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  1. Charge transport mechanism in La:HfO2

    Gritsenko, V. A. & Gismatulin, A. A., 5 Oct 2020, In: Applied Physics Letters. 117, 14, 4 p., 142901.

    Research output: Contribution to journal › Article › peer-review

  2. Charge transport mechanism in periodic mesoporous organosilica low- k dielectric

    Gismatulin, A. A., Gritsenko, V. A., Seregin, D. S., Vorotilov, K. A. & Baklanov, M. R., 19 Aug 2019, In: Applied Physics Letters. 115, 8, 5 p., 082904.

    Research output: Contribution to journal › Article › peer-review

  3. Charge transport mechanism in SiNx-based memristor

    Gismatulin, A. A., Gritsenko, V. A., Yen, T. J. & Chin, A., 16 Dec 2019, In: Applied Physics Letters. 115, 25, 5 p., 253502.

    Research output: Contribution to journal › Article › peer-review

  4. Charge Transport Mechanism in the Forming-Free Memristor Based on PECVD Silicon Oxynitride

    Gismatulin, A. A., Kamaev, G. N., Volodin, V. A. & Gritsenko, V. A., Feb 2023, In: Electronics (Switzerland). 12, 3, 598.

    Research output: Contribution to journal › Article › peer-review

  5. Charge transport mechanism in the forming-free memristor based on silicon nitride

    Gismatulin, A. A., Kamaev, G. N., Kruchinin, V. N., Gritsenko, V. A., Orlov, O. M. & Chin, A., 28 Jan 2021, In: Scientific Reports. 11, 1, 2417.

    Research output: Contribution to journal › Article › peer-review

  6. Charge transport mechanism in the metal-nitride-oxide-silicon forming-free memristor structure

    Gismatulin, A. A., Orlov, O. M., Gritsenko, V. A., Kruchinin, V. N., Mizginov, D. S. & Krasnikov, G. Y., 18 May 2020, In: Applied Physics Letters. 116, 20, 5 p., 203502.

    Research output: Contribution to journal › Article › peer-review

  7. Charge transport mechanism in the metal–nitride–oxide–silicon forming-free memristor structure

    Gismatulin, A. A., Orlov, O. M., Gritsenko, V. A. & Krasnikov, G. Y., Jan 2021, In: Chaos, Solitons and Fractals. 142, 110458.

    Research output: Contribution to journal › Article › peer-review

  8. Charge transport mechanism of high-resistive state in RRAM based on SiOx

    Gismatulin, A. A., Kruchinin, V. N., Gritsenko, V. A., Prosvirin, I. P., Yen, T. J. & Chin, A., 21 Jan 2019, In: Applied Physics Letters. 114, 3, 5 p., 033503.

    Research output: Contribution to journal › Article › peer-review

  9. Charging of Geostationary Satellite Electro-L2 in the Earth Shadow

    Novikov, L. S., Makletsov, A. A., Sinolits, V. V., Chirskaya, N. P., Nikolsky, E. V., Pakostina, A. V., Bakutov, A. E., Prokopiev, Y. M. & Shilov, A. M., 1 Aug 2019, In: IEEE Transactions on Plasma Science. 47, 8, p. 3931-3936 6 p., 8731751.

    Research output: Contribution to journal › Article › peer-review

  10. Charm at KEDR

    KEDR Collaboration & Бару, С. Е., 10 Nov 2021, In: Proceedings of Science. 385, 008.

    Research output: Contribution to journal › Conference article › peer-review

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