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  1. Charge transport mechanism in dielectrics: drift and diffusion of trapped charge carriers

    Pil’nik, A. A., Chernov, A. A. & Islamov, D. R., 1 Dec 2020, In: Scientific Reports. 10, 1, 10 p., 15759.

    Research output: Contribution to journal › Article › peer-review

  2. Charge transport mechanism in [GeOx](z)[SiO2](1-z) based MIS structures

    Yushkov, I. D., Gismatulin, A. A., Prosvirin, I. P., Kamaev, G. N., Marin, D. V., Vergnat, M. & Volodin, V. A., 9 Dec 2024, In: Applied Physics Letters. 125, 24, 242901.

    Research output: Contribution to journal › Article › peer-review

  3. Charge transport mechanism in La:HfO2

    Gritsenko, V. A. & Gismatulin, A. A., 5 Oct 2020, In: Applied Physics Letters. 117, 14, 4 p., 142901.

    Research output: Contribution to journal › Article › peer-review

  4. Charge transport mechanism in periodic mesoporous organosilica low- k dielectric

    Gismatulin, A. A., Gritsenko, V. A., Seregin, D. S., Vorotilov, K. A. & Baklanov, M. R., 19 Aug 2019, In: Applied Physics Letters. 115, 8, 5 p., 082904.

    Research output: Contribution to journal › Article › peer-review

  5. Charge transport mechanism in SiNx-based memristor

    Gismatulin, A. A., Gritsenko, V. A., Yen, T. J. & Chin, A., 16 Dec 2019, In: Applied Physics Letters. 115, 25, 5 p., 253502.

    Research output: Contribution to journal › Article › peer-review

  6. Charge Transport Mechanism in the Forming-Free Memristor Based on PECVD Silicon Oxynitride

    Gismatulin, A. A., Kamaev, G. N., Volodin, V. A. & Gritsenko, V. A., Feb 2023, In: Electronics (Switzerland). 12, 3, 598.

    Research output: Contribution to journal › Article › peer-review

  7. Charge transport mechanism in the forming-free memristor based on silicon nitride

    Gismatulin, A. A., Kamaev, G. N., Kruchinin, V. N., Gritsenko, V. A., Orlov, O. M. & Chin, A., 28 Jan 2021, In: Scientific Reports. 11, 1, 2417.

    Research output: Contribution to journal › Article › peer-review

  8. Charge transport mechanism in the metal-nitride-oxide-silicon forming-free memristor structure

    Gismatulin, A. A., Orlov, O. M., Gritsenko, V. A., Kruchinin, V. N., Mizginov, D. S. & Krasnikov, G. Y., 18 May 2020, In: Applied Physics Letters. 116, 20, 5 p., 203502.

    Research output: Contribution to journal › Article › peer-review

  9. Charge transport mechanism in the metal–nitride–oxide–silicon forming-free memristor structure

    Gismatulin, A. A., Orlov, O. M., Gritsenko, V. A. & Krasnikov, G. Y., Jan 2021, In: Chaos, Solitons and Fractals. 142, 110458.

    Research output: Contribution to journal › Article › peer-review

  10. Charge transport mechanism of high-resistive state in RRAM based on SiOx

    Gismatulin, A. A., Kruchinin, V. N., Gritsenko, V. A., Prosvirin, I. P., Yen, T. J. & Chin, A., 21 Jan 2019, In: Applied Physics Letters. 114, 3, 5 p., 033503.

    Research output: Contribution to journal › Article › peer-review

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