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  1. Weak antilocalization to weak localization transition in Bi2Se3 films on graphene

    Stepina, N. P., Golyashov, V. A., Nenashev, A. V., Tereshchenko, O. E., Kokh, K. A., Kirienko, V. V., Koptev, E. S., Goldyreva, E. S., Rybin, M. G., Obraztsova, E. D. & Antonova, I. V., Jan 2022, In: Physica E: Low-Dimensional Systems and Nanostructures. 135, 114969.

    Research output: Contribution to journal › Article › peer-review

  2. Variational method of energy level calculation in pyramidal quantum dots

    Nenashev, A. V. & Dvurechenskii, A. V., 21 Apr 2020, In: Journal of Applied Physics. 127, 15, 8 p., 154301.

    Research output: Contribution to journal › Article › peer-review

  3. Tunneling current modulation in atomically precise graphene nanoribbon heterojunctions

    Senkovskiy, B. V., Nenashev, A. V., Alavi, S. K., Falke, Y., Hell, M., Bampoulis, P., Rybkovskiy, D. V., Usachov, D. Y., Fedorov, A. V., Chernov, A. I., Gebhard, F., Meerholz, K., Hertel, D., Arita, M., Okuda, T., Miyamoto, K., Shimada, K., Fischer, F. R., Michely, T., Baranovskii, S. D., & 3 othersLindfors, K., Szkopek, T. & Grüneis, A., 1 Dec 2021, In: Nature Communications. 12, 1, p. 2542 2542.

    Research output: Contribution to journal › Article › peer-review

  4. Self-Organization of Ge(Si) Nanoisland Groups on Pit-Patterned Si(100) Substrates

    Smagina, Z. V., Zinoviev, V. A., Rudin, S. A., Rodyakina, E. E., Novikov, P. L., Nenashev, A. V. & Dvurechenskii, A. V., Dec 2020, In: Semiconductors. 54, 14, p. 1866-1868 3 p.

    Research output: Contribution to journal › Article › peer-review

  5. Self-assembled epitaxial metal-semiconductor nanostructures with enhanced GeSi quantum dot luminescence

    Zinovyev, V. A., Zinovieva, A. F., Nenashev, A. V., Dvurechenskii, A. V., Katsuba, A. V., Borodavchenko, O. M., Zhivulko, V. D. & Mudryi, A. V., 28 Jun 2020, In: Journal of Applied Physics. 127, 24, 7 p., 243108.

    Research output: Contribution to journal › Article › peer-review

  6. Release of carriers from traps enhanced by hopping

    Nenashev, A. V., Valkovskii, V. V., Oelerich, J. O., Dvurechenskii, A. V., Semeniuk, O., Reznik, A., Gebhard, F. & Baranovskii, S. D., 30 Oct 2018, In: Physical Review B. 98, 15, 10 p., 155207.

    Research output: Contribution to journal › Article › peer-review

  7. Quantum states in disordered media. I. Low-pass filter approach

    Gebhard, F., Nenashev, A. V., Meerholz, K. & Baranovskii, S. D., 2023, In: Physical Review B. 107, 6, 17 p., 064206.

    Research output: Contribution to journal › Article › peer-review

  8. Quantum states in disordered media. II. Spatial charge carrier distribution

    Nenashev, A. V., Baranovskii, S. D., Meerholz, K. & Gebhard, F., 1 Feb 2023, In: Physical Review B. 107, 6, 23 p., 064207.

    Research output: Contribution to journal › Article › peer-review

  9. Quantum Gates with Spin States in Continuous Microwave Field

    Zinovieva, A. F., Nenashev, A. V., Koshkarev, A. A., Zarodnyuk, T. S., Gornov, A. Y. & Dvurechenskii, A. V., 1 Jul 2018, In: Russian Microelectronics. 47, 4, p. 268-278 11 p.

    Research output: Contribution to journal › Article › peer-review

  10. Photoluminescence of compact GeSi quantum dot groups with increased probability of finding an electron in Ge

    Zinovieva, A. F., Zinovyev, V. A., Nenashev, A. V., Teys, S. A., Dvurechenskii, A. V., Borodavchenko, O. M., Zhivulko, V. D. & Mudryi, A. V., 9 Jun 2020, In: Scientific Reports. 10, 1, 9 p., 9308.

    Research output: Contribution to journal › Article › peer-review

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