2017, In: Journal of Applied Physics. 121, 12, 19 p., 125102.

    Research output: Contribution to journal › Article › peer-review

  9. Selective enhancement of the hole photocurrent by surface plasmon–polaritons in layers of Ge/Si quantum dots

    Yakimov, A. I., Kirienko, V. V., Armbrister, V. A. & Dvurechenskii, A. V., 1 Apr 2017, In: JETP Letters. 105, 7, p. 426-429 4 p.

    Research output: Contribution to journal › Article › peer-review

  10. Spin relaxation in Si nanoclusters embedded in free-standing SiGe nanocolumns

    Stepina, N. P., Zinovieva, A. F., Dvurechenskii, A. V., Noda, S., Molla, M. Z. & Samukawa, S., 15 May 2017, In: Applied Physics Letters. 110, 20, 4 p., 203103.

    Research output: Contribution to journal › Article › peer-review

  11. Fundamental characteristic length scale for the field dependence of hopping charge transport in disordered organic semiconductors

    Nenashev, A. V., Oelerich, J. O., Dvurechenskii, A. V., Gebhard, F. & Baranovskii, S. D., 21 Jul 2017, In: Physical Review B. 96, 3, 7 p., 035204.

    Research output: Contribution to journal › Article › peer-review

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