Enhancing the photoluminescence response of thick Ge-on-Si layers using photonic crystals

Yurasov, D., Yablonskiy, A. N., Baidakova, N. A., Shaleev, M., Rodyakina, E. E., Dyakov, S. A. & Novikov, A., 17 Feb 2022, In: Journal Physics D: Applied Physics. 55, 7, 8 p., 075107.

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Dependence of the Luminescence Properties of Ordered Groups of Ge(Si) Nanoislands on the Parameters of the Pit-Patterned Surface of a Silicon-on-Insulator Substrate

Smagina, Z. V., Zinovyev, V. A., Stepikhova, M. V., Peretokin, A. V., Dyakov, S. A., Rodyakina, E. E., Novikov, A. V. & Dvurechenskii, A. V., Feb 2022, In: Semiconductors. 56, 2, p. 101-106 6 p.

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Tuning the configuration of quantum dot molecules grown on stacked multilayers of heteroepitaxial islands

Rudin, S. A., Zinovyev, V. A., Smagina, Z. V., Novikov, P. L., Shklyaev, A. A. & Dvurechenskii, A. V., 21 Jan 2022, In: Journal of Applied Physics. 131, 3, 035302.

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Generating Function Method for Calculating the Potentials of Inhomogeneous Polyhedra

Nenashev, A. V., 20 Jan 2022, In: Frontiers in Physics. 9, 795693.

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Structural, optical and electronic properties of the wide bandgap topological insulator Bi_1.1Sb_0.9Te₂S

Khatchenko, Y. E., Yakushev, M. V., Seibel, C., Bentmann, H., Orlita, M., Golyashov, V., Ponosov, Y. S., Stepina, N. P., Mudriy, A. V., Kokh, K. A., Tereshchenko, O. E., Reinert, F., Martin, R. W. & Kuznetsova, T. V., 15 Jan 2022, In: Journal of Alloys and Compounds. 890, 161824.

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Modulation of the Dirac Point Band Gap in the Antiferromagnetic Topological Insulator MnBi₂Te₄ due to the Surface Potential Gradient Change

Shikin, A. M., Estyunin, D. A., Zaitsev, N. L., Glazkova, D. A., Klimovskikh, I. I., Fil’nov, S. O., Rybkin, A. G., Kokh, K. A., Tereshchenko, O. E., Zvezdin, K. A. & Zvezdin, A. K., Jan 2022, In: Journal of Experimental and Theoretical Physics. 134, 1, p. 103-111 9 p.

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Transport through the network of topological channels in HgTe based quantum well

Gusev, G. M., Kvon, Z. D., Kozlov, D. A., Olshanetsky, E. B., Entin, M. & Mikhailov, N. N., Jan 2022, In: 2D Materials. 9, 1, 8 p., 015021.

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Weak antilocalization to weak localization transition in Bi₂Se₃ films on graphene

Stepina, N. P., Golyashov, V. A., Nenashev, A. V., Tereshchenko, O. E., Kokh, K. A., Kirienko, V. V., Koptev, E. S., Goldyreva, E. S., Rybin, M. G., Obraztsova, E. D. & Antonova, I. V., Jan 2022, In: Physica E: Low-Dimensional Systems and Nanostructures. 135, 114969.

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Erratum to: Several Articles in JETP Letters (JETP Letters, (2022), 116, 2, (83-89), 10.1134/S0021364022601208)

Semenin, N. V., Borisenko, A. S., Zalivako, I. V., Semerikov, I. A., Aksenov, M. D., Khabarova, K. Y., Kolachevsky, N. N., Glazyrin, S. I., Lykov, V. A., Karpov, S. A., Karlykhanov, N. G., Gryaznykh, D. A., Bychenkov, V. Y., Karelina, L. N., Shuravin, N. S., Ionin, A. S., Bakurskiy, S. V., Egorov, S. V., Golovchanskiy, I. A., Chichkov, V. I., & 6 othersBol’ginov, V. V., Ryazanov, V. V., Kazantsev, D. M., Alperovich, V. L., Tkachenko, V. A. & Kvon, Z. D., 2022, In: JETP Letters. 116, 12, p. 912-913 2 p.

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