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  1. Origin of spin-polarized photocurrents in the topological surface states of Bi2Se3

    Ketterl, A. S., Otto, S., Bastian, M., Andres, B., Gahl, C., Minár, J., Ebert, H., Braun, J., Tereshchenko, O. E., Kokh, K. A., Fauster, T. & Weinelt, M., 8 Oct 2018, In: Physical Review B. 98, 15, 7 p., 155406.

    Research output: Contribution to journal › Article › peer-review

  2. Oxygen polyvacancies as conductive filament in zirconia: First principle simulation

    Perevalov, T. V. & Islamov, D. R., 1 Jan 2017, SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 15: IN MEMORY OF SAMARES KAR. Misra, D., DeGendt, S., Houssa, M., Kita, K. & Landheer, D. (eds.). 1 ed. Electrochemical Society, Inc., Vol. 80. p. 357-362 6 p. (ECS Transactions; vol. 80).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

  3. Oxygen polyvacancy in anatas as a filament: First principle investigation

    Perevalov, T. V. & Islamov, D. R., 15 Aug 2017, In: Journal of Physics: Conference Series. 864, 1, 4 p., 012084.

    Research output: Contribution to journal › Conference article › peer-review

  4. Oxygen vacancies in zirconium oxide as the blue luminescence centres and traps responsible for charge transport: Part I—Crystals

    Islamov, D. R., Gritsenko, V. A., Perevalov, T. V., Yelisseyev, A. P., Pustovarov, V. A., Korolkov, I. V. & Lomonova, E. E., Mar 2021, In: Materialia. 15, 100979.

    Research output: Contribution to journal › Article › peer-review

  5. Oxygen vacancies in zirconium oxide as the blue luminescence centres and traps responsible for charge transport: Part II—Films

    Islamov, D. R., Gritsenko, V. A., Perevalov, T. V., Aliev, V. S., Nadolinny, V. A. & Chin, A., Mar 2021, In: Materialia. 15, 100980.

    Research output: Contribution to journal › Article › peer-review

  6. Percolation description of charge transport in amorphous oxide semiconductors

    Nenashev, A. V., Oelerich, J. O., Greiner, S. H. M., Dvurechenskii, A. V., Gebhard, F. & Baranovskii, S. D., 12 Sept 2019, In: Physical Review B. 100, 12, 8 p., 125202.

    Research output: Contribution to journal › Article › peer-review

  7. Percolation Description of Charge Transport in Amorphous Oxide Semiconductors: Band Conduction Dominated by Disorder

    Nenashev, A. V., Gebhard, F., Meerholz, K. & Baranovskii, S. D., Aug 2022, Amorphous Oxide Semiconductors: A singular resource on amorphous oxide semiconductors edited by a world-recognized pioneer in the field. Hosono, H. & Kumomi, H. (eds.). Wiley-VCH Verlag, p. 125-144 20 p. (Amorphous Oxide Semiconductors).

    Research output: Chapter in Book/Report/Conference proceeding › Chapter › Research › peer-review

  8. Percolation description of charge transport in the random barrier model applied to amorphous oxide semiconductors

    Baranovskii, S. D., Nenashev, A. V., Oelerich, J. O., Greiner, S. H. M., Dvurechenskii, A. V. & Gebhard, F., 1 Sept 2019, In: EPL. 127, 5, 5 p., 57004.

    Research output: Contribution to journal › Article › peer-review

  9. Phonons in Core-Shell CdSe/CdS Nanoplatelets Studied by Vibrational Spectroscopies

    Kurus, N. N., Milekhin, A. G., Sklyar, R. I., Saidzhonov, B. M., Vasiliev, R. B., Adichtchev, S. V., Surovtsev, N. V., Latyshev, A. V. & Zahn, D. R. T., 28 Apr 2022, In: Journal of Physical Chemistry C. 126, 16, p. 7107-7116 10 p.

    Research output: Contribution to journal › Article › peer-review

  10. Photo- and Thermoelectric Phenomena in Two-Dimensional Topological Insulators and Semimetals Based on HgTe Quantum Wells (Scientific Summary)

    Kvon, Z. D., Savchenko, M. L., Kozlov, D. A., Olshanetsky, E. B., Yaroshevich, A. S. & Mikhailov, N. N., 1 Aug 2020, In: JETP Letters. 112, 3, p. 161-172 12 p.

    Research output: Contribution to journal › Article › peer-review

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